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    • 1. 发明授权
    • Semiconductor device having voltage regulator
    • 具有电压调节器的半导体器件
    • US08289073B2
    • 2012-10-16
    • US12759942
    • 2010-04-14
    • Chang-Ju LeeHyoung-Rae KimSan-Ho Byun
    • Chang-Ju LeeHyoung-Rae KimSan-Ho Byun
    • G05F1/10G05F3/02
    • G05F1/46H03F1/303H03F3/45475H03F2203/45528H03F2203/45534
    • A semiconductor device includes a voltage regulator. The device includes an operational amplifier configured to compare an input voltage with a feedback voltage and output an output voltage, an up-resistor connected between an output of the operational amplifier and a first node, a down-resistor connected between a second node and a ground voltage terminal, and a switching unit including a fuse box connected between a third node outputting the feedback voltage and a fourth node having a variable resistance value, and configured to connect the first node with the fourth node and the second node with the third node, or connect the first node with the third node and the second node with the fourth node.
    • 半导体器件包括电压调节器。 该装置包括:运算放大器,被配置为将输入电压与反馈电压进行比较并输出输出电压;连接在运算放大器的输出端与第一节点之间的上拉电阻,连接在第二节点和第二节点之间的下拉电阻; 接地电压端子和包括连接在输出反馈电压的第三节点和具有可变电阻值的第四节点之间的保险丝盒的开关单元,并且被配置为将第一节点与第四节点和第二节点与第三节点 ,或者将第一节点与第三节点和第二节点连接到第四节点。
    • 2. 发明申请
    • SEMICONDUCTOR DEVICE HAVING VOLTAGE REGULATOR
    • 具有电压调节器的半导体器件
    • US20100295522A1
    • 2010-11-25
    • US12759942
    • 2010-04-14
    • Chang-Ju LeeHyoung-Rae KimSan-Ho Byun
    • Chang-Ju LeeHyoung-Rae KimSan-Ho Byun
    • G05F1/10
    • G05F1/46H03F1/303H03F3/45475H03F2203/45528H03F2203/45534
    • A semiconductor device includes a voltage regulator. The device includes an operational amplifier configured to compare an input voltage with a feedback voltage and output an output voltage, an up-resistor connected between an output of the operational amplifier and a first node, a down-resistor connected between a second node and a ground voltage terminal, and a switching unit including a fuse box connected between a third node outputting the feedback voltage and a fourth node having a variable resistance value, and configured to connect the first node with the fourth node and the second node with the third node, or connect the first node with the third node and the second node with the fourth node.
    • 半导体器件包括电压调节器。 该装置包括:运算放大器,被配置为将输入电压与反馈电压进行比较并输出输出电压;连接在运算放大器的输出端与第一节点之间的上拉电阻,连接在第二节点和第二节点之间的下拉电阻; 接地电压端子和包括连接在输出反馈电压的第三节点和具有可变电阻值的第四节点之间的保险丝盒的开关单元,并且被配置为将第一节点与第四节点和第二节点与第三节点 ,或者将第一节点与第三节点和第二节点连接到第四节点。
    • 3. 发明申请
    • LEVEL SHIFTER CAPABLE OF HIGH SPEED OPERATION AND HIGH-SPEED LEVEL SHIFTING METHOD
    • 具有高速运行和高速移位方式的液位变送器
    • US20080191777A1
    • 2008-08-14
    • US11832713
    • 2007-08-02
    • Chang-Ju LeeKwang Ho Choi
    • Chang-Ju LeeKwang Ho Choi
    • H03L5/00
    • H03K3/012H03K3/35613
    • A level shifter capable of high speed operation and a high-speed level shifting method. The level shifter includes a pull-down switching unit configured to selectively connect a first node and a second node with a first power supply (ground) voltage in response to a first switching signal and a (complementary) second switching signal, a pull-up switching unit connected between the first node and the second node and configured to connect the first node with a second power supply voltage in response to the voltage level of the second node and to connect the second node with the second power supply voltage in response to the voltage level of the first node, and a internodal switch configured to selectively connect the first node with the second node in response to a control signal. Due to the switching operation and resistance of the internodal switch, the level shifter can reduce power consumption and perform high speed level-shifting operation.
    • 能够高速运转的电平移位器和高速电平转换方法。 电平移位器包括下拉开关单元,其被配置为响应于第一开关信号和(互补的)第二开关信号,上拉选择性地连接具有第一电源(接地)电压的第一节点和第二节点 开关单元连接在第一节点和第二节点之间,并且被配置为响应于第二节点的电压电平而将第一节点与第二电源电压连接,并响应于第二节点连接第二节点与第二电源电压 第一节点的电压电平和配置成响应于控制信号选择性地将第一节点与第二节点连接的节间开关。 由于节间开关的开关操作和电阻,电平转换器可以降低功耗并执行高速电平转换操作。