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1. 发明授权

US07672081B2 Perpendicular magnetic recording head 失效
标题翻译：垂直磁记录头
公开(公告)号：US07672081B2
公开(公告)日：2010-03-02
申请号：US11503296
申请日：2006-08-14
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11B5/127
CPC分类号： G11B5/012 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B2005/0029
摘要： A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.
摘要翻译：垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

2. 发明授权

US07652906B2 Memory device employing magnetic domain wall movement 有权
标题翻译：采用磁畴壁运动的记忆装置
公开(公告)号：US07652906B2
公开(公告)日：2010-01-26
申请号：US11851049
申请日：2007-09-06
申请人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
发明人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
IPC分类号： G11C19/00
CPC分类号： G11C11/14 , G11C19/0808 , G11C19/0816 , G11C19/0841 , Y10S977/933
摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a first track, an interconnecting layer, and a second track. The first track including a magnetic material is formed in a first direction. The interconnecting layer is formed on the first track. The second track including a magnetic material is formed in a second direction on the interconnecting layer.
摘要翻译：提供了采用磁畴壁运动的存储器件。存储器件包括第一轨道，互连层和第二轨道。包括磁性材料的第一轨迹形成在第一方向上。互连层形成在第一轨道上。包括磁性材料的第二轨道在互连层上沿第二方向形成。

3. 发明授权

US07684236B2 Semiconductor device using magnetic domain wall movement 有权
标题翻译：半导体器件采用磁畴壁运动
公开(公告)号：US07684236B2
公开(公告)日：2010-03-23
申请号：US11714823
申请日：2007-03-07
申请人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
发明人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
IPC分类号： G11C11/14
CPC分类号： G11B5/732 , G11B5/65 , G11B5/72 , G11C19/0808 , H01F10/14 , H01F10/16 , Y10S977/933 , Y10T428/31504 , Y10T428/31678
摘要： A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.
摘要翻译：提供了应用磁畴壁运动的半导体器件。半导体器件包括磁畴壁移动的磁性物质膜，磁性物质膜的阻尼常数为0.015〜0.1。

4. 发明申请

US20080014424A1 Semiconductor device using magnetic domain wall movement 有权
标题翻译：半导体器件采用磁畴壁运动
公开(公告)号：US20080014424A1
公开(公告)日：2008-01-17
申请号：US11714823
申请日：2007-03-07
申请人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
发明人： Chee-kheng Lim , Eun-sik Kim , Sung-chul Lee
IPC分类号： B32B15/04 , B32B9/04
CPC分类号： G11B5/732 , G11B5/65 , G11B5/72 , G11C19/0808 , H01F10/14 , H01F10/16 , Y10S977/933 , Y10T428/31504 , Y10T428/31678
摘要： A semiconductor device to which magnetic domain wall movement is applied is provided. The semiconductor device includes a magnetic substance film in which magnetic domain walls are moved, and the magnetic substance film has a damping constant of 0.015 to 0.1.
摘要翻译：提供了应用磁畴壁运动的半导体器件。半导体器件包括磁畴壁移动的磁性物质膜，磁性物质膜的阻尼常数为0.015〜0.1。

5. 发明申请

US20070025018A1 Perpendicular magnetic recording head comprising gap shield 失效
标题翻译：垂直磁记录头包括间隙屏蔽
公开(公告)号：US20070025018A1
公开(公告)日：2007-02-01
申请号：US11493585
申请日：2006-07-27
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim , Young-hun Im
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim , Young-hun Im
IPC分类号： G11B5/127
CPC分类号： G11B5/3116 , G11B5/11 , G11B5/1278 , G11B5/3146 , G11B5/315
摘要： A perpendicular magnetic recording head includes: a main pole; a return pole spaced a predetermined gap from the main pole; an induction coil inducing a magnetic field on the main pole; and two or more gap shields, wherein the two or more gap shields are formed in the gap between the main pole and the return pole.
摘要翻译：垂直磁记录头包括：主极; 与主极间隔开预定间隙的返回极; 感应线圈，在主极上引起磁场; 和两个或更多个间隙屏蔽，其中两个或更多个间隙屏蔽形成在主极和返回极之间的间隙中。

6. 发明申请

US20070035884A1 Perpendicular magnetic recording head 失效
标题翻译：垂直磁记录头
公开(公告)号：US20070035884A1
公开(公告)日：2007-02-15
申请号：US11503296
申请日：2006-08-14
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11B5/33
CPC分类号： G11B5/012 , G11B5/1278 , G11B5/3116 , G11B5/3146 , G11B2005/0029
摘要： A perpendicular magnetic recording head which moves in a track direction of a recording layer of a perpendicular magnetic recording medium to write information on the recording layer or read information from the recording layer. The perpendicular magnetic recording head includes: the perpendicular magnetic recording medium including a soft magnetic underlayer and the recording layer; a write head including a main pole that applies a magnetic field to, and writes information to, the recording layer and a return pole having a first end which is connected to the main pole and having a second end which is spaced apart from the main pole over an air bearing surface (ABS) of the perpendicular magnetic recording head which is adjacent to the recording layer; and a permanent magnet formed on at least one side of the write head.
摘要翻译：垂直磁记录头，其在垂直磁记录介质的记录层的轨道方向上移动以在记录层上写入信息或从记录层读取信息。垂直磁记录头包括：包括软磁性底层和记录层的垂直磁记录介质; 写头，其包括向记录层施加磁场并向其写入信息的主极;以及返回极，其具有连接到主极的第一端，并且具有与主极间隔开的第二端在与记录层相邻的垂直磁记录头的空气轴承表面（ABS）上; 以及形成在所述写入头的至少一侧上的永磁体。

