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1. 发明授权

US06791146B2 Silicon controlled rectifier structure with guard ring controlled circuit 有权
标题翻译：具有保护环控制电路的可控硅整流器结构
公开(公告)号：US06791146B2
公开(公告)日：2004-09-14
申请号：US10178235
申请日：2002-06-25
申请人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
发明人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
IPC分类号： H01L2362
CPC分类号： H01L27/0262 , H01L27/0817 , H01L29/7436
摘要： The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of guard ring of PMSCR. In normal operation, the switch is of low impedance such that the guard ring is short to anode and collects electrons to enhance the power-zapping immunity. Furthermore, during the ESD (electrostatic discharge) event, the switch is of high impedance such that the guard ring is non-functional. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV (high voltage) pad.
摘要翻译：本发明提供了具有保护环控制电路的PMSCR（具有第一导电类型的桥接修改的侧向修改的可控硅整流器）。本发明利用诸如开关的控制电路来控制PMSCR保护环的功能。在正常工作中，开关具有低阻抗，使得保护环与阳极短路并收集电子以提高功率跳跃抗扰度。此外，在ESD（静电放电）事件期间，开关具有高阻抗，使得保护环不起作用。因此，具有保护环控制电路的PMSCR可以在HV（高电压）焊盘的应用中增强ESD性能和功率切换抗扰性。

2. 发明授权

US06410963B1 Electrostatic discharge protection circuits with latch-up prevention function 有权
标题翻译：具有防闩锁功能的静电放电保护电路
公开(公告)号：US06410963B1
公开(公告)日：2002-06-25
申请号：US09977707
申请日：2001-10-16
申请人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
发明人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
IPC分类号： H01L2342
CPC分类号： H01L27/0251
摘要： An electrostatic discharge protection which is electrically coupled with an interface terminal and a devices area, at least include a first bipolar junction transistor, a second bipolar junction transistor, a first MOS transistor, and a second MOS transistor. Both bipolar junction transistors forms the well-known silicon controlled rectifier, first MOS transistor locates between interface terminal and second bipolar junction transistor and second MOS transistor locates between emitter of second bipolar junction transistor and ground point, and gates of both MOS transistor electrically coupled with voltage base point whose voltage is equal to work voltage of devices area. While devices area is turned off, silicon controlled rectifier would be latch-up and provides function of electrostatic discharge protection. While devices area is turned on, second MOS transistor also is turned on so that part of current flows into ground point but not flows into second bipolar junction transistor. Thus, positive feedback between two bipolar junction transistors is reduced and then latch-up is eliminated.
摘要翻译：与接口端子和器件区域电耦合的静电放电保护至少包括第一双极结型晶体管，第二双极结型晶体管，第一MOS晶体管和第二MOS晶体管。两个双极结型晶体管形成公知的可控硅整流器，第一MOS晶体管位于接口端子和第二双极结型晶体管之间，第二MOS晶体管位于第二双极结型晶体管的发射极和接地点之间，并且两个MOS晶体管的栅极电耦合电压基点电压等于设备面积的工作电压。当器件区域关闭时，可控硅整流器将被闩锁并提供静电放电保护功能。当器件区域导通时，第二MOS晶体管也导通，使得部分电流流入接地点，但不流入第二双极结型晶体管。因此，两个双极结晶体管之间的正反馈减小，然后消除闭锁。

3. 发明授权

US06919604B2 Silicon controlled rectifier structure with guard ring controlled circuit 有权
标题翻译：具有保护环控制电路的可控硅整流器结构
公开(公告)号：US06919604B2
公开(公告)日：2005-07-19
申请号：US10697092
申请日：2003-10-31
申请人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
发明人： Chen-Shang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
IPC分类号： H01L27/02 , H01L27/08 , H01L29/74 , H01L23/62
CPC分类号： H01L27/0262 , H01L27/0817 , H01L29/7436
摘要： The present invention provides a PMSCR (bridging modified lateral modified silicon controlled rectifier having first conductivity type) with a guard ring controlled circuit. The present invention utilizes controlled circuit such as switch to control functionally of guard ring of PMSCR. In normal operation, the switch is of low impedance such that the guard ring is short to anode and collects electrons to enhance the power-zapping immunity. Furthermore, during the ESD (electrostatic discharge) event, the switch is of high impedance such that the guard ring is non-functional. Thus, the PMSCR with guard ring control circuit can enhance both the ESD performance and the power-zapping immunity in the application of the HV (high voltage) pad.
摘要翻译：本发明提供了具有保护环控制电路的PMSCR（具有第一导电类型的桥接修改的侧向修改的可控硅整流器）。本发明利用诸如开关的控制电路来控制PMSCR保护环的功能。在正常工作中，开关具有低阻抗，使得保护环与阳极短路并收集电子以提高功率跳跃抗扰度。此外，在ESD（静电放电）事件期间，开关具有高阻抗，使得保护环不起作用。因此，具有保护环控制电路的PMSCR可以在HV（高电压）焊盘的应用中增强ESD性能和功率切换抗扰性。

