专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20160284680A1 SEMICONDUCTOR DEVICES INCLUDING FIELD EFFECT TRANSISTORS 有权
标题翻译：包括场效应晶体管的半导体器件
公开(公告)号：US20160284680A1
公开(公告)日：2016-09-29
申请号：US15050607
申请日：2016-02-23
申请人： Changseop YOON , Junggun YOU , YoungJoon PARK , Jeonghyo LEE
发明人： Changseop YOON , Junggun YOU , YoungJoon PARK , Jeonghyo LEE
IPC分类号： H01L27/02 , H01L27/11 , H01L29/423 , H01L27/108 , H01L29/06
CPC分类号： H01L29/7846 , H01L21/76224 , H01L27/11807 , H01L29/0653 , H01L29/0673 , H01L29/4236 , H01L29/42376 , H01L29/66621 , H01L29/66659
摘要： A semiconductor device includes a first device isolation layer defining active regions spaced apart from each other along a first direction on a substrate, second device isolation layers defining a plurality of active patterns protruding from the substrate, the second device isolation layers extending in the first direction to be spaced apart from each other in a second direction and connected to the first device isolation layer, a gate structure extending in the second direction on the first device isolation layer between the active regions, a top surface of the second device isolation layer being lower than a top surface of the active pattern, a top surface of the first device isolation layer being higher than the top surface of the active pattern, and at least part of a bottom surface of the gate structure being higher than the top surface of the active pattern.
摘要翻译：半导体器件包括：第一器件隔离层，其限定沿着衬底上的第一方向彼此间隔开的有源区，第二器件隔离层限定从衬底突出的多个有源图案，第二器件隔离层沿第一方向延伸在第二方向上彼此间隔开并连接到第一器件隔离层，栅极结构在第一器件隔离层上的第二方向上延伸在有源区之间，第二器件隔离层的顶表面较低比活性图案的顶表面，第一器件隔离层的顶表面高于有源图案的顶表面，并且栅极结构的底表面的至少一部分高于活性图案的顶表面模式。

2. 发明申请

US20160315086A1 SEMICONDUCTOR DEVICE HAVING CONTACT PLUGS AND METHOD OF FORMING THE SAME 有权
标题翻译：具有接触片的半导体器件及其形成方法
公开(公告)号：US20160315086A1
公开(公告)日：2016-10-27
申请号：US15049721
申请日：2016-02-22
申请人： Changseop YOON , Sungmin KIM , Chiwon CHO
发明人： Changseop YOON , Sungmin KIM , Chiwon CHO
IPC分类号： H01L27/092 , H01L27/088 , H01L29/161 , H01L23/528 , H01L23/532
CPC分类号： H01L27/0924 , H01L21/823431 , H01L21/823475 , H01L21/823821 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L27/0886 , H01L27/1104 , H01L29/0653 , H01L29/165 , H01L29/41791 , H01L29/665
摘要： A semiconductor device including a first fin active area substantially parallel to a second fin active area, a first source/drain in the first fin active area, a second source/drain in the second fin active area, a first contact plug on the first source/drain, and a second contact plug on the second source/drain. The center of the second contact plug is offset from the center of the second source/drain.
摘要翻译：一种半导体器件，包括基本上平行于第二鳍片有源区域的第一鳍片活动区域，第一鳍片活动区域中的第一源极/漏极，第二鳍片活动区域中的第二源极/漏极，第一源极上的第一接触插塞漏极和第二个源极/漏极上的第二个接触插头。第二接触塞的中心偏离第二源极/漏极的中心。

3. 发明申请

US20160293546A1 Semiconductor Devices and Methods for Manufacturing the Same 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160293546A1
公开(公告)日：2016-10-06
申请号：US15082820
申请日：2016-03-28
申请人： Changseop YOON , Hyung Jong LEE , Boram IM
发明人： Changseop YOON , Hyung Jong LEE , Boram IM
IPC分类号： H01L23/528 , H01L23/532 , H01L29/165 , H01L29/161 , H01L29/16 , H01L23/535 , H01L29/78
CPC分类号： H01L23/5283 , H01L21/823871 , H01L23/53266 , H01L23/535 , H01L27/0207 , H01L29/165 , H01L29/7848 , H01L29/7851
摘要： The inventive concepts relate to a semiconductor device including a field effect transistor and a method for manufacturing the same. The semiconductor device includes a substrate including first and second source/drain regions formed thereon, a gate electrode intersecting the substrate between the first and second source/drain regions, and an active contact electrically connecting the first and second source/drain regions to each other. The active contact is spaced apart from the gate electrode. The active contact includes first sub-contacts provided on the first and second source/drain regions so as to be connected to the first and second source/drain regions, respectively, a second sub-contact provided on the first sub-contacts to electrically connect the first sub-contacts to each other, and a barrier layer provided between the second sub-contact and each of the first sub-contacts.
摘要翻译：本发明构思涉及包括场效应晶体管的半导体器件及其制造方法。半导体器件包括：衬底，其包括形成在其上的第一和第二源极/漏极区域;与第一和第二源极/漏极区域之间的衬底相交的栅电极;以及将第一和第二源极/漏极区域彼此电连接的有源触点。有源触点与栅电极间隔开。有源触点包括设置在第一和第二源极/漏极区上的第一子触点，以便分别连接到第一和第二源极/漏极区域，第二子触点设置在第一子触点上以电连接所述第一子接触彼此接触，以及设置在所述第二子接触件和每个所述第一子接触件之间的阻挡层。

