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1. 发明授权

US08395877B2 High-speed electrostatic actuation of MEMS-based devices 有权
标题翻译：基于MEMS的器件的高速静电驱动
公开(公告)号：US08395877B2
公开(公告)日：2013-03-12
申请号：US12370356
申请日：2009-02-12
申请人： Charalampos Pozidis , Angeliki Pantazi , Abu Sebastian , Deepak Ranjan Sahoo
发明人： Charalampos Pozidis , Angeliki Pantazi , Abu Sebastian , Deepak Ranjan Sahoo
IPC分类号： G02B26/00 , G02B26/02
CPC分类号： G09G3/3433 , G09G2320/0252 , G11C23/00
摘要： A micro-electro mechanical device includes a first structure, a second structure offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position.
摘要翻译：微机电装置包括第一结构，通过间隙从第一结构偏移的第二结构。第一结构构造成静电致动以相对于第二结构偏转。脉冲发生器被配置为组合至少两个不同的脉冲以在初始位置和最终位置之间静电驱动第一结构和第二结构中的至少一个。

2. 发明申请

US20100201289A1 HIGH-SPEED ELECTROSTATIC ACTUATION OF MEMS-BASED DEVICES 有权
标题翻译：基于MEMS的器件的高速静电激励
公开(公告)号：US20100201289A1
公开(公告)日：2010-08-12
申请号：US12370356
申请日：2009-02-12
申请人： Charalampos Pozidis , Angeliki Pantazi , Abu Sebastian , Deepak Ranjan Sahoo
发明人： Charalampos Pozidis , Angeliki Pantazi , Abu Sebastian , Deepak Ranjan Sahoo
IPC分类号： H01L41/04 , H02N11/00
CPC分类号： G09G3/3433 , G09G2320/0252 , G11C23/00
摘要： A micro-electro mechanical device includes a first structure, a second structure offset from the first structure by a gap. The first structure is configured to be electrostatically actuated to deflect relative to second structure. A pulse generator is configured to combine at least two different pulses to electrostatically drive at least one of the first structure and the second structure between an initial position and a final position.
摘要翻译：微机电装置包括第一结构，通过间隙从第一结构偏移的第二结构。第一结构构造成静电致动以相对于第二结构偏转。脉冲发生器被配置为组合至少两个不同的脉冲以在初始位置和最终位置之间静电驱动第一结构和第二结构中的至少一个。

3. 发明申请

US20110321202A1 DYNAMIC MODE NANO-SCALE IMAGING AND POSITION CONTROL USING DEFLECTION SIGNAL DIRECT SAMPLING OF HIGHER MODE-ACTUATED MICROCANTILEVERS 有权
标题翻译：动态模式NANO-SCALE成像和位置控制采用偏转信号直接采样高效模式微处理器
公开(公告)号：US20110321202A1
公开(公告)日：2011-12-29
申请号：US12824337
申请日：2010-06-28
申请人： Venkataraman Kartik , Charalampos Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
发明人： Venkataraman Kartik , Charalampos Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
IPC分类号： G01Q10/00 , G01Q20/02
CPC分类号： G01Q10/045 , G01Q60/34 , G01Q60/38 , G01Q70/06
摘要： An apparatus is provided and includes a cantilever having a tip at a distal end thereof disposed with the tip positioned an initial distance from a sample and a circuit electrically coupled to a substrate on which the sample is layered and the cantilever to simultaneously apply direct and alternating currents to deflect the cantilever and to cause the tip to oscillate about a point at a second distance from the sample, which is shorter than the initial distance, between first positions, at which the tip contacts the sample, and second positions, at which the tip is displaced from the sample.
摘要翻译：提供了一种装置，其包括悬臂，该悬臂具有在其末端处的尖端，其顶端设置有与样品和电耦合到其上层叠有样品的基底的电路的初始距离，并且悬臂同时施加直接和交替电流使悬臂偏转，并引起尖端围绕与样品相距离第一距离处的第二距离处的第一距离处的尖端振荡，第一位置与尖端接触样品的第一位置之间以及第二位置尖端从样品中移位。

4. 发明授权

US08026719B2 Magneto-resistance based topography sensing 有权
标题翻译：基于磁阻的地形感测
公开(公告)号：US08026719B2
公开(公告)日：2011-09-27
申请号：US12245171
申请日：2008-10-03
申请人： Peter Baechtold , Urs T. Duerig , Walter Haeberle , Armin W. Knoll , Charalampos Pozidis , Deepak Ranjan Sahoo , Gian R. Salis , Abu Sebastian
发明人： Peter Baechtold , Urs T. Duerig , Walter Haeberle , Armin W. Knoll , Charalampos Pozidis , Deepak Ranjan Sahoo , Gian R. Salis , Abu Sebastian
IPC分类号： G01R33/00
CPC分类号： G01R33/091 , H01L43/08
摘要： A topography sensor and method include a probe configured to traverse a surface to determine a topography. A stray magnetic field is disposed in proximity to the probe. A magneto-resistive sensor is configured so that the stray magnetic field passing through it changes in accordance with positional changes of the probe as the probe tip traverses the surface.
摘要翻译：地形传感器和方法包括配置成横穿表面以确定地形的探针。杂散磁场设置在探头附近。磁阻传感器构造成使得当探针尖端穿过表面时，通过它的杂散磁场根据探针的位置变化而变化。