4. 发明授权

US06628488B2 Electrostatic discharge protection circuit 有权
公开(公告)号：US06628488B2
公开(公告)日：2003-09-30
申请号：US09874339
申请日：2001-06-06
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
IPC分类号： H02H900
CPC分类号： H01L27/0292 , H01L27/0251
摘要： An electrostatic discharge (ESD) protection circuit is disclosed. This invention relates an electrostatic discharge protection circuit for multi-power and mixed-voltage integrated circuit. In the electrostatic discharge protection circuit of the invention, an ESD protection cell formed with voltage selector, control circuit and transistor is used to connect with a independent power and ESD bus is used to connect with each ESD protection cell so that each power is isolated from each other during normal operation. Therefore, each power can be operated independently and circuit will be prevented from ESD during ESD discharging.

5. 发明授权

US06947267B2 RC controlled ESD circuits for mixed-voltage interface 有权
标题翻译： RC控制ESD电路用于混合电压接口
公开(公告)号：US06947267B2
公开(公告)日：2005-09-20
申请号：US09853591
申请日：2001-05-14
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
IPC分类号： H01L27/02 , H02H3/22
CPC分类号： H01L27/0292 , H01L27/0285
摘要： The present invention relates an electrostatic discharge (ESD) protection device that is applied to a mixed voltage circuit assembly. The device comprises a RC controlled circuit subassembly and a field transistor, which the RC controlled circuit is coupled with the mixed voltage circuit assembly to substantially control the ESD protection device to be ON or OFF. The field transistor is coupled between a first power supply and a second power supply of said mixed voltage circuit assembly, which is off on the condition of a normal operating condition and is conducting as an ESD event occurred.
摘要翻译：本发明涉及一种应用于混合电压电路组件的静电放电（ESD）保护装置。该装置包括RC控制电路子组件和场晶体管，RC控制电路与混合电压电路组件耦合，以基本上控制ESD保护装置的导通或截止。场晶体管耦合在所述混合电压电路组件的第一电源和第二电源之间，所述第二电源在正常工作条件下处于关断状态，并且当ESD事件发生时导通。

6. 发明授权

US06933540B2 ESD protection apparatus and method for dual-polarity input pad 有权
标题翻译：用于双极性输入板的ESD保护装置和方法
公开(公告)号：US06933540B2
公开(公告)日：2005-08-23
申请号：US10606922
申请日：2003-06-27
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Tao-Cheng Lu
IPC分类号： H01L27/02 , H01L29/72
CPC分类号： H01L27/0262 , H01L29/87
摘要： An ESD protection apparatus for dual-polarity input pad comprises a triple-well formed with a first, second and third regions to form an SCR structure. A first and second ground connection regions of opposite conductivity types are formed on the first region, a first and second input connection regions of opposite conductivity types are formed in the third region, and a bridge region is formed across the second region and extends to the first and third regions. Under normal operation, the first, second, and third regions form two back-to-back diodes. Under positive polarity ESD event, breakdown is occurred between the bridge and first regions to thereby trigger an SCR circuit for positive polarity ESD protection. Under negative polarity ESD event, breakdown is occurred between the bridge and third regions to thereby trigger an SCR circuit for negative polarity ESD protection.
摘要翻译：用于双极性输入焊盘的ESD保护装置包括形成有第一，第二和第三区域以形成SCR结构的三阱。在第一区域上形成有相反导电类型的第一和第二接地连接区域，在第三区域中形成相反导电类型的第一和第二输入连接区域，跨越第二区域形成桥接区域并延伸到第一和第三区域。在正常操作下，第一，第二和第三区域形成两个背对背二极管。在正极性ESD事件下，在桥与第一区之间发生击穿，从而触发用于正极性ESD保护的SCR电路。在负极性ESD事件下，桥和第三区之间发生击穿，从而触发用于负极性ESD保护的SCR电路。

