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    • 5. 发明授权
    • Plasma processing apparatus
    • 等离子体处理装置
    • US08138444B2
    • 2012-03-20
    • US12143465
    • 2008-06-20
    • Sung Ryul Kim
    • Sung Ryul Kim
    • B23K10/00
    • H01L21/67069H01L21/67265
    • Provided is a plasma processing apparatus including a chamber, a lower electrode, an upper electrode, and a substrate sensor. The chamber is configured to provide a reaction space. The lower electrode is disposed at a lower region in the chamber to mount a substrate thereon. The upper electrode is disposed at an upper region in the chamber to be opposite to the lower electrode. The substrate sensor is provided on the chamber to sense the substrate. Herein, the upper electrode includes an electrode plate and an insulating plate attached on the bottom of the electrode plate, and at least one guide hole is formed in the upper electrode to guide light output from the substrate sensor toward the substrate.
    • 提供了一种包括室,下电极,上电极和基板传感器的等离子体处理装置。 腔室被配置成提供反应空间。 下电极设置在腔室中的下部区域以在其上安装衬底。 上部电极设置在室中的与下部电极相对的上部区域。 衬底传感器设置在腔室上以感测衬底。 这里,上电极包括安装在电极板的底部的电极板和绝缘板,并且在上电极中形成至少一个引导孔,以将从基板传感器输出的光引向基板。
    • 9. 发明授权
    • Flash memory device and method for manufacturing the same
    • 闪存装置及其制造方法
    • US06239009B1
    • 2001-05-29
    • US09409677
    • 1999-09-30
    • Jong Moo ChoiSung Ryul KimYoung Keun Park
    • Jong Moo ChoiSung Ryul KimYoung Keun Park
    • H01L213205
    • H01L27/11521H01L27/115H01L29/66825
    • A flash memory device has improved erasable characteristics and device reliability. The flash memory device includes a semiconductor substrate and heavily doped impurity regions formed spaced apart from one another by a predetermined distance in the semiconductor substrate in a first direction. First and second isolation regions are formed spaced apart from each other by a second predetermined distance on the semiconductor substrate, in a second direction which is preferably at a right angle to the first direction. Each of the floating gates are formed between the first and second isolation regons and between the heavily doped impurity regions. The control gate lines are formed between the first and second isolation regions, and over the floating gates in the same direction as the first and second isolation regions. An erase gate line is formed to have a narrower width than the floating gate, and is formed over the floating gate, preferably at a right angle to the control gate line.
    • 闪存器件具有改进的可擦除特性和器件可靠性。 闪速存储器件包括在第一方向上在半导体衬底中彼此间隔开预定距离形成的半导体衬底和重掺杂杂质区。 第一隔离区域和第二隔离区域在第二方向上在半导体衬底上彼此间隔开第二预定距离,优选地与第一方向成直角。 每个浮置栅极形成在第一和第二隔离晶体之间以及重掺杂杂质区之间。 控制栅极线形成在第一和第二隔离区域之间,并且在与第一和第二隔离区域相同的方向上在浮动栅极上形成。 擦除栅极线形成为具有比浮动栅极窄的宽度,并且形成在浮动栅极上,优选地与控制栅极线成直角。
    • 10. 发明授权
    • Method for testing photoinduced domain switching of ferroelectric ceramics using acoustic emission
    • 使用声发射测试铁电陶瓷的光诱导畴切换的方法
    • US06227052B1
    • 2001-05-08
    • US09340063
    • 1999-06-25
    • Si Kyung ChoiDong Gu ChoiSung Ryul Kim
    • Si Kyung ChoiDong Gu ChoiSung Ryul Kim
    • G01N2904
    • G01N29/42G01N29/2418G01N29/40G01N2291/015
    • Disclosed is a method for testing the photoinduced domain switching of ferroelectric ceramics using AE. A ferroelectric ceramic specimen 4 was tested for the AE signal and photovoltaic current upon application of light. Light emanating from a xenon lamp 1 is focused into a specimen 4 through a waveguide 2 and a lens 3. Raw AE signals are detected through an AE sensor 5. The output signals from the AE sensor 5 are forwarded to a bandpass filter 7 which filtered the signals. Then, the AE signals are amplified by 40 dB by a pre-amplifier 8 and further by 30 dB by an AET 5500 system 10 which is connected to a computer 9 for analyzing the signals. The AE events which show a peak amplitude greater than or as great as a predetermined threshold voltage are counted with respect to an irradiation period of time, followed by calculating an occurrence rate of the AE event counts. From these data, the activity of the photoinduced domain switching can be qualitatively evaluated. The energy of the AE signals is calculated from the formula: AE Energy(dB)=Peak Amplitude(dB)+10 log Duration Time(&mgr;s), so as to recognize the distributions of the energy. By investigating the types of domain switching which exist in the energy distributions, to which types of domain switching the AE signals are attributed can be determined.
    • 公开了一种使用AE测试铁电陶瓷的光诱导畴切换的方法。 在施加光时对铁电陶瓷样品4进行AE信号和光电流测试。 从氙灯1发出的光通过波导2和透镜3聚焦到样本4中。通过AE传感器5检测原始AE信号。来自AE传感器5的输出信号被转发到过滤的带通滤波器7 信号。 然后,通过AET 5500系统10将AE信号由前置放大器8放大40dB,进一步放大30dB,AET 5500系统10连接到用于分析信号的计算机9。 相对于照射时间段,计算显示大于或等于预定阈值电压的峰值幅度的AE事件,随后计算AE事件计数的发生率。 从这些数据可以定性地评估光诱导域切换的活动。 AE信号的能量由以下公式计算:AE能量(dB)=峰值幅度(dB)+10log持续时间(mus),以便识别能量的分布。 通过调查存在于能量分布中的域切换的类型,可以确定归属哪些类型的域切换AE信号。