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1. 发明授权

US4997608A Molding polytetrafluoroethylene 失效
标题翻译：成型聚四氟乙烯
公开(公告)号：US4997608A
公开(公告)日：1991-03-05
申请号：US418140
申请日：1989-10-06
申请人： Charles W. Haldeman , Adam A. Brailove
发明人： Charles W. Haldeman , Adam A. Brailove
IPC分类号： B29C43/14 , B30B11/00
CPC分类号： B30B11/007 , B29C43/14 , B29K2027/18 , B29K2105/251 , B29K2307/00 , B29K2995/0054
摘要： A process for producing a workpiece by compacting powder material, includes the steps of applying compression to the material along selected preferably orthogonal axes in compression steps, each compression step causing a volume reduction selected to produce the desired final compaction and orientation of material in the workpiece for that axis.
摘要翻译：用于通过压实粉末材料制造工件的方法包括以下步骤：沿压缩步骤沿选定的优选正交轴向材料施加压缩，每个压缩步骤引起选择的体积减小以产生所需工件中所需的最终压实和取向对于该轴。

2. 发明授权

US5793050A Ion implantation system for implanting workpieces 失效
公开(公告)号：US5793050A
公开(公告)日：1998-08-11
申请号：US756133
申请日：1996-11-26
申请人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
发明人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.

3. 发明授权

US5751003A Loadlock assembly for an ion implantation system 失效
标题翻译：用于离子注入系统的负载锁组件
公开(公告)号：US5751003A
公开(公告)日：1998-05-12
申请号：US779901
申请日：1997-01-07
申请人： Peter H. Rose , Adam A. Brailove
发明人： Peter H. Rose , Adam A. Brailove
IPC分类号： C23C14/48 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/20 , H01J37/30 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/3171 , H01L21/67069 , H01L21/67201 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： The present invention provides a loadlock assembly for a high throughput ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The loadlock assembly increases the throughput of the implantation system by continuously cycling workpieces through the process chamber, thus increasing the system's throughput. The loadlock assembly includes a plurality of loadlock stacking elements that are axially positioned relative to each other to form a stacked array of loadlocks. Additionally, the loadlocks of the array are configured to nest with an adjacent loadlock to form a stackable and nestable loadlock assembly.
摘要翻译：本发明提供一种用于高通量离子注入系统的负载锁组件，其快速且有效地处理诸如平板显示器之类的大量工件。负载锁定组件通过连续地将工件循环通过处理室来增加植入系统的吞吐量，从而增加系统的生产量。负载锁组件包括多个负载锁定堆叠元件，其相对于彼此轴向定位，以形成堆叠的负荷锁定阵列。此外，阵列的负载锁被配置为与相邻的负载锁定嵌套以形成可堆叠和可嵌套的负载锁组件。

4. 发明授权

US06294862B1 Multi-cusp ion source 失效
标题翻译：多尖叶离子源
公开(公告)号：US06294862B1
公开(公告)日：2001-09-25
申请号：US09081545
申请日：1998-05-19
申请人： Adam A. Brailove , Matthew Charles Gwinn
发明人： Adam A. Brailove , Matthew Charles Gwinn
IPC分类号： H01J2702
CPC分类号： H01J27/18
摘要： An ion source (26) includes a plasma confinement chamber and a plasma electrode (70) forming a generally planar wall section of the plasma confinement chamber. The plasma electrode (70) has at least one opening (84, 86) for allowing an ion beam (88) to exit the confinement chamber and has a set of magnets (78, 80, 82) that generate a magnetic field extending across the openings (84, 86) in the plasma electrode (70). The openings (84, 86) in the plasma electrode (70) can be fashioned as elongated slots or circular openings aligned along the axis. The ion source (26) can further include a power supply (72) for negatively biasing the plasma electrode relative to the plasma confinement chamber and an insulator (74) for electrically insulating the plasma electrode (70). Cooling tubes can also be provided to transfer heat away from the magnets in the plasma electrode (70).
摘要翻译：离子源（26）包括等离子体限制室和等离子体电极（70），其形成等离子体约束室的大致平面的壁部分。等离子体电极（70）具有用于允许离子束（88）离开限制室的至少一个开口（84,86），并具有一组磁体（78,80,82），该磁体产生一个磁场等离子体电极（70）中的开口（84,86）。等离子体电极（70）中的开口（84,86）可以被形成为沿轴线对齐的细长槽或圆形开口。离子源（26）还可以包括用于相对于等离子体限制室负偏置等离子体电极的电源（72）和用于电绝缘等离子体电极（70）的绝缘体（74）。还可以提供冷却管以将热量从等离子体电极（70）中的磁体传出。

