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1. 发明申请

US20110104895A1 METHOD FOR FORMING A PLUG STRUCTURE 有权
标题翻译：形成插管结构的方法
公开(公告)号：US20110104895A1
公开(公告)日：2011-05-05
申请号：US13006358
申请日：2011-01-13
申请人： Chao-Ching Hsieh
发明人： Chao-Ching Hsieh
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/76844 , H01L21/76877
摘要： A method for forming a plug structure includes the following steps. A substrate is provided. The substrate includes a MOS device with a source/drain region, a dielectric layer disposed on the MOS device, an opening defined in the dielectric layer, and a first glue layer disposed on a sidewall and a bottom of the opening. A portion of the first glue layer disposed at the bottom of the opening is punched through to expose the source/drain region. A barrier layer is formed over the substrate after the first glue layer is punched through. The opening is filled with a conductive structure, wherein the barrier layer disposed at the bottom of the opening is remained when the conductive structure is filled into the opening.
摘要翻译：形成插塞结构的方法包括以下步骤。提供基板。衬底包括具有源极/漏极区域的MOS器件，设置在MOS器件上的电介质层，限定在电介质层中的开口，以及设置在开口的侧壁和底部上的第一胶合层。设置在开口底部的第一胶合层的一部分被穿孔以暴露源/漏区。在穿过第一胶层之后，在衬底上形成阻挡层。开口填充有导电结构，其中当导电结构填充到开口中时，设置在开口底部的阻挡层保留。

2. 发明申请

US20080067684A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080067684A1
公开(公告)日：2008-03-20
申请号：US11944462
申请日：2007-11-23
申请人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
发明人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
IPC分类号： H01L23/48
CPC分类号： H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.
摘要翻译：提供了包括至少一个导电结构的半导体器件。导电结构包括含硅导电层，难熔金属硅化物层和保护层。难熔金属硅化物层设置在含硅导电层上。保护层设置在难熔金属硅化物层上。还提供了包括至少一个导电结构的另一半导体器件。导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。难熔金属合金自对准硅化物层设置在含硅导电层的上方。难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。保护层设置在难熔金属合金自对准硅化物层上。

3. 发明申请

US20080009134A1 Method for fabricating metal silicide 审中-公开
标题翻译：金属硅化物的制造方法
公开(公告)号：US20080009134A1
公开(公告)日：2008-01-10
申请号：US11482604
申请日：2006-07-06
申请人： Tsung-Yu Hung , Chun-Chieh Chang , Chao-Ching Hsieh , Yi-Wei Chen , Yu-Lan Chang , Chien-Chung Huang
发明人： Tsung-Yu Hung , Chun-Chieh Chang , Chao-Ching Hsieh , Yi-Wei Chen , Yu-Lan Chang , Chien-Chung Huang
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/28518
摘要： A method for fabricating a metal silicide is described. First, a silicon material layer is provided. An alloy layer is formed on the silicon material layer, and the alloy layer is made from a first metal and a second metal, wherein, the first metal is a refractory metal, and the second metal is selected from a group consisting of Pt, Pd, Mo, Ru, and Ta. A first rapid thermal process (RTP) is performed at a first temperature. A first cleaning process is performed by using a cleaning solution. A second RTP is performed at a second temperature, wherein the second temperature is higher than the first temperature. A second cleaning process is performed by using a cleaning solution including a hydrochloric acid.
摘要翻译：对金属硅化物的制造方法进行说明。首先，提供硅材料层。在硅材料层上形成合金层，合金层由第一金属和第二金属制成，其中第一金属为难熔金属，第二金属选自Pt，Pd ，Mo，Ru和Ta。在第一温度下进行第一快速热处理（RTP）。通过使用清洁溶液进行第一清洁处理。在第二温度下执行第二RTP，其中第二温度高于第一温度。通过使用包含盐酸的清洗溶液进行第二清洗处理。

4. 发明申请

US20070082494A1 METHOD FOR FORMING SILICIDE LAYER 审中-公开
标题翻译：形成硅胶层的方法
公开(公告)号：US20070082494A1
公开(公告)日：2007-04-12
申请号：US11538061
申请日：2006-10-03
申请人： Yi-Wei Chen , Yi-Yiing Chiang , Yu-Lan Chang , Tzung-Yu Hung , Chao-Ching Hsieh
发明人： Yi-Wei Chen , Yi-Yiing Chiang , Yu-Lan Chang , Tzung-Yu Hung , Chao-Ching Hsieh
IPC分类号： C23F1/00 , H01L21/311 , B44C1/22
CPC分类号： H01L21/02057 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.
摘要翻译：提供了一种在衬底上形成金属硅化物的方法。所述方法包括以下步骤：在所述基板上进行含氟等离子体处理以除去所述基板上的多个残留物，其中所述含氟等离子体处理在第一工具系统中进行。然后，第一工具系统的真空系统被破坏。基板从第一工具系统转移到第二工具系统中。在第二工具系统中的衬底上形成金属硅化物层。

