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1. 发明授权

US06372632B1 Method to eliminate dishing of copper interconnects by the use of a sacrificial oxide layer 有权
标题翻译：通过使用牺牲氧化物层来消除铜互连的凹陷的方法
公开(公告)号：US06372632B1
公开(公告)日：2002-04-16
申请号：US09490138
申请日：2000-01-24
申请人： Chen-Hua Yu , Weng Chang , Jih-Chung Twu , Tsu Shih
发明人： Chen-Hua Yu , Weng Chang , Jih-Chung Twu , Tsu Shih
IPC分类号： H01L214763
CPC分类号： H01L21/7688 , H01L21/31053 , H01L21/3212 , H01L21/7684
摘要： A method of forming a planarized metal interconnect comprising the following steps. A semiconductor structure is provided. A low K dielectric layer is formed over the semiconductor structure. A sacrificial layer over is formed over the low K dielectric layer. The sacrificial layer and low K dielectric layer are patterned to form a trench within the sacrificial layer and low K dielectric layer. A barrier layer is formed over the sacrificial layer, lining the trench side walls and bottom. Metal is deposited on the barrier layer to form a metal layer filling the lined trench and blanket filling the sacrificial layer covered low K dielectric layer. The metal layer and the barrier layer are planarized, exposing the upper surface of the sacrificial layer. The sacrificial layer is removed to form a planarized metal interconnect.
摘要翻译：一种形成平面化金属互连的方法，包括以下步骤。提供半导体结构。在半导体结构上形成低K电介质层。在低K电介质层上形成牺牲层。将牺牲层和低K电介质层图案化以在牺牲层和低K电介质层内形成沟槽。在牺牲层上形成阻挡层，衬在沟槽侧壁和底部。金属沉积在阻挡层上以形成填充衬里沟槽的金属层，并覆盖填充覆盖低K电介质层的牺牲层。金属层和阻挡层被平坦化，暴露牺牲层的上表面。去除牺牲层以形成平坦化的金属互连。

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