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    • 1. 发明授权
    • Cable semiconducting shields
    • 电缆半导体屏蔽
    • US6086792A
    • 2000-07-11
    • US345061
    • 1999-06-30
    • Charles G. ReidNorman M. Burns, Jr.
    • Charles G. ReidNorman M. Burns, Jr.
    • C08L23/00C08K3/04C08L23/08C08L31/00C08L33/06H01B1/24H01B7/30H01B9/02H01B7/17
    • H01B1/24
    • A semiconducting composition comprising (i) an olefinic polymer and (ii) about 25 to about 45 percent by weight, based on the weight of the composition, of a carbon black having the following properties:(a) a particle size of at least about 29 nanometers;(b) a tint strength of less than about 100 percent;(c) a loss of volatiles at 950 degrees C in a nitrogen atmosphere of less than about 1 weight percent based on the weight of the carbon black;(d) a DBP oil absorption of about 80 to about 300 cubic centimeters per 100 grams;(e) a nitrogen surface adsorption area of about 30 to about 300 square meters per gram or an iodine adsorption number of about 30 to about 300 grams per kilogram;(f) a CTAB surface area of about 30 to about 150 square meters per gram; and(g) a ratio of property (e) to property (f) of greater than about 1.1.
    • 一种半导体组合物,其包含(i)烯属聚合物和(ii)基于组合物重量的约25至约45重量%的具有以下性质的炭黑:(a)至少约 29纳米; (b)色调强度小于约100%; (c)在氮气气氛中950℃下挥发物的损失小于约1重量%,基于炭黑的重量; (d)每100克约80至约300立方厘米的DBP吸油量; (e)约30至约300平方米/克的氮表面吸附面积或每千克约30至约300克的碘吸附数; (f)CTAB表面积约为30至150平方米/克; 和(g)性质(e)与性质(f)之比大于约1.1。