5. 发明申请

US20070020925A1 METHOD OF FORMING A NICKEL PLATINUM SILICIDE 审中-公开
标题翻译：形成镍硅酸钠的方法
公开(公告)号：US20070020925A1
公开(公告)日：2007-01-25
申请号：US11161075
申请日：2005-07-22
申请人： Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yi-Wei Chen , Yu-Lan Chang
发明人： Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yi-Wei Chen , Yu-Lan Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/28052
摘要： A substrate having at least one silicon device is provided. A nickel platinum alloy layer is formed on the substrate. A rapid thermal process is performed to react the nickel platinum alloy layer with the silicon device to produce a nickel platinum silicide. A passivation layer is formed on the nickel platinum silicide followed by using a solution consisting of nitric acid and hydrochloric acid to remove unreacted portions of the nickel platinum alloy layer.
摘要翻译：提供具有至少一个硅器件的衬底。在该基板上形成镍铂合金层。执行快速热处理以使镍铂合金层与硅器件反应以产生镍铂硅化物。在镍铂硅化物上形成钝化层，然后使用由硝酸和盐酸组成的溶液来除去镍铂合金层的未反应部分。

6. 发明申请

US20060240666A1 METHOD OF FORMING SILICIDE 审中-公开
标题翻译：形成硅酮的方法
公开(公告)号：US20060240666A1
公开(公告)日：2006-10-26
申请号：US10907891
申请日：2005-04-20
申请人： Chao-Ching Hsieh , Yi-Yiing Chiang , Chien-Chung Huang , Po-Chao Tsou , Kirk Hsu , Tony Lin , Le-Tien Jung
发明人： Chao-Ching Hsieh , Yi-Yiing Chiang , Chien-Chung Huang , Po-Chao Tsou , Kirk Hsu , Tony Lin , Le-Tien Jung
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/76889
摘要： A method of forming silicide is described. A layer of refractory metal is deposited on a substrate, and then a first annealing process is performed to form silicide, followed by removal of unreacted metal. Next, a species implanting process is carried out to implant species of neutral atoms into the silicide to break up lattice structure of the silicide, so that the problem of junction leakage induced by spiking and piping diffusion under high temperature during a subsequent second annealing process is avoided.
摘要翻译：描述了形成硅化物的方法。将难熔金属层沉积在基材上，然后进行第一退火工艺以形成硅化物，随后除去未反应的金属。接下来，进行物种植入工艺以将中性原子的种类植入到硅化物中以破坏硅化物的晶格结构，从而在随后的第二退火过程中由高温引起的尖峰和管道扩散引起的结漏电的问题是避免。

7. 发明授权

US08431487B2 Method for forming a plug structure 有权
标题翻译：形成插头结构的方法
公开(公告)号：US08431487B2
公开(公告)日：2013-04-30
申请号：US13006358
申请日：2011-01-13
申请人： Chao-Ching Hsieh
发明人： Chao-Ching Hsieh
IPC分类号： H01L21/44 , H01L21/4763
CPC分类号： H01L21/76814 , H01L21/76844 , H01L21/76877
摘要： A method for forming a plug structure includes the following steps. A substrate is provided. The substrate includes a MOS device with a source/drain region, a dielectric layer disposed on the MOS device, an opening defined in the dielectric layer, and a first glue layer disposed on a sidewall and a bottom of the opening. A portion of the first glue layer disposed at the bottom of the opening is punched through to expose the source/drain region. A barrier layer is formed over the substrate after the first glue layer is punched through. The opening is filled with a conductive structure, wherein the barrier layer disposed at the bottom of the opening is remained when the conductive structure is filled into the opening.
摘要翻译：形成插塞结构的方法包括以下步骤。提供基板。衬底包括具有源极/漏极区域的MOS器件，设置在MOS器件上的电介质层，限定在电介质层中的开口，以及设置在开口的侧壁和底部上的第一胶合层。设置在开口底部的第一胶合层的一部分被穿孔以暴露源/漏区。在穿过第一胶层之后，在衬底上形成阻挡层。开口填充有导电结构，其中当导电结构填充到开口中时，设置在开口底部的阻挡层保留。

