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1. 发明申请

US20080098164A1 SRAM Cache & Flash Micro-Controller with Differential Packet Interface 失效
标题翻译：具有差分数据包接口的SRAM缓存和闪存微控制器
公开(公告)号：US20080098164A1
公开(公告)日：2008-04-24
申请号：US11876251
申请日：2007-10-22
申请人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen
发明人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0866 , G06F2212/2022 , G06F2212/2515
摘要： A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The SRAM buffer also operates as a cache of flash data after booting is complete. Cache read and write hits use the SRAM cache rather than flash memory, while old cache lines and read misses access the flash memory. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory. The flash microcontroller uses a differential interface to the external host, with a differential transceiver and a differential serial interface. Frame, packet, and encoded clock processing is also performed by the serial interface.
摘要翻译：闪存微控制器具有静态随机存取存储器（SRAM）缓冲器，其存储从闪存读取的几个引导代码块。引导完成后，SRAM缓冲区还可以作为闪存数据缓存。缓存读取和写入命中使用SRAM缓存而不是闪存，而旧的缓存行和读取未命中访问闪存。外部主机和微控制器均由缓冲在SRAM缓冲区中的引导代码引导。引导加载器状态机读取闪存ID，并使用Flash存储器的时序参数对闪存参数寄存器进行编程。闪存单片机使用与外部主机的差分接口，具有差分收发器和差分串行接口。帧，分组和编码时钟处理也由串行接口执行。

2. 发明申请

US20080065794A1 Chained DMA for Low-Power Extended USB Flash Device Without Polling 失效
标题翻译：用于低功耗扩展USB闪存设备的链接DMA，无轮询
公开(公告)号：US20080065794A1
公开(公告)日：2008-03-13
申请号：US11928124
申请日：2007-10-30
申请人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
发明人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
IPC分类号： G06F13/28
CPC分类号： G06F13/28 , Y02D10/14
摘要： An extended Universal-Serial Bus (EUSB) host has reduced loading by using radio frequency (RF) transceivers or direct wiring traces rather than a pair of legacy USB cables. The reduced loading opens the eye pattern. The EUSB device transfers internal data using chained Direct-Memory Access (DMA). Registers in a DMA controller point to a vector table that has vector entries, each pointing to a destination and a source. The source is a memory table for a memory group. The memory table has entries for several memory segments. Each memory-table entry has a pointer to a memory segment and a byte count for the segment. Once all bytes in the segment are transferred, a flag in the entry indicates when another memory segment follows within the memory group. When an END flag is read, then vector table is advanced to the next vector entry, and another memory group of memory segments processed.
摘要翻译：扩展的通用串行总线（EUSB）主机通过使用射频（RF）收发器或直接布线轨迹而不是一对传统的USB电缆减少了负载。减少负荷打开眼睛图案。 EUSB设备使用链接的直接内存访问（DMA）传输内部数据。 DMA控制器中的寄存器指向具有向量条目的向量表，每个向量表指向一个目的地和一个源。源是内存组的内存表。内存表有几个内存段的条目。每个存储表条目具有指向存储器段的指针和段的字节计数。一旦片段中的所有字节都被传送，该条目中的标志表示在存储器组中跟随其他内存段的时间。读取END标志时，向量表前进到下一个向量条目，并处理另一个内存段的内存组。

3. 发明申请

US20080046608A1 Low-Power Extended USB Flash Device Without Polling 审中-公开
标题翻译：低功耗扩展USB闪存设备，无轮询
公开(公告)号：US20080046608A1
公开(公告)日：2008-02-21
申请号：US11925933
申请日：2007-10-27
申请人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
发明人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
IPC分类号： G06F3/00
CPC分类号： G06F13/4045 , Y02D10/14 , Y02D10/151
摘要： An extended Universal-Serial Bus (EUSB) host enters a suspend mode rather than poll an EUSB device that is busy performing a memory or other operation. Power is saved since polling is avoided. The busy EUSB device sends a not-yet NYET signal back to the EUSB host to instruct the host to enter the suspend mode. When the EUSB device is ready to continue transfer with the host, the EUSB device wakes up the host by sending a ready RDY signal back to the host. The NYET and RDY signals may be tokens or flags in serial packets sent over a full-duplex connection to the host with two sets of differential pairs. Transfers may be re-started by the host after suspension once the requested data is read from flash memory, or space is made available in a sector buffer by completing earlier writes to flash memory.
摘要翻译：扩展的通用串行总线（EUSB）主机进入暂停模式，而不是轮询正忙于执行内存或其他操作的EUSB设备。省电，因为避免轮询。繁忙的EUSB设备向EUSB主机发送一个尚未发送的NYET信号，指示主机进入挂起模式。当EUSB设备准备好继续与主机进行传输时，EUSB设备通过将准备好的RDY信号发送回主机来唤醒主机。 NYET和RDY信号可以是通过全双工连接发送到具有两组差分对的主机的串行数据包中的令牌或标志。一旦所请求的数据从闪存中读取，主机可以重新启动传输，或者通过完成对闪存的更早写入，在扇区缓冲器中可用空间。