5. 发明申请

US20100085056A1 MAGNETO-RESISTANCE BASED TOPOGRAPHY SENSING 有权
标题翻译：基于磁阻电阻的地层感测
公开(公告)号：US20100085056A1
公开(公告)日：2010-04-08
申请号：US12245171
申请日：2008-10-03
申请人： Peter Baechtold , Urs T. Duerig , Walter Haeberle , Armin W. Knoll , Charalampos Pozidis , Deepak Ranjan Sahoo , Gian R. Salis , Abu Sebastian
发明人： Peter Baechtold , Urs T. Duerig , Walter Haeberle , Armin W. Knoll , Charalampos Pozidis , Deepak Ranjan Sahoo , Gian R. Salis , Abu Sebastian
IPC分类号： G01V3/08 , H01L43/08
CPC分类号： G01R33/091 , H01L43/08
摘要： A topography sensor and method include a probe configured to traverse a surface to determine a topography. A stray magnetic field is disposed in proximity to the probe. A magneto-resistive sensor is configured so that the stray magnetic field passing through it changes in accordance with positional changes of the probe as the probe tip traverses the surface.
摘要翻译：地形传感器和方法包括配置成横穿表面以确定地形的探针。杂散磁场设置在探头附近。磁阻传感器构造成使得当探针尖端穿过表面时，通过它的杂散磁场根据探针的位置变化而变化。

6. 发明授权

US08026715B2 Magneto-resistance based nano-scale position sensor 有权
标题翻译：基于磁阻的纳米级位置传感器
公开(公告)号：US08026715B2
公开(公告)日：2011-09-27
申请号：US12245243
申请日：2008-10-03
申请人： Charalampos Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
发明人： Charalampos Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
IPC分类号： G01R33/06 , G01R33/00
CPC分类号： G01R33/093 , B82Y25/00 , B82Y35/00 , G01D5/145
摘要： A position sensor and method include a magnetic component, a first magneto-resistive sensor disposed in proximity to the magnet/coil; and a second magneto-resistive sensor disposed in proximity to the magnetic component and the first magneto-resistive sensor. The first magneto-resistive sensor and second magneto-resistive sensor are configured to sense changes in a stray magnetic field created by the magnetic component in accordance with a relative positional change between the magnetic component and the first and second magneto-resistive sensors.
摘要翻译：位置传感器和方法包括磁性部件，设置在磁体/线圈附近的第一磁阻传感器; 以及设置在所述磁性部件和所述第一磁阻传感器附近的第二磁阻传感器。第一磁阻传感器和第二磁阻传感器被配置为根据磁性部件和第一和第二磁阻传感器之间的相对位置变化来感测由磁性部件产生的杂散磁场的变化。

7. 发明申请

US20100085041A1 MAGNETO-RESISTANCE BASED NANO-SCALE POSITION SENSOR 有权
标题翻译：基于磁阻电阻的纳米尺度位置传感器
公开(公告)号：US20100085041A1
公开(公告)日：2010-04-08
申请号：US12245243
申请日：2008-10-03
申请人： Charalamois Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
发明人： Charalamois Pozidis , Deepak Ranjan Sahoo , Abu Sebastian
IPC分类号： G01B7/00 , G01R33/09
CPC分类号： G01R33/093 , B82Y25/00 , B82Y35/00 , G01D5/145
摘要： A position sensor and method include a magnetic component, a first magneto-resistive sensor disposed in proximity to the magnet/coil; and a second magneto-resistive sensor disposed in proximity to the magnetic component and the first magneto-resistive sensor. The first magneto-resistive sensor and second magneto-resistive sensor are configured to sense changes in a stray magnetic field created by the magnetic component in accordance with a relative positional change between the magnetic component and the first and second magneto-resistive sensors.
摘要翻译：位置传感器和方法包括磁性部件，设置在磁体/线圈附近的第一磁阻传感器; 以及设置在所述磁性部件和所述第一磁阻传感器附近的第二磁阻传感器。第一磁阻传感器和第二磁阻传感器被配置为根据磁性部件和第一和第二磁阻传感器之间的相对位置变化来感测由磁性部件产生的杂散磁场的变化。