7. 发明授权

US07193274B2 ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad 有权
标题翻译： ESD保护结构和方法利用高耐压焊盘的基板触发
公开(公告)号：US07193274B2
公开(公告)日：2007-03-20
申请号：US10854792
申请日：2004-05-27
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
IPC分类号： H01L29/72
CPC分类号： H01L27/0266
摘要： In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.
摘要翻译：在ESD保护结构和方法中，利用衬底触发用于衬底上的高耐压焊盘，ESD保护器件具有连接到焊盘的源极和连接到地的栅极和漏极，以及衬底触发控制电路用于在正常操作期间将衬底保持在低电压，并且在ESD事件期间将衬底泵送到高电压以使ESD保护器件被触发得更容易。基板触发控制电路由有源器件实现，从而减小电路的芯片尺寸和对焊盘的负载效应。

8. 发明申请

US20060273399A1 ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad 有权
公开(公告)号：US20060273399A1
公开(公告)日：2006-12-07
申请号：US11496490
申请日：2006-08-01
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
IPC分类号： H01L23/62
CPC分类号： H01L27/0266
摘要： In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.

9. 发明授权

US06661273B1 Substrate pump circuit and method for I/O ESD protection 有权
标题翻译：基板泵电路和I / O ESD保护方法
公开(公告)号：US06661273B1
公开(公告)日：2003-12-09
申请号：US10225160
申请日：2002-08-22
申请人： Chun-Hsiang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
发明人： Chun-Hsiang Lai , Meng-Huang Liu , Shin Su , Tao-Cheng Lu
IPC分类号： H03K508
CPC分类号： H01L27/0277 , H03K5/08
摘要： A substrate pump circuit and method for I/O ESD protection including NMOS fingers connected to the interconnection between an I/O pad and an internal circuit comprises a MOS device connected to the interconnection between the I/O pad and the internal circuit and the substrate under the control of a switch to turn it on to conduct a pumping current through the substrate resistor when the I/O pad is under ESD stress, so as to pull up the potential of the substrate adjacent to the NMOS fingers, resulting in the reduction of the triggering voltage of the NMOS fingers.
摘要翻译：用于I / O ESD保护的衬底泵电路和方法，包括连接到I / O焊盘和内部电路之间的互连的NMOS指状包括连接到I / O焊盘和内部电路与衬底之间的互连的MOS器件在I / O焊盘处于ESD应力下时，在开关控制下将其导通以通过衬底电阻器进行泵浦电流，从而上升与NMOS指状物相邻的衬底的电位，从而减少的NMOS手指的触发电压。

10. 发明申请

US20050047036A1 ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad 有权
标题翻译： ESD保护结构和方法利用高耐压焊盘的基板触发
公开(公告)号：US20050047036A1
公开(公告)日：2005-03-03
申请号：US10854792
申请日：2004-05-27
申请人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
发明人： Meng-Huang Liu , Chun-Hsiang Lai , Shin Su , Yen-Hung Yeh , Chia-Ling Lu , Tao-Cheng Lu
IPC分类号： H01L23/60 , H01L27/02 , H02H9/00
CPC分类号： H01L27/0266
摘要： In an ESD protection structure and method utilizing substrate triggering for a high-voltage tolerant pad on a substrate, an ESD protection device has a source connected to the pad and a gate and a drain both connected to a ground, and a substrate-triggering control circuit is used to keep the substrate at a low voltage during a normal operation, and pumping the substrate to a high voltage during an ESD event for the ESD protection device to be triggered much easier. The substrate-triggering control circuit is implemented with an active device, thereby reducing the chip size for the circuit and the loading effect on the pad.
摘要翻译：在ESD保护结构和方法中，利用衬底触发用于衬底上的高耐压焊盘，ESD保护器件具有连接到焊盘的源极和连接到地的栅极和漏极，以及衬底触发控制电路用于在正常操作期间将衬底保持在低电压，并且在ESD事件期间将衬底泵送到高电压以使ESD保护器件被触发得更容易。基板触发控制电路由有源器件实现，从而减小电路的芯片尺寸和对焊盘的负载效应。

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