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    • 3. 发明授权
    • Semiconductor memory device having improved local input/output line precharge scheme
    • 具有改进的本地输入/输出线预充电方案的半导体存储器件
    • US08213248B2
    • 2012-07-03
    • US12659328
    • 2010-03-04
    • Jong-Ho MoonSeong-Jin Jang
    • Jong-Ho MoonSeong-Jin Jang
    • G11C7/00
    • G11C7/1048G11C11/4096
    • A data path circuit of a semiconductor memory device includes: a bit line sense amplifier driven by a first power supply voltage; a local input/output line sense amplifier; a column selecting unit operatively connecting a pair of bit lines connected to the bit line sense amplifier and a pair of local input/output lines connected to the local input/output line sense amplifier in response to a column selection signal; and a local input/output line precharge unit precharging the pair of local input/output lines with a second power supply voltage different from the first power supply voltage during a period for which the column selection signal is in an inactive state.
    • 半导体存储器件的数据路径电路包括:由第一电源电压驱动的位线读出放大器; 本地输入/输出线路读出放大器; 列选择单元,可操作地连接连接到位线读出放大器的一对位线和响应于列选择信号连接到本地输入/输出线读出放大器的一对本地输入/输出线; 以及本地输入/输出线预充电单元,在列选择信号处于非活动状态的期间,用与第一电源电压不同的第二电源电压对一对本地输入/输出线进行预充电。
    • 4. 发明申请
    • Semiconductor memory device having improved local input/output line precharge scheme
    • 具有改进的本地输入/输出线预充电方案的半导体存储器件
    • US20100226192A1
    • 2010-09-09
    • US12659328
    • 2010-03-04
    • Jong-Ho MoonSeong-Jin Jang
    • Jong-Ho MoonSeong-Jin Jang
    • G11C7/00
    • G11C7/1048G11C11/4096
    • A data path circuit of a semiconductor memory device includes: a bit line sense amplifier driven by a first power supply voltage; a local input/output line sense amplifier; a column selecting unit operatively connecting a pair of bit lines connected to the bit line sense amplifier and a pair of local input/output lines connected to the local input/output line sense amplifier in response to a column selection signal; and a local input/output line precharge unit precharging the pair of local input/output lines with a second power supply voltage different from the first power supply voltage during a period for which the column selection signal is in an inactive state.
    • 半导体存储器件的数据路径电路包括:由第一电源电压驱动的位线读出放大器; 本地输入/输出线路读出放大器; 列选择单元,可操作地连接连接到位线读出放大器的一对位线和响应于列选择信号连接到本地输入/输出线读出放大器的一对本地输入/输出线; 以及本地输入/输出线预充电单元,在列选择信号处于非活动状态的期间,用与第一电源电压不同的第二电源电压对一对本地输入/输出线进行预充电。