4. 发明申请

US20080034154A1 Multi-Channel Flash Module with Plane-Interleaved Sequential ECC Writes and Background Recycling to Restricted-Write Flash Chips 有权
标题翻译：具有平面交错顺序ECC的多通道闪存模块写入和背景回收限制写入闪存芯片
公开(公告)号：US20080034154A1
公开(公告)日：2008-02-07
申请号：US11871627
申请日：2007-10-12
申请人： Charles Lee , Abraham Ma , Frank Yu , David Chow , Ming-Shiang Shen
发明人： Charles Lee , Abraham Ma , Frank Yu , David Chow , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0607 , G06F12/0246 , G06F2212/7201 , G06F2212/7203 , G06F2212/7205 , G06F2212/7208 , G11C16/0408 , G11C2211/5649
摘要： A RAM mapping table is restored from flash memory using plane, block, and page addresses generated by a physical sequential address counter. The RAM mapping table is restored following a plane-interleaved sequence generated by the physical sequential address counter using interleaved bits extracted from the lowest bits of the logical block index. These plane-interleave bits are split into a LSB and a MSB, with middle physical block bits between the LSB and MSB. The physical sequential address counter generates a physical block number by incrementing the plane-interleave bits before the middle physical block bits, and then relocating the MSB to above the middle physical block bits. This causes blocks to be accessed in a low-high sequence of 0, 1, 4096, 4097, 2, 3, 4098, 4099, etc. in the four planes of flash memory. Background recycling and ECC writes are also performed.
摘要翻译：使用由物理顺序地址计数器生成的平面，块和页面地址从闪存中恢复RAM映射表。 RAM映射表在使用从逻辑块索引的最低位提取的交错比特的物理顺序地址计数器产生的平面交织序列之后恢复。这些平面交织位分为LSB和MSB，LSB与MSB之间的中间物理块位。物理顺序地址计数器通过在中间物理块位之前递增平面交织比特，然后将MSB重定位到中间物理块比特之上来生成物理块号。这导致在闪存的四个平面中以0,1,4096,4097,2,3,40,40,4099等的低高序列访问块。还执行后台回收和ECC写入。

5. 发明申请

US20080034153A1 Flash Module with Plane-Interleaved Sequential Writes to Restricted-Write Flash Chips 有权
标题翻译：闪存模块与平面交错顺序写入限制写入闪存芯片
公开(公告)号：US20080034153A1
公开(公告)日：2008-02-07
申请号：US11871011
申请日：2007-10-11
申请人： Charles Lee , Frank Yu , Abraham Ma , David Chow , Ming-Shiang Shen
发明人： Charles Lee , Frank Yu , Abraham Ma , David Chow , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/0607 , G06F2212/7201 , G06F2212/7208 , G11C11/5621 , G11C16/0408
摘要： A flash memory controller on a PCIE bus controls flash-memory modules on a flash bus. The flash-memory modules are plane-interleaved using interleaved bits extracted from the lowest bits of the logical block index. These plane-interleave bits are split into a LSB and a MSB, with middle physical block bits between the LSB and MSB. A physical sequential address counter generates a physical block number by incrementing the plane-interleave bits before the middle physical block bits, and then relocating the MSB to above the middle physical block bits. This causes blocks to be accessed in a low-high sequence of 0, 1, 4096, 4097, 2, 3, 4098, 4099, etc. in the four planes of flash memory. A RAM physical page valid table tracks valid pages in the four planes, while a RAM mapping table stores the plane, block, and page addresses for logical sectors generated by the physical sequential address counter.
摘要翻译： PCIE总线上的闪存控制器控制闪存总线上的闪存模块。闪存模块使用从逻辑块索引的最低位提取的交错比特进行平面交织。这些平面交织位分为LSB和MSB，LSB与MSB之间的中间物理块位。物理顺序地址计数器通过在中间物理块比特之前递增平面交织比特，然后将MSB重新定位到中间物理块比特之上来生成物理块号。这导致在闪存的四个平面中以0,1,4096,4097,2,3,40,40,4099等的低高序列访问块。 RAM物理页有效表跟踪四个平面中的有效页面，而RAM映射表存储由物理顺序地址计数器生成的逻辑扇区的平面，块和页面地址。