8. 发明授权

US07951662B2 Method of fabricating strained silicon transistor 有权
标题翻译：制造应变硅晶体管的方法
公开(公告)号：US07951662B2
公开(公告)日：2011-05-31
申请号：US12176409
申请日：2008-07-20
申请人： Chao-Ching Hsieh
发明人： Chao-Ching Hsieh
IPC分类号： H01L21/8238
CPC分类号： H01L21/823807 , H01L21/324 , H01L29/6659 , H01L29/7833 , H01L29/7847
摘要： A method of fabricating a strained silicon transistor is provided. Amorphous silicon is formed below the transistor region before the transistor is formed. By using the tensile/compressive strainer, amorphous silicon is recrystallized to form a strained silicon layer. In addition, the dopants in the well can be driven in and activated by using the same annealing process with the amorphous silicon recrystallization.
摘要翻译：提供一种制造应变硅晶体管的方法。在形成晶体管之前，晶体管区域的下方形成无定形硅。通过使用拉伸/压缩过滤器，将非晶硅重结晶以形成应变硅层。此外，可以通过使用与非晶硅重结晶相同的退火工艺来驱动和激活阱中的掺杂剂。

9. 发明授权

US07915127B2 Manufacturing method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07915127B2
公开(公告)日：2011-03-29
申请号：US12509623
申请日：2009-07-27
申请人： Chun-Hsien Lin , Chao-Ching Hsieh
发明人： Chun-Hsien Lin , Chao-Ching Hsieh
IPC分类号： H01L21/336
CPC分类号： H01L29/7843 , H01L29/4966 , H01L29/517 , H01L29/66545 , H01L29/66583 , H01L29/7833
摘要： A method of forming a semiconductor device is described. First, a substrate is provided. Thereafter, a gate structure including, from bottom to top, a high-k layer, a work function metal layer, a wetting layer, a polysilicon layer and a mask layer is formed on the substrate. Afterwards, a spacer is formed on the sidewall of the gate structure. Source/drain regions are then formed in the substrate beside the gate structure. Further, an interlayer dielectric layer is formed over the substrate. Thereafter, a portion of the interlayer dielectric layer is removed to expose the surface of the mask layer. Afterwards, the mask layer and the polysilicon layer are sequentially removed to expose the surface of the wetting layer. A selective chemical vapor deposition process is then performed, so as to bottom-up deposit a metal layer from the surface of the wetting layer.
摘要翻译：描述形成半导体器件的方法。首先，提供基板。此后，在基板上形成从底部到顶部包括高k层，功函数金属层，润湿层，多晶硅层和掩模层的栅极结构。之后，在栅极结构的侧壁上形成间隔物。然后在栅极结构旁边的衬底中形成源/漏区。此外，在衬底上形成层间电介质层。此后，去除部分层间电介质层以暴露掩模层的表面。然后，依次去除掩模层和多晶硅层以露出润湿层的表面。然后进行选择性化学气相沉积工艺，以便从底层向下从润湿层的表面沉积金属层。

10. 发明授权

US07670438B2 Method of removing particles from wafer 有权
标题翻译：从晶片去除颗粒的方法
公开(公告)号：US07670438B2
公开(公告)日：2010-03-02
申请号：US11866746
申请日：2007-10-03
申请人： Yi-Wei Chen , Bao-Tzeng Huang , An-Chi Liu , Chao-Ching Hsieh , Nien-Ting Ho , Kuo-Chih Lai
发明人： Yi-Wei Chen , Bao-Tzeng Huang , An-Chi Liu , Chao-Ching Hsieh , Nien-Ting Ho , Kuo-Chih Lai
IPC分类号： B08B3/04
CPC分类号： B08B3/08 , H01L21/02068 , H01L21/67051
摘要： A method of removing particles from a wafer is provided. The method is adopted after a process for removing unreactive metal of a salicide process or after a salicide process and having oxide residue remaining on a wafer or after a chemical vapor deposition (CVD) process that resulted with particles on a wafer. The method includes performing at least two cycles (stages) of intermediate rinse process. Each cycle of the intermediate rinse process includes conducting a procedure of rotating the wafer at a high speed first, and then conducting a procedure of rotating the wafer at a low speed.
摘要翻译：提供了从晶片去除颗粒的方法。在除去自对准硅化物工艺的非反应性金属或自对准硅化物工艺之后并且在晶片上残留氧化物残余物或在晶片上产生颗粒的化学气相沉积（CVD）工艺之后，采用该方法。该方法包括进行中间漂洗过程的至少两个循环（阶段）。中间漂洗过程的每个循环包括首先进行高速旋转晶片的步骤，然后进行以低速旋转晶片的步骤。

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