5. 发明授权

US5828070A System and method for cooling workpieces processed by an ion implantation system 失效
标题翻译：用于冷却由离子注入系统处理的工件的系统和方法
公开(公告)号：US5828070A
公开(公告)日：1998-10-27
申请号：US756972
申请日：1996-11-26
申请人： Adam A. Brailove , Peter H. Rose , Julian G. Blake , Zhongmin Yang , Kenneth H. Purser
发明人： Adam A. Brailove , Peter H. Rose , Julian G. Blake , Zhongmin Yang , Kenneth H. Purser
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683 , G01N21/00 , G21K5/10
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A system and method for conductively and/or convectively transferring heat away from a workpiece that has been processed by a processing system, such as an ion implantation system. The conductive transfer of heat from the workpiece is effectuated by disposing the workpiece in relatively close proximity with a floor of a loadlock, which is maintained at a relatively cool temperature. The chamber pressure is disposed at a selected pressure by a pressure regulator and a vacuum pressure is applied to the backside of the workpiece closest to draw the workpiece into contact with the chamber floor, thereby effecting heat transfer from the workpiece to the cooling surface.
摘要翻译：一种用于导电地和/或对流地将热量从已经由处理系统例如离子注入系统处理的工件传送的系统和方法。通过将工件放置在相对靠近装载锁的地板并保持在相对较冷的温度下，来实现来自工件的导热传递。腔室压力通过压力调节器设置在选定的压力下，并且真空压力施加到最接近工件的工件的背面，以使工件与室底板接触，从而实现从工件到冷却表面的热传递。

6. 发明授权

US5825038A Large area uniform ion beam formation 失效
标题翻译：大面积均匀的离子束形成
公开(公告)号：US5825038A
公开(公告)日：1998-10-20
申请号：US756656
申请日：1996-11-26
申请人： Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
发明人： Julian G. Blake , Kenneth H. Purser , Adam A. Brailove , Peter H. Rose , Barbara J. Hughey
IPC分类号： H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/3007 , H01J2237/083
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion chamber generating a stream of ions, a plasma electrode having an elongated slot with a high aspect ratio for shaping the stream of ions into a ribbon beam, and an electrode assembly for directing the stream of ions towards a workpiece. The plasma electrode can include a split extraction system having a plurality of elongated slots oriented substantially parallel to each other. The ion implantation system can also have a diffusing system for homogenizing the ion stream. Various exemplary diffusing systems include an apertured plate having an array of openings, diffusing magnets, diffusing electrodes, and dithering magnets.
摘要翻译：快速有效地处理大量平板显示器的高通量离子注入系统。离子注入系统具有产生离子流的离子室，具有用于将离子流成形为带状束的高纵横比的细长槽的等离子体电极，以及用于将离子流引向工件的电极组件。等离子体电极可以包括具有基本上彼此平行取向的多个细长狭缝的分离提取系统。离子注入系统还可以具有用于使离子流均匀化的扩散系统。各种示例性扩散系统包括具有开口阵列，扩散磁体，扩散电极和抖动磁体的有孔板。

