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1. 发明授权

US06998305B2 Enhanced selectivity for epitaxial deposition 有权
标题翻译：增强外延沉积的选择性
公开(公告)号：US06998305B2
公开(公告)日：2006-02-14
申请号：US10763948
申请日：2004-01-23
申请人： Chantal J. Arena , Joe P. Italiano , Paul D. Brabant
发明人： Chantal J. Arena , Joe P. Italiano , Paul D. Brabant
IPC分类号： H01L21/8238
CPC分类号： H01L29/66628 , H01L21/02381 , H01L21/02532 , H01L21/02639 , H01L29/7834
摘要： A method of forming an electronic component having elevated active areas is disclosed. The method comprises providing a semiconductor substrate in a processing chamber. The semiconductor substrate has disposed thereon a polycrystalline silicon gate and exposed active areas. The method further comprises performing a deposition process in which a silicon-source gas is supplied into the processing chamber to cause polycrystalline growth on the gate and epitaxial deposition on the active areas. The method further comprises performing a flash etch back process in which polycrystalline material is etched from the gate at a first etching rate and the epitaxial layer is etched from the active areas at a second etching rate. The first etching rate is faster than the second etching rate. The deposition process and the flash etch back process can be repeated cyclically, if desired. In certain other embodiments, the deposition process is a selective epitaxial deposition process, wherein growth occurs in non-oxide regions, but not in oxide regions.
摘要翻译：公开了一种形成具有升高的有效面积的电子部件的方法。该方法包括在处理室中设置半导体衬底。半导体衬底上设置有多晶硅栅极和暴露的有源区。该方法还包括执行沉积工艺，其中将硅源气体供应到处理室中以在栅极上引起多晶生长并在有源区上进行外延沉积。该方法还包括执行闪光回蚀工艺，其中以第一蚀刻速率从栅极蚀刻多晶材料，并且以第二蚀刻速率从有源区蚀刻外延层。第一蚀刻速率比第二蚀刻速率快。如果需要，沉积过程和闪光回蚀工艺可循环重复。在某些其他实施例中，沉积工艺是选择性外延沉积工艺，其中生长发生在非氧化物区域中，但不在氧化物区域中发生。

2. 发明授权

US07238595B2 Epitaxial semiconductor deposition methods and structures 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US07238595B2
公开(公告)日：2007-07-03
申请号：US10800390
申请日：2004-03-12
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

3. 发明授权

US07402504B2 Epitaxial semiconductor deposition methods and structures 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US07402504B2
公开(公告)日：2008-07-22
申请号：US11506320
申请日：2006-08-18
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

4. 发明授权

US08530340B2 Epitaxial semiconductor deposition methods and structures 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US08530340B2
公开(公告)日：2013-09-10
申请号：US12556377
申请日：2009-09-09
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

5. 发明授权

US07682947B2 Epitaxial semiconductor deposition methods and structures 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US07682947B2
公开(公告)日：2010-03-23
申请号：US11755528
申请日：2007-05-30
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/20
CPC分类号： C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

6. 发明申请

US20100006024A1 EPITAXIAL SEMICONDUCTOR DEPOSITION METHODS AND STRUCTURES 有权
标题翻译：外延半导体沉积方法和结构
公开(公告)号：US20100006024A1
公开(公告)日：2010-01-14
申请号：US12556377
申请日：2009-09-09
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： C30B23/04
CPC分类号： C30B25/02 , C30B29/08 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/02532 , H01L21/0262
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.
摘要翻译：用于沉积诸如外延Ge和SiGe膜的外延膜的方法。在从高温加工冷却到含Ge层的较低沉积温度时，向基板提供Si或Ge化合物。导致平滑，薄，相对缺陷的Ge或SiGe层。还提供了轻松，高Ge含量种子层和上覆应变层之间的退化弛豫SiGe。

7. 发明授权

US07115521B2 Epitaxial semiconductor deposition methods and structures 有权
公开(公告)号：US07115521B2
公开(公告)日：2006-10-03
申请号：US10993024
申请日：2004-11-18
申请人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
发明人： Paul D. Brabant , Joseph P. Italiano , Chantal J. Arena , Pierre Tomasini , Ivo Raaijmakers , Matthias Bauer
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： C30B25/02 , C30B29/52 , H01L21/02381 , H01L21/0245 , H01L21/02502 , H01L21/0251 , H01L21/02532 , H01L21/02576 , H01L21/0262 , H01L21/02661
摘要： Methods for depositing epitaxial films such as epitaxial Ge and SiGe films. During cooling from high temperature processing to lower deposition temperatures for Ge-containing layers, Si or Ge compounds are provided to the substrate. Smooth, thin, relatively defect-free Ge or SiGe layers result. Retrograded relaxed SiGe is also provided between a relaxed, high Ge-content seed layer and an overlying strained layer.

