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1. 发明申请

US20100197065A1 Piezo-Diode Cantilever MEMS Fabrication Method 有权
标题翻译：压电二极管悬臂MEMS制造方法
公开(公告)号：US20100197065A1
公开(公告)日：2010-08-05
申请号：US12758879
申请日：2010-04-13
申请人： Changqing Zhan , Paul J. Schuele , John F. Conley, JR. , John W. Hartzell
发明人： Changqing Zhan , Paul J. Schuele , John F. Conley, JR. , John W. Hartzell
IPC分类号： H01L21/329
CPC分类号： B81B3/0021 , H01L29/868
摘要： A piezo thin-film diode (piezo-diode) cantilever microelectromechanical system (MEMS) and associated fabrication processes are provided. The method deposits thin-films overlying a substrate. The substrate can be made of glass, polymer, quartz, metal foil, Si, sapphire, ceramic, or compound semiconductor materials. Amorphous silicon (a-Si), polycrystalline Si (poly-Si), oxides, a-Site, poly-SiGe, metals, metal-containing compounds, nitrides, polymers, ceramic films, magnetic films, and compound semiconductor materials are some examples of thin-film materials. A cantilever beam is formed from the thin-films, and a diode is embedded with the cantilever beam. The diode is made from a thin-film shared in common with the cantilever beam. The shared thin-film may a film overlying a cantilever beam top surface, a thin-film overlying a cantilever beam bottom surface, or a thin-film embedded within the cantilever beam.
摘要翻译：提供压电薄膜二极管（压电二极管）悬臂微机电系统（MEMS）及相关制造工艺。该方法沉积覆盖在基底上的薄膜。基板可以由玻璃，聚合物，石英，金属箔，Si，蓝宝石，陶瓷或化合物半导体材料制成。非晶硅（a-Si），多晶Si（poly-Si），氧化物，a-SiGe，poly-SiGe，金属，含金属的化合物，氮化物，聚合物，陶瓷膜，磁性膜和化合物半导体材料是一些例子的薄膜材料。悬臂梁由薄膜形成，二极管嵌入悬臂梁。二极管由与悬臂梁共用的薄膜制成。共享的薄膜可以是覆盖悬臂梁顶表面的薄膜，覆盖悬臂梁底表面的薄膜或嵌入在悬臂梁内的薄膜。

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