8. 发明授权

US07360405B2 Method to transiently detect sample features using cantilevers 失效
标题翻译：使用悬臂瞬时检测样品特征的方法
公开(公告)号：US07360405B2
公开(公告)日：2008-04-22
申请号：US11421352
申请日：2006-05-31
申请人： Murti V. Salapaka , Abu Sebastian , Deepak Ranjan Sahoo
发明人： Murti V. Salapaka , Abu Sebastian , Deepak Ranjan Sahoo
IPC分类号： G01B5/28 , G02B6/26
CPC分类号： G01Q10/06 , G01Q20/02 , G01Q30/04 , G01Q60/32
摘要： An approach to determine cantilever movement is presented. An observer based state estimation and statistical signal detection and estimation techniques are applied to Atomic Force Microscopes. A first mode approximation model of the cantilever is considered and an observer is designed to estimate the dynamic states. The cantilever-sample interaction is modeled as an impulsive force applied to the cantilever in order to detect the presence of sample. A generalized likelihood ratio test is performed to obtain the decision rule and the maximum likelihood estimation of the unknown arrival time of the sample profile and unknown magnitude of it. The use of the transient data results in sample detection at least ten times faster than using the steady state characteristics.
摘要翻译：提出了一种确定悬臂运动的方法。基于观察者的状态估计和统计信号检测和估计技术应用于原子力显微镜。考虑了悬臂的第一模态近似模型，并设计了观测器来估计动态。悬臂样品相互作用被建模为施加到悬臂的冲击力，以便检测样品的存在。执行广义似然比检验以获得样本轮廓的未知到达时间的判定规则和未知到达时间的最大似然估计值及其未知幅度。使用瞬态数据导致样品检测比使用稳态特性快至少十倍。

9. 发明授权

US07066014B2 Method to transiently detect samples in atomic force microscopes 失效
标题翻译：用原子力显微镜瞬时检测样品的方法
公开(公告)号：US07066014B2
公开(公告)日：2006-06-27
申请号：US10953195
申请日：2004-09-29
申请人： Murti V. Salapaka , Abu Sebastian , Deepak Ranjan Sahoo
发明人： Murti V. Salapaka , Abu Sebastian , Deepak Ranjan Sahoo
IPC分类号： G01B5/28 , G02B6/26
CPC分类号： G01Q10/06 , G01Q20/02 , G01Q30/04 , G01Q60/32
摘要： An approach to determine cantilever movement is presented. An observer based state estimation and statistical signal detection and estimation techniques are applied to Atomic Force Microscopes. A first mode approximation model of the cantilever is considered and a Kalman filter is designed to estimate the dynamic states. The tip-sample interaction is modeled as an impulsive force applied to the cantilever in order to detect the presence of sample. A generalized likelihood ratio test is performed to obtain the decision rule and the maximum likelihood estimation of the unknown arrival time of the sample profile and unknown magnitude of it. The use of the transient data results in sample detection at least ten times faster than using the steady state characteristics.
摘要翻译：提出了一种确定悬臂运动的方法。基于观察者的状态估计和统计信号检测和估计技术应用于原子力显微镜。考虑了悬臂的第一模态近似模型，并设计了卡尔曼滤波器来估计动态。尖端 - 样品相互作用被建模为施加到悬臂的冲击力，以便检测样品的存在。执行广义似然比检验以获得样本轮廓的未知到达时间的判定规则和未知到达时间的最大似然估计值及其未知幅度。使用瞬态数据导致样品检测比使用稳态特性快至少十倍。

10. 发明申请

US20130214239A1 METHOD FOR MANUFACTORING A CARBON-BASED MEMORY ELEMENT AND MEMORY ELEMENT 有权
标题翻译：用于制造基于碳的存储元件和存储元件的方法
公开(公告)号：US20130214239A1
公开(公告)日：2013-08-22
申请号：US13807422
申请日：2011-06-24
申请人： Daniele Caimi , Evangelos S. Eleftheriou , Charalampos Pozidis , Christophe P. Rossel , Abu Sebastian
发明人： Daniele Caimi , Evangelos S. Eleftheriou , Charalampos Pozidis , Christophe P. Rossel , Abu Sebastian
IPC分类号： H01L45/00
CPC分类号： H01L45/16 , G11C13/0002 , G11C2213/15 , G11C2213/35 , H01L45/04 , H01L45/1253 , H01L45/149
摘要： A method for manufacturing a resistive memory element includes providing a storage layer comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and doping the resistance changeable material with a dopant material.
摘要翻译：一种制造电阻式存储元件的方法包括提供包括电阻可变材料的存储层，所述电阻变化材料包含碳; 提供用于接触所述存储层的接触层，其中所述存储层设置在底部接触层和顶部接触层之间; 并用掺杂剂材料掺杂电阻可变材料。

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