会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Methods for forming an undercut region and electronic devices incorporating the same
    • 形成底切区域的方法和包含该切削区域的电子装置
    • US07732810B2
    • 2010-06-08
    • US11840392
    • 2007-08-17
    • Nugent TruongCharles Douglas Macpherson
    • Nugent TruongCharles Douglas Macpherson
    • H01L51/50
    • H01L51/0003H01L27/3246H01L27/3283
    • An electronic device having a substrate structure having an undercut region is provided and further included is a method for forming an undercut region of a substrate structure. The method includes forming a patterned protective layer over a first electrode. The method also includes forming the substrate structure over the patterned protective layer. An opening within the substrate structure overlies an exposed portion of the substrate structure. The method further includes removing the exposed portion of the patterned protective layer, thereby exposing a portion of the first electrode and forming an undercut region of the substrate structure. The method still further includes depositing a liquid over the first electrode after removing the exposed portion of the patterned protective layer, and solidifying the liquid to form a solid layer.
    • 提供具有底切区域的基板结构的电子设备,并且还包括用于形成基板结构的底切区域的方法。 该方法包括在第一电极上形成图案化保护层。 该方法还包括在图案化的保护层上形成衬底结构。 衬底结构内的开口覆盖衬底结构的暴露部分。 该方法还包括去除图案化保护层的暴露部分,从而暴露第一电极的一部分并形成衬底结构的底切区域。 该方法还包括在去除图案化保护层的暴露部分之后,在第一电极上沉积液体,并固化液体以形成固体层。
    • 5. 发明申请
    • METHODS FOR FORMING AN UNDERCUT REGION AND ELECTRONIC DEVICES INCORPORATING THE SAME
    • 形成下属区域的方法和包含该方法的电子设备
    • US20080210931A1
    • 2008-09-04
    • US11840392
    • 2007-08-17
    • Nugent TruongCharles Douglas Macpherson
    • Nugent TruongCharles Douglas Macpherson
    • H01L51/50
    • H01L51/0003H01L27/3246H01L27/3283
    • An electronic device having a substrate structure having an undercut region is provided and further included is a method for forming an undercut region of a substrate structure. The method includes forming a patterned protective layer over a first electrode. The method also includes forming the substrate structure over the patterned protective layer. An opening within the substrate structure overlies an exposed portion of the substrate structure. The method further includes removing the exposed portion of the patterned protective layer, thereby exposing a portion of the first electrode and forming an undercut region of the substrate structure. The method still further includes depositing a liquid over the first electrode after removing the exposed portion of the patterned protective layer, and solidifying the liquid to form a solid layer.
    • 提供具有底切区域的基板结构的电子设备,并且还包括用于形成基板结构的底切区域的方法。 该方法包括在第一电极上形成图案化保护层。 该方法还包括在图案化的保护层上形成衬底结构。 衬底结构内的开口覆盖衬底结构的暴露部分。 该方法还包括去除图案化保护层的暴露部分,从而暴露第一电极的一部分并形成衬底结构的底切区域。 该方法还包括在去除图案化保护层的暴露部分之后,在第一电极上沉积液体,并固化液体以形成固体层。