4. 发明申请

US20160284697A1 SEMICONDUCTOR DEVICE 审中-公开
标题翻译：半导体器件
公开(公告)号：US20160284697A1
公开(公告)日：2016-09-29
申请号：US15053262
申请日：2016-02-25
申请人： Changseop YOON , Jayeol GOO , Sang Gil KIM
发明人： Changseop YOON , Jayeol GOO , Sang Gil KIM
IPC分类号： H01L27/088 , H01L29/08
CPC分类号： H01L27/088 , H01L21/823418 , H01L21/823456 , H01L21/823475 , H01L27/0886 , H01L27/092 , H01L27/0924 , H01L29/0847 , H01L29/4238 , H01L29/7848
摘要： A semiconductor device includes a plurality of active patterns protruding from a substrate, a gate structure intersecting the plurality of active patterns, a plurality of source/drain regions respectively on the plurality of active patterns at opposite sides of the gate structure, and source/drain contacts intersecting the plurality of active patterns, each of the source/drain contacts connected in common to the source/drain regions thereunder, each of the plurality of source/drain regions including a first portion in contact with a top surface of the active pattern thereunder, the first portion having a width substantially increasing as a distance from the substrate increases, and a second portion extending from the first portion, the second portion having a width substantially decreasing as a distance from the substrate increases, bottom surfaces of the source/drain contacts being lower than an interface between the first and second portions.
摘要翻译：半导体器件包括从衬底突出的多个有源图案，与多个有源图案相交的栅极结构，分别在栅极结构的相对侧的多个有源图案上的多个源极/漏极区域，以及源极/漏极触点与多个有源图形相交，每个源极/漏极触点共同连接到其下面的源极/漏极区域，多个源极/漏极区域中的每个源极/漏极区域包括与其下方的有源图案的顶表面接触的第一部分第一部分具有随着离开衬底的距离而显着增加的宽度增加，并且从第一部分延伸的第二部分具有与衬底的距离基本上减小的宽度增加，源极/漏极的底表面触点低于第一和第二部分之间的界面。

5. 发明申请

US20160293545A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160293545A1
公开(公告)日：2016-10-06
申请号：US15053182
申请日：2016-02-25
申请人： Changseop YOON , Kwangsub YOON , Jongmil YOUN , Hyung Jong LEE
发明人： Changseop YOON , Kwangsub YOON , Jongmil YOUN , Hyung Jong LEE
IPC分类号： H01L23/528 , H01L21/8238 , H01L27/092 , H01L29/06
CPC分类号： H01L23/5283 , H01L21/823871 , H01L23/485 , H01L27/0207 , H01L29/0653
摘要： A semiconductor device includes a substrate including PMOSFET and NMOSFET regions, a first gate structure extending in a first direction and crossing the PMOSFET and NMOSFET regions, and a gate contact on and connected to the first gate structure, the gate contact being between the PMOSFET and NMOSFET regions, the gate contact including a first sub contact in contact with a top surface of the first gate structure, the first sub contact including a vertical extending portion extending vertically toward the substrate along one sidewall of the first gate structure, and a second sub contact spaced apart from the first gate structure, a top surface of the second sub contact being positioned at a same level as a top surface of the first sub contact.
摘要翻译：半导体器件包括包括PMOSFET和NMOSFET区域的衬底，第一栅极结构，其在第一方向上延伸并且与PMOSFET和NMOSFET区域交叉，以及在第一栅极结构上并连接到第一栅极结构的栅极接触，栅极接触位于PMOSFET和 NMOSFET区域，栅极接触包括与第一栅极结构的顶表面接触的第一子接触，第一子接触包括沿着第一栅极结构的一个侧壁向衬底垂直延伸的垂直延伸部分，以及第二子接触件与第一栅极结构间隔开，第二子接触件的顶表面定位在与第一子接触件的顶表面相同的高度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式