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1. 发明申请

US20050205808A1 ION IMPLANTER AND METHOD OF PREVENTING UNDESIRABLE IONS FROM IMPLANTING A TARGET WAFER 失效
标题翻译：离子植入物和防止不可渗透的离子植入目标波长的方法
公开(公告)号：US20050205808A1
公开(公告)日：2005-09-22
申请号：US10804890
申请日：2004-03-18
申请人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
发明人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
IPC分类号： H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/302 , H01J37/3171
摘要： An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
摘要翻译：提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。

2. 发明授权

US07023003B2 Ion implanter and method of preventing undesirable ions from implanting a target wafer 失效
标题翻译：离子注入机和防止不需要的离子注入目标晶片的方法
公开(公告)号：US07023003B2
公开(公告)日：2006-04-04
申请号：US10804890
申请日：2004-03-18
申请人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
发明人： Chen-Chung Li , Jui-Chun Weng , Chi-Chieh Wang , Tai-Kun Kao
IPC分类号： H01J37/00 , H01J37/08 , H01J37/20
CPC分类号： H01J37/302 , H01J37/3171
摘要： An ion implanter is provided having an ion source; an AMU analyzing magnet having a fixed radius Ram; an ion extraction voltage source; a communication interface for monitoring implantation parameters; and an equipment server having a data log. The ion implanter further has an arithmetic processor capable of determining a real-time estimated radius Re of a circular path of ions being implanted into a target wafer. A method of using the ion implanter provide an interlock on an AMU of each of a plurality of ions being implanted into the target wafer. The method has the step of determining in real-time if an ion implanter is implanting a desired ion into a target wafer. Also, the method determines if an absolute value of an offset between the Ram and Re exceeds a predetermined radius tolerance level L and adjusts the implanter accordingly if L is exceeded.
摘要翻译：提供具有离子源的离子注入机; 具有固定半径R am的AMU分析磁体; 离子提取电压源; 用于监测植入参数的通信接口; 以及具有数据日志的设备服务器。离子注入机还具有算术处理器，该算术处理器能够确定注入目标晶片的离子的圆形路径的实时估计半径R e E。使用离子注入机的方法在被注入到目标晶片中的多个离子中的每一个的AMU上提供互锁。该方法具有实时确定离子注入机是否将期望的离子注入目标晶片的步骤。此外，该方法确定R＆gt; am和＆lt;＆gt;＆lt; / SUB之间的偏移的绝对值是否超过预定的半径公差等级L，并且如果超过L则相应地调整注入机。

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