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1. 发明授权

US07151844B2 Image sensor method and apparatus having hardware implemented edge detection processing 有权
公开(公告)号：US07151844B2
公开(公告)日：2006-12-19
申请号：US10011172
申请日：2001-12-06
申请人： Charles Neil Stevenson , Ronald Michael Lesperance , Frank J. Schauerte , John Richard Troxell
发明人： Charles Neil Stevenson , Ronald Michael Lesperance , Frank J. Schauerte , John Richard Troxell
IPC分类号： G06K9/00
CPC分类号： G06K9/00798 , G06K9/4609 , G06K9/60 , G06K9/605 , H01L27/14621
摘要： An image sensor comprising an integrated circuit chip that includes both a pixel array and edge detection circuitry hardwired together on the chip. The pixel array provides an addressable, non-destructive readout of the pixel data, with the edge detection circuit providing a hardwired implementation of a pair of n×n masks that are convolved with the pixel array data to thereby generate horizontal and vertical edge data that is combined together and outputted by the image sensor. The masks are implemented as a pair of one-dimensional filters, with one of the filters being a one-dimensional Gaussian filter used to smooth the pixel data along one axis and the other filter providing a first derivative Gaussian function to detect edges along the other, orthogonal axis. The non-destructibility of the readout from the pixel array eliminates the need for buffering large amounts of pixel data and the use of separable, one-dimensional filters permits each mask to be implemented using only n simultaneous outputs from the array, 2n weights, and n−1 buffers for temporary storage of the smoothed pixel data.

2. 发明授权

US07054041B2 Image sensor method and apparatus having addressable pixels and non-destructive readout 有权
公开(公告)号：US07054041B2
公开(公告)日：2006-05-30
申请号：US10008907
申请日：2001-12-06
申请人： Charles Neil Stevenson , Frank J. Schauerte , John Richard Troxell
发明人： Charles Neil Stevenson , Frank J. Schauerte , John Richard Troxell
IPC分类号： H04N1/46
CPC分类号： H01L27/14609
摘要： An image sensor having an array of pixel elements constructed using a two level polysilicon CMOS process that provides individual addressability and a non-destructive readout of the pixels. The pixel elements each includes a substrate, an insulating layer formed on the substrate, a collection capacitor electrode, a transfer electrode, a readout capacitor electrode, and a readout transistor. The transfer electrode is located between the collection and readout capacitor electrodes and all three electrodes are electrically isolated from the substrate and each other by the insulating layer. The collection capacitor electrode and insulating layer are transparent so that incident light can pass through these elements and be absorbed by the substrate. A bias voltage is applied to the collection electrode to form a depletion region in the substrate where photoelectrically generated charge is collected. The charge is then transferred to a second depletion region underneath the readout capacitor electrode by applying a bias voltage to the transfer electrode. The readout transistor has an insulated gate connected to the readout capacitor electrode, so that it can generate a pixel data output signal indicative of the charge that is now stored under the readout capacitor electrode. This reading out of the pixel data is therefore non-destructive, allowing the pixel to be read multiple times without loss of information. An image sensor so constructed can be used in conjunction with on-chip image processing circuits for performing such tasks as edge detection and other algorithms that involve convolutions or other combinations of pixel data.

3. 发明授权

US06180937B2 Photoresponsive device for detection of long and short wavelength photons 失效
标题翻译：用于检测长波长和短波长光子的光响应装置
公开(公告)号：US06180937B2
公开(公告)日：2001-01-30
申请号：US09303629
申请日：1999-05-03
申请人： John Richard Troxell , Charles Neil Stevenson , Frank J. Schauerte
发明人： John Richard Troxell , Charles Neil Stevenson , Frank J. Schauerte
IPC分类号： H01L3100
CPC分类号： H01L31/022408
摘要： A photoresponsive device wherein a plurality of slots is formed in a continuous polycrystalline silicon film that forms a top electrode of the photoresponsive device structure. The resulting “picket fence-like” fingers are capable of generating a depletion region that extends beyond the physical extent of the fingers themselves. The shorter wavelengths of light can reach these unobstructed depletion areas of the substrate and be rapidly detected instead of being absorbed in the electrode. By appropriate spacing of the individual fingers, the individual depletion regions can be effectively merged into one continuous depletion region.
摘要翻译：一种光响应装置，其中多个狭缝形成在形成光响应装置结构的顶电极的连续多晶硅膜中。所产生的“栅栏状”手指能够产生超出手指本身的物理范围的耗尽区域。较短的波长的光可以到达衬底的这些无阻碍的耗尽区域并且被快速检测，而不是被吸收在电极中。通过单个手指的适当间隔，可以将各个耗尽区域有效地合并成一个连续耗尽区域。

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