6. 发明申请

US20080082736A1 MANAGING BAD BLOCKS IN VARIOUS FLASH MEMORY CELLS FOR ELECTRONIC DATA FLASH CARD 审中-公开
标题翻译：用于电子数据闪存卡的各种闪存存储器中的管理块
公开(公告)号：US20080082736A1
公开(公告)日：2008-04-03
申请号：US11864684
申请日：2007-09-28
申请人： David Chow , Charles Lee , Abraham Ma , Frank Yu , Edward Lee , Ming-Shiang Shen
发明人： David Chow , Charles Lee , Abraham Ma , Frank Yu , Edward Lee , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F2212/1036 , G06F2212/7203 , G06F2212/7211
摘要： An electronic data flash card accessible by a host computer, includes a flash memory controller connected to a flash memory device, and an input-output interface circuit activated to establish a communication with the host. In an embodiment, the flash card uses a USB interface circuit for communication with the host. A flash memory controller includes an arbitrator for mapping logical addresses with physical block addresses, and for performing block management operations including: storing reassigned data to available blocks, relocating valid data in obsolete blocks to said available blocks and reassigning logical block addresses to physical block addresses of said available blocks, finding bad blocks of the flash memory device and replacing with reserve blocks, erasing obsolete blocks for recycling after relocating valid data to available blocks, and erase count wear leveling of blocks, etc. Furthermore, each flash memory device includes an internal buffer for accelerating the block management operations.
摘要翻译：由主机可访问的电子数据闪存卡包括连接到闪速存储器件的闪存控制器和被激活以建立与主机的通信的输入 - 输出接口电路。在一个实施例中，闪存卡使用USB接口电路与主机进行通信。闪速存储器控制器包括用于将逻辑地址与物理块地址对准的仲裁器，并且用于执行块管理操作，包括：将重新分配的数据存储到可用块，将过时块中的有效数据重定位到所述可用块并将逻辑块地址重新分配给物理块地址的所述可用块，找到闪存设备的坏块并用备用块替换，在将有效数据重新定位到可用块之后擦除用于再循环的废弃块，以及擦除块的计数损耗均衡等。此外，每个闪存设备包括内部缓冲区，用于加快块管理操作。

7. 发明申请

US20080040598A1 Flash micro-controller with shadow boot-loader SRAM for dual-device booting of micro-controller and host 失效
标题翻译：闪存微控制器带有引导加载器的SRAM，用于微控制器和主机的双设备启动
公开(公告)号：US20080040598A1
公开(公告)日：2008-02-14
申请号：US11875648
申请日：2007-10-19
申请人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen
发明人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen
IPC分类号： G06F15/177
CPC分类号： G06F9/441
摘要： A flash microcontroller has a Static Random-Access-Memory (SRAM) buffer that stores several blocks of boot code read from a flash memory. The boot code includes an initial boot loader, boot code and a control program that are executed by the flash microcontroller, and an operating system OS image and an external-host control program that are executed by an external host. Both the external host and the microcontroller are booted from boot code buffered in the SRAM buffer. A first-reset-read address from the external host is captured by the microcontroller during its boot sequence and stored in a mapping table along with a physical address of the block in the SRAM buffer with the operating system OS image and the external-host control program. A boot-loader state machine reads the flash ID and programs flash parameter registers with timing parameters for the flash memory.
摘要翻译：闪存微控制器具有静态随机存取存储器（SRAM）缓冲器，其存储从闪存读取的几个引导代码块。引导代码包括由闪存微控制器执行的初始引导加载程序，引导代码和控制程序，以及由外部主机执行的操作系统OS映像和外部主机控制程序。外部主机和微控制器均由缓冲在SRAM缓冲区中的引导代码引导。微控制器在其引导序列期间捕获来自外部主机的第一复位读取地址，并将其与SRAM缓冲器中具有操作系统OS映像和外部主机控制的块的物理地址一起存储在映射表中程序。引导加载器状态机读取闪存ID，并使用Flash存储器的时序参数对闪存参数寄存器进行编程。

