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    • 1. 发明申请
    • CHEMICAL VAPOR DEPOSITION APPARATUS
    • 化学蒸气沉积装置
    • US20090288604A1
    • 2009-11-26
    • US12177037
    • 2008-07-21
    • Changsung Sean KimJong Pa HongJoong El Ghim
    • Changsung Sean KimJong Pa HongJoong El Ghim
    • C23C16/455C23C16/00C23C16/458
    • C23C16/45508C23C16/45512C23C16/45589
    • Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.
    • 提供了一种包括反应室的化学气相沉积设备; 设置在所述反应室中并具有安装在其上的多个晶片的感受体; 旋转所述基座的旋转驱动单元; 设置在反应室中的气体入口,并将反应气体从反应室的外部引入到反应室中; 设置在反应室中的气体出口,其从反应室内部沿着基座的旋转轴方向排出反应结束的反应气体; 以及可变气体流量调节单元,其设置在气体入口和气体出口之间,并且通过叠加多个具有多个孔的气体喷射板而形成。
    • 2. 发明授权
    • Chemical vapor deposition apparatus
    • 化学气相沉积装置
    • US07749326B2
    • 2010-07-06
    • US12177037
    • 2008-07-21
    • Chang Sung Sean KimJong Pa HongJoong El Ghim
    • Chang Sung Sean KimJong Pa HongJoong El Ghim
    • C23C16/455C23C16/458H01L21/306C23F1/00C23C16/06C23C16/22
    • C23C16/45508C23C16/45512C23C16/45589
    • Provided is a chemical vapor deposition apparatus including a reaction chamber; a susceptor that is provided in the reaction chamber and has a plurality of wafers mounted thereon; a rotation driving unit that rotates the susceptor; a gas inlet that is provided in the reaction chamber and introduces reaction gas into the reaction chamber from the outside of the reaction chamber; a gas outlet that is provided in the reaction chamber and discharges the reaction gas, of which the reaction is finished, from the inside of the reaction chamber along the rotation-axis direction of the susceptor; and a variable gas-flow adjusting unit that is provided between the gas inlet and the gas outlet and is formed by superimposing a plurality of gas jetting plates having a plurality of holes.
    • 提供了一种包括反应室的化学气相沉积设备; 设置在所述反应室中并具有安装在其上的多个晶片的感受体; 旋转所述基座的旋转驱动单元; 设置在反应室中的气体入口,并将反应气体从反应室的外部引入到反应室中; 设置在反应室中的气体出口,其从反应室内部沿着基座的旋转轴方向排出反应结束的反应气体; 以及可变气体流量调节单元,其设置在气体入口和气体出口之间,并且通过叠加多个具有多个孔的气体喷射板而形成。