7. 发明授权

US6016036A Magnetic filter for ion source 失效
标题翻译：用于离子源的磁性过滤器
公开(公告)号：US6016036A
公开(公告)日：2000-01-18
申请号：US014472
申请日：1998-01-28
申请人： Adam A. Brailove
发明人： Adam A. Brailove
IPC分类号： H01J27/02 , C23C14/48 , H01J27/04 , H01J37/08 , H01J37/317 , H01J49/48 , H01L21/265 , H05H1/10
CPC分类号： H01J27/04 , H01J27/024 , H01J49/48
摘要： A magnetic filter (90) for an ion source (26) is provided. The ion source comprises a housing defining a plasma confinement chamber (76) in which a plasma including ions is generated by ionizing a source material. The housing includes a generally planar wall (50) in which are formed a plurality of elongated apertures (64) through which an ion beam (84) may be extracted from the plasma. The plurality of elongated openings are oriented substantially parallel to each other and to a first axis (66) which lies within the planar wall the first axis being substantially orthogonal to a second axis (68) which also lies within the planar wall. The magnetic filter (90) is disposed within the plasma confinement chamber (76). The magnetic filter separates the plasma confinement chamber into a primary region (86) and a secondary region (88). The magnetic filter comprises a plurality of parallel elongated magnets (90a-90n), oriented at an angle .theta. as measured from the second axis (68), and lying in a plane which is generally parallel to the generally planar wall (50).
摘要翻译：提供了一种用于离子源（26）的磁性过滤器（90）。离子源包括限定等离子体限制室（76）的壳体，其中通过电离源材料产生包括离子的等离子体。壳体包括大致平坦的壁（50），其中形成有多个细长的孔（64），离子束（84）可以从该等离子体中提取出。多个细长开口基本上彼此平行地定向并且位于平面壁内的第一轴线（66），第一轴线基本上正交于也位于平面壁内的第二轴线（68）。磁性过滤器（90）设置在等离子体限制室（76）内。磁性过滤器将等离子体约束室分离成主要区域（86）和次要区域（88）。磁性过滤器包括多个平行细长的磁体（90a-90n），其以从第二轴线（68）测量的角度θ定向，并且位于大致平行于大致平坦的壁（50）的平面中。

8. 发明授权

US5811823A Control mechanisms for dosimetry control in ion implantation systems 失效
标题翻译：离子注入系统中剂量测定控制的控制机制
公开(公告)号：US5811823A
公开(公告)日：1998-09-22
申请号：US757726
申请日：1996-11-26
申请人： Julian G. Blake , Piero Sferlazzo , Peter H. Rose , Adam A. Brailove
发明人： Julian G. Blake , Piero Sferlazzo , Peter H. Rose , Adam A. Brailove
IPC分类号： H01J37/04 , C23C14/48 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/265 , H01L21/677 , H01L21/683
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67739 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
摘要翻译：快速有效地处理大量平板显示器的高通量离子注入系统。离子注入系统具有离子源，电极组件，安装工件的平台和离子束测量结构。与电极组件结合的离子源形成带状束形状的离子束。离子束的形成和定向使得离子束的第一部分处理工件，而离子束的第二部分由束测量结构同时测量。控制器从离子束参数获取束测量结构的数据，然后根据数据产生离子注入系统的控制信号。