7. 发明授权

US08115238B2 Memory device employing magnetic domain wall movement 有权
标题翻译：采用磁畴壁运动的记忆装置
公开(公告)号：US08115238B2
公开(公告)日：2012-02-14
申请号：US11850988
申请日：2007-09-06
申请人： Chee-kheng Lim , Eun-sik Kim , In-jun Hwang
发明人： Chee-kheng Lim , Eun-sik Kim , In-jun Hwang
IPC分类号： H01L27/148
CPC分类号： G11C11/15 , G11C19/0808
摘要： Provided is a memory device employing magnetic domain wall movement. The memory device includes a writing track and a column structure. The writing track forms magnetic domains that have predetermined magnetization directions. The column structure is formed on the writing track and includes at least one interconnecting layer and at least one storage track.
摘要翻译：提供了采用磁畴壁运动的存储器件。存储器件包括写入轨道和列结构。写入轨迹形成具有预定磁化方向的磁畴。列结构形成在写入轨道上，并且包括至少一个互连层和至少一个存储轨道。

8. 发明授权

US07902579B2 Magnetic memory devices using magnetic domain dragging 有权
标题翻译：使用磁畴拖曳的磁存储器件
公开(公告)号：US07902579B2
公开(公告)日：2011-03-08
申请号：US11505969
申请日：2006-08-18
申请人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： G11C11/02
CPC分类号： G11C11/15 , G11C11/5607 , G11C19/0808 , H01L27/228
摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.
摘要翻译：磁存储器件包括存储区域，输入端和传感器。存储区包括自由层，钉扎层和非磁性层。自由层具有相邻扇区和磁畴壁。被钉扎层对应于扇区并且具有固定的磁化方向。非磁性层形成在自由层和被钉扎层之间。存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。传感器测量流过存储器区域的电流。

9. 发明授权

US07751224B2 Data writing and reading method for memory device employing magnetic domain wall movement 失效
标题翻译：采用磁畴壁运动的存储器件的数据写入和读取方法
公开(公告)号：US07751224B2
公开(公告)日：2010-07-06
申请号：US11750376
申请日：2007-05-18
申请人： Chee-kheng Lim , Eun-sik Kim
发明人： Chee-kheng Lim , Eun-sik Kim
IPC分类号： G11C19/00
CPC分类号： G11C19/0808 , B82Y25/00 , G11C11/14 , H01F10/14 , H01F10/16 , H01F10/3222 , Y10S977/933
摘要： A method of data recording and reading for a memory device employing magnetic domain wall movement. The memory device includes a writing track, an interconnecting layer formed on the writing track, and a recording track formed on the interconnecting layer.
摘要翻译：一种采用磁畴壁运动的存储器件的数据记录和读取方法。存储器件包括写入磁道，形成在写入磁道上的互连层，以及形成在互连层上的记录磁道。

10. 发明申请

US20070194359A1 Magnetic memory devices using magnetic domain dragging 有权
标题翻译：使用磁畴拖曳的磁存储器件
公开(公告)号：US20070194359A1
公开(公告)日：2007-08-23
申请号：US11505969
申请日：2006-08-18
申请人： Chee-Kheng Lim , Eun-sik Kim , Yong-su Kim
发明人： Chee-Kheng Lim , Eun-sik Kim , Yong-su Kim
IPC分类号： H01L29/94
CPC分类号： G11C11/15 , G11C11/5607 , G11C19/0808 , H01L27/228
摘要： A magnetic memory device includes a memory region, an input and a sensor. The memory region includes a free layer, a pinned layer and a non-magnetic layer. The free layer has adjacent sectors and a magnetic domain wall. The pinned layer corresponds to the sectors and has a fixed magnetization direction. The non-magnetic layer is formed between the free layer and the pinned layer. The memory region includes a magnetic domain wall stopper for stopping the magnetic domain wall formed at each boundary of the sectors. The input is electrically connected to one end of the free layer for inputting a signal for magnetic domain dragging. The sensor measures a current flowing through the memory region.
摘要翻译：磁存储器件包括存储区域，输入端和传感器。存储区包括自由层，钉扎层和非磁性层。自由层具有相邻扇区和磁畴壁。被钉扎层对应于扇区并且具有固定的磁化方向。非磁性层形成在自由层和被钉扎层之间。存储区域包括用于停止形成在扇区的每个边界处的磁畴壁的磁畴壁塞。输入电连接到自由层的一端，用于输入用于磁畴拖动的信号。传感器测量流过存储器区域的电流。

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