专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130208379A1 ELECTROSTATIC DISCHARGE PROTECTION APPARATUS 有权
标题翻译：静电放电保护装置
公开(公告)号：US20130208379A1
公开(公告)日：2013-08-15
申请号：US13369455
申请日：2012-02-09
申请人： Chang-Tzu WANG , Tien-Hao TANG , Kuan-Cheng SU
发明人： Chang-Tzu WANG , Tien-Hao TANG , Kuan-Cheng SU
IPC分类号： H02H9/04
CPC分类号： H01L27/0262 , H01L29/7436 , H01L29/87
摘要： A semiconductor ESD protection apparatus comprises a substrate; a first doped well disposed in the substrate and having a first conductivity; a first doped area having the first conductivity disposed in the first doped well; a second doped area having a second conductivity disposed in the first doped well; and an epitaxial layer disposed in the substrate, wherein the epitaxial layer has a third doped area with the first conductivity and a fourth doped area with the second conductivity separated from each other. Whereby a first bipolar junction transistor (BJT) equivalent circuit is formed between the first doped area, the first doped well and the third doped area; a second BJT equivalent circuit is formed between the second doped area, the first doped well and the fourth doped area; and the first BJT equivalent circuit and the second BJT equivalent circuit have different majority carriers.
摘要翻译：半导体ESD保护装置包括基板; 第一掺杂阱，其设置在所述衬底中并且具有第一导电性; 具有第一导电性的第一掺杂区域设置在第一掺杂阱中; 第二掺杂区域，具有设置在第一掺杂阱中的第二导电体; 以及设置在所述衬底中的外延层，其中所述外延层具有具有第一导电性的第三掺杂区域和具有第二导电性的第四掺杂区域彼此分离。由此在第一掺杂区，第一掺杂阱和第三掺杂区之间形成第一双极结型晶体管（BJT）等效电路; 在第二掺杂区，第一掺杂阱和第四掺杂区之间形成第二BJT等效电路; 并且第一BJT等效电路和第二BJT等效电路具有不同的多数载波。

IPRDB

热门服务

关于我们

友情链接

联系方式