8. 发明申请

US20080065796A1 High-Level Bridge From PCIE to Extended USB 失效
标题翻译：从PCIE到扩展USB的高级桥
公开(公告)号：US20080065796A1
公开(公告)日：2008-03-13
申请号：US11926636
申请日：2007-10-29
申请人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
发明人： Charles Lee , David Chow , Abraham Ma , Frank Yu , Ming-Shiang Shen , Horng-Yee Chou
IPC分类号： G06F13/42
CPC分类号： G06F13/28 , G06F12/1416 , G06F21/32 , G06F21/78 , G06K9/00087 , G06K19/07 , G06K19/07354 , G07C9/00087
摘要： An extended Universal-Serial Bus (EUSB) bridge to a host computer can have Peripheral Components Interconnect Express (PCIE) protocol layers on one side of the bridge, and EUSB layers on the other side of the bridge, with a high-level bridging converter module connecting the upper layers. The PCIE physical, data-link, and transport layers may be eliminated by integrating the bridge with an I/O controller. PCIE requests and data payloads are directly sent to the bridge, rather than low-level PCIE physical signals. The PCIE data payloads are converted to EUSB data payloads by a high-level direct bridging converter module. Then the EUSB data payloads are passed down to an EUSB transaction layer, an EUSB data-link layer, and an EUSB physical layer which drives and senses physical electrical signals on both differential pairs of the EUSB bus.
摘要翻译：到主机的扩展通用串行总线（EUSB）桥可以在桥的一侧具有外围组件互连Express（PCIE）协议层，在桥的另一侧可以具有高级桥接转换器模块连接上层。可以通过将桥与I / O控制器集成来消除PCIE物理，数据链路和传输层。 PCIE请求和数据有效载荷直接发送到桥，而不是低级PCIE物理信号。 PCIE数据有效载荷通过高级直接桥接转换器模块转换为EUSB数据有效载荷。然后，EUSB数据有效载荷被传递到EUSB事务层，EUSB数据链路层和EUSB物理层，其在EUSB总线的两个差分对上驱动和感测物理电信号。

9. 发明申请

US20080052452A1 ELECTRONIC DATA FLASH CARD WITH VARIOUS FLASH MEMORY CELLS 审中-公开
公开(公告)号：US20080052452A1
公开(公告)日：2008-02-28
申请号：US11929859
申请日：2007-10-30
申请人： David Chow , Frank Yu , Charles Lee , Abraham Ma , Ming-Shiang Shen
发明人： David Chow , Frank Yu , Charles Lee , Abraham Ma , Ming-Shiang Shen
IPC分类号： G06F12/00
CPC分类号： G06F12/0246 , G06F12/1416 , G06F21/32 , G06F21/78 , G06F2212/7202 , G06F2212/7208 , G06K9/00087 , G06K19/07 , G06K19/07354 , G07C9/00087
摘要： An electronic data flash card is accessible by a host computer, and includes a processing unit connected to a flash memory device that stores a data file, and an input-output interface circuit activated so as to establish a communication with the host computer. In an embodiment, the electronic data flash card uses a USB input/output interface circuit for communication with the host computer. A flash memory controller includes an index for converting logical addresses sent by the host computer into physical addresses associated with sectors of the flash memory device. The index is controlled by arbitration logic referencing to values from various look up tables and valid data stored in the flash memory device. The flash memory controller further includes a first-in-first-out unit (FIFO) for recycling obsolete sectors of the flash memory device in the background process so that they are available for reprogramming.

10. 发明申请

US20080065788A1 System and method for producing high volume flash memory cards 审中-公开
标题翻译：用于生产大容量闪存卡的系统和方法
公开(公告)号：US20080065788A1
公开(公告)日：2008-03-13
申请号：US11979102
申请日：2007-10-31
申请人： David Chow , Sidney Young , Frank Yu , Abraham Ma , Ming-Shiang Shen
发明人： David Chow , Sidney Young , Frank Yu , Abraham Ma , Ming-Shiang Shen
IPC分类号： G06F13/10
CPC分类号： G06F12/1416 , G06F21/32 , G06F21/78 , G07C9/00087 , G07C2009/00095 , H01R13/629
摘要： A system for producing high volume flash memory cards includes a processing unit, a PC interface for connecting to an external PC, a PC drive circuit connected to the PC interface and the processing unit, a card interface for connecting to an external flash memory card, and a card drive circuit connected to the card interface and the processing unit. The PC drive circuit realizes communication between the PC and the processing unit. The card drive circuit realizes communication between the flash memory card and the processing unit. The processing unit receives command or data from the PC interface, and sends card re-initialization command or data to the flash memory card via the card interface.
摘要翻译：一种用于生产大容量闪存卡的系统包括处理单元，用于连接到外部PC的PC接口，连接到PC接口的PC驱动电路和处理单元，用于连接到外部闪存卡的卡接口，以及连接到卡接口和处理单元的卡驱动电路。 PC驱动电路实现PC与处理单元之间的通信。卡驱动电路实现闪存卡和处理单元之间的通信。处理单元从PC接口接收命令或数据，并通过卡接口将卡重新初始化命令或数据发送到闪存卡。

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