8. 发明授权

US07396415B2 Apparatus and methods for isolating chemical vapor reactions at a substrate surface 有权
标题翻译：用于在衬底表面分离化学气相反应的装置和方法
公开(公告)号：US07396415B2
公开(公告)日：2008-07-08
申请号：US11144510
申请日：2005-06-02
申请人： Chantal J. Arena , Chris Werkhoven , Ron Bertram
发明人： Chantal J. Arena , Chris Werkhoven , Ron Bertram
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45504 , C23C16/45508 , C23C16/4584 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane. The angled flows of source gases have reduced interdiffusion volume above the substrate, preferably resulting in deposition substantially along a line extending across the center of the substrate. The substrate can be rotated during deposition to produce a substantially uniform film on the substrate.
摘要翻译：提供了一种用于处理衬底的设备和方法。该装置包括反应室，腔室内的衬底保持器以及第一和第二注射器部件。反应室具有上游端和下游端，衬底保持器定位在其之间。衬底保持器构造成支撑衬底，使得衬底在大致朝向上游端和下游端延伸的平面内。第一注射器部件位于腔室的上游端，并且构造成朝向由衬底保持器支撑的衬底上注入第一薄气帘。第一注射器部件被构造成大致沿着平行于基板的第一侧的第一平面注入第一帘幕。第二喷射器部件被构造成朝向基板的第一侧注入第二薄气帘。第二喷射器部件构造成大致沿着相对于第一平面成一角度定向的第二平面喷射第二气帘。源气体的倾斜流动减少了在基底上方的相互扩散体积，优选地导致基本上沿着延伸穿过基底中心的线进行沉积。衬底可以在沉积期间旋转以在衬底上产生基本均匀的膜。

9. 发明申请

US20080248200A1 APPARATUS AND METHODS FOR ISOLATING CHEMICAL VAPOR REACTIONS AT A SUBSTRATE SURFACE 审中-公开
标题翻译：在基板表面分离化学气相反应的装置和方法
公开(公告)号：US20080248200A1
公开(公告)日：2008-10-09
申请号：US12134585
申请日：2008-06-06
申请人： Chantal J. Arena , Chris Werkhoven , Ron Bertram
发明人： Chantal J. Arena , Chris Werkhoven , Ron Bertram
IPC分类号： C23C16/00
CPC分类号： C23C16/45514 , C23C16/303 , C23C16/452 , C23C16/45504 , C23C16/45508 , C23C16/4584 , C23C16/4585 , C23C16/46 , C23C16/52
摘要： An apparatus and method for processing a substrate is provided. The apparatus comprises a reaction chamber, a substrate holder within the chamber, and first and second injector components. The reaction chamber has an upstream end and a downstream end, between which the substrate holder is positioned. The substrate holder is configured to support a substrate so that the substrate is within a plane extending generally toward the upstream and downstream ends. The first injector component is at the upstream end of the chamber and is configured to inject a first thin gas curtain toward a substrate supported by the substrate holder. The first injector component is configured to inject the first curtain generally along a first plane that is parallel to a first side of the substrate. The second injector component is configured to inject a second thin gas curtain toward the first side of the substrate. The second injector component is configured to inject the second gas curtain generally along a second plane oriented at an angle with respect to the first plane. The angled flows of source gases have reduced interdiffusion volume above the substrate, preferably resulting in deposition substantially along a line extending across the center of the substrate. The substrate can be rotated during deposition to produce a substantially uniform film on the substrate.
摘要翻译：提供了一种用于处理衬底的设备和方法。该装置包括反应室，腔室内的衬底保持器以及第一和第二注射器部件。反应室具有上游端和下游端，衬底保持器定位在其之间。衬底保持器构造成支撑衬底，使得衬底在大致朝向上游端和下游端延伸的平面内。第一注射器部件位于腔室的上游端，并且构造成朝向由衬底保持器支撑的衬底上注入第一薄气帘。第一注射器部件被构造成大致沿着平行于基板的第一侧的第一平面注入第一帘幕。第二喷射器部件被构造成朝向基板的第一侧注入第二薄气帘。第二喷射器部件构造成大致沿着相对于第一平面成一角度定向的第二平面喷射第二气帘。源气体的倾斜流动减少了在基底上方的相互扩散体积，优选地导致基本上沿着延伸穿过基底中心的线进行沉积。衬底可以在沉积期间旋转以在衬底上产生基本均匀的膜。

10. 发明授权

US07625814B2 Filling deep features with conductors in semiconductor manufacturing 有权
标题翻译：在半导体制造中填充导体的深层特征
公开(公告)号：US07625814B2
公开(公告)日：2009-12-01
申请号：US11742302
申请日：2007-04-30
申请人： Ismail Emesh , Chantal J. Arena , Bulent M. Basol
发明人： Ismail Emesh , Chantal J. Arena , Bulent M. Basol
IPC分类号： H01L21/338 , H01L21/8234 , H01L21/8244 , H01L21/44
CPC分类号： H01L21/76898 , H01L21/288
摘要： A method of filling a conductive material in a three dimensional integration feature formed on a surface of a wafer is disclosed. The feature is optionally lined with dielectric and/or adhesion/barrier layers and then filled with a liquid mixture containing conductive precursor, such as a solution with dissolved ruthenium precursor or a dispersion or suspension with conductive particles (e.g., gold, silver, copper), and the substrate is rotated while the mixture is on its surface. Then, the liquid carrier is dried from the feature, leaving a conductive layer in the feature. These two steps are optionally repeated until the feature is filled up with the conductor. Then, the conductor is annealed in the feature, thereby forming a dense conductive plug in the feature.
摘要翻译：公开了一种在晶片表面形成的三维积分特征中填充导电材料的方法。该特征可选地包含电介质和/或粘附/阻挡层，然后填充含有导电前体的液体混合物，例如具有溶解的钌前体的溶液或具有导电颗粒（例如金，银，铜）的分散体或悬浮液，并且当混合物在其表面上时基板旋转。然后，从特征中干燥液体载体，在该特征中留下导电层。可选地重复这两个步骤，直到特征被导体填满。然后，导体在特征中退火，从而在该特征中形成致密的导电插塞。

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