9. 发明授权

US6060718A Ion source having wide output current operating range 失效
标题翻译：离子源具有宽输出电流工作范围
公开(公告)号：US6060718A
公开(公告)日：2000-05-09
申请号：US31423
申请日：1998-02-26
申请人： Adam A. Brailove , Masateru Sato
发明人： Adam A. Brailove , Masateru Sato
IPC分类号： H01J27/08 , H01J27/16 , H01J37/08 , H01J37/317 , H01L21/265 , H01J27/00
CPC分类号： H01J27/16 , H01J2237/31701
摘要： An attenuator (90) for an ion source (26) is provided. The ion source comprises a plasma chamber (76) in which a gas is ionized by an exciter (78) to create a plasma which is extractable through at least one aperture (64) in an apertured portion (50) of the chamber to form an ion beam. The attenuator (90) comprises a member (90) positioned within the chamber (76) intermediate the exciter (78) and the at least one aperture (64), the member providing at least one first opening (97) corresponding the at least one aperture (64), and being moveable between first and second positions with respect to the at least one aperture. In one embodiment, in the first position, the member is positioned adjacent the aperture (64) to obstruct at least a portion of the aperture, and in the second position the member is positioned away from the aperture (64) so as not to obstruct the aperture. In a second embodiment, the aperture (64) resides in an aperture plate (50) and (i) the member and the aperture plate form a generally closed region (102) between the aperture plate and the chamber (76) when the member is in the first position, and (ii) the aperture (64) is in direct communication with the chamber (76) when the member is in the second position. In this second embodiment, plasma within the chamber (76) diffuses through the region (102) before being extracted through the aperture in the first position, and plasma within the chamber is extracted directly through the aperture in the second position.
摘要翻译：提供了一种用于离子源（26）的衰减器（90）。离子源包括等离子体室（76），其中气体被激发器（78）电离以产生等离子体，该等离子体可以通过腔室的有孔部分（50）中的至少一个孔（64）可提取，以形成离子束。衰减器（90）包括位于激励器（78）和至少一个孔（64）之间的腔室（76）内的构件（90），该构件提供至少一个对应于至少一个的第一开口（97）孔（64），并且可相对于所述至少一个孔在第一和第二位置之间移动。在一个实施例中，在第一位置，构件定位成邻近孔（64）以阻挡孔的至少一部分，并且在第二位置，构件远离孔（64）定位成不会阻塞光圈。在第二实施例中，孔（64）位于孔板（50）中，并且（i）构件和孔板在孔板和腔室（76）之间形成大致闭合的区域（102），当构件为在第一位置处，和（ii）当构件处于第二位置时，孔（64）与腔室（76）直接连通。在该第二实施例中，室（76）内的等离子体在通过第一位置的孔被抽出之前扩散通过区域（102），腔室内的等离子体直接通过第二位置的孔被提取。

10. 发明授权

US6025602A Ion implantation system for implanting workpieces 失效
标题翻译：用于植入工件的离子植入系统
公开(公告)号：US6025602A
公开(公告)日：2000-02-15
申请号：US66180
申请日：1998-04-23
申请人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
发明人： Peter H. Rose , Julian G. Blake , Adam A. Brailove , Zhongmin Yang , Richard F. McRay , Barbara J. Hughey
IPC分类号： H01J27/14 , H01J37/08 , H01J37/18 , H01J37/30 , H01J37/304 , H01J37/317 , H01L21/00 , H01L21/677 , H01L21/683 , H01J37/20
CPC分类号： H01L21/67109 , H01J27/14 , H01J37/08 , H01J37/18 , H01J37/3002 , H01J37/3007 , H01J37/304 , H01J37/3171 , H01L21/67069 , H01L21/67745 , H01L21/67748 , H01L21/67751 , H01L21/67778 , H01L21/6838 , H01J2237/022 , H01J2237/083 , H01J2237/184 , H01J2237/2001 , H01J2237/2007 , H01J2237/20228 , H01J2237/204 , H01J2237/31701 , H01J2237/31705
摘要： An ion implantation system that rapidly and efficiently processes large quantities of workpieces, such as flat panel displays. The ion implantation system includes a high vacuum process chamber that mounts an ion source, a single workpiece translating stage, and a loadlock. The single workpiece handling assembly mounted within the process chamber both removes the workpiece from the loadlock and supports the workpiece during implantation by the ion beam generated by the ion source. The process chamber is in selective fluid communication with a loadlock assembly, which in turn is mechanically integrated with a workpiece loading or end station. Additionally, the workpiece handling assembly includes a translation stage or element for translating the workpiece in a linear scanning direction during implantation. This linear scanning direction extends along a path transverse or orthogonal to the horizontal longitudinal axis of the implantation system. According to one practice, the scanning direction and the longitudinal axis form an angle therebetween that is less than or equal to about 85 degrees.
摘要翻译：一种快速有效地处理大量工件的离子注入系统，如平板显示器。离子注入系统包括安装离子源的高真空处理室，单个工件平移台和负载锁。安装在处理室内的单个工件处理组件都将工件从装载锁上移除，并通过由离子源产生的离子束在植入期间支撑工件。处理室与负载锁组件选择性地流体连通，负载锁组件又与工件加载或终端机械地集成。另外，工件处理组件包括用于在植入期间沿线性扫描方向平移工件的平移台或元件。该线性扫描方向沿着与植入系统的水平纵向轴线横向或正交的路径延伸。根据一个实践，扫描方向和纵向轴线之间形成小于或等于约85度的角度。

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