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1. 发明授权

US07728356B2 P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistor 有权
标题翻译： P-GaN / AlGaN / AlN / GaN增强型场效应晶体管
公开(公告)号：US07728356B2
公开(公告)日：2010-06-01
申请号：US12131704
申请日：2008-06-02
申请人： Chang Soo Suh , Umesh K. Mishra
发明人： Chang Soo Suh , Umesh K. Mishra
IPC分类号： H01L29/778
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/432 , H01L29/66462
摘要： An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.
摘要翻译：一种增强型高电子迁移率晶体管（HEMT），其包括在HEMT的栅极和沟道之间的p型氮化物层，用于减少栅极下的电子群。 HEMT还可以在AlGaN层和HEMT的缓冲层之间包含氮化铝（AlN）层，以降低通道的导通电阻。

2. 发明授权

US07948011B2 N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistor 有权
标题翻译：氮化镓氮化镓/氮化镓增强型场效应晶体管
公开(公告)号：US07948011B2
公开(公告)日：2011-05-24
申请号：US11523286
申请日：2006-09-18
申请人： Siddharth Rajan , Chang Soo Suh , James S. Speck , Umesh K. Mishra
发明人： Siddharth Rajan , Chang Soo Suh , James S. Speck , Umesh K. Mishra
IPC分类号： H01L29/66
CPC分类号： H01L29/045 , H01L29/2003 , H01L29/432 , H01L29/7781 , H01L29/7783 , H01L29/7784
摘要： A novel enhancement mode field effect transistor (FET), such as a High Electron Mobility Transistors (HEMT), has an N-polar surface uses polarization fields to reduce the electron population under the gate in the N-polar orientation, has improved dispersion suppression, and low gate leakage.
摘要翻译：一种新型的增强型场效应晶体管（FET），例如高电子迁移率晶体管（HEMT），具有N-极性表面，利用极化场来减小N极方向栅极下的电子群，改善色散抑制，低栅极泄漏。

3. 发明申请

US20090085065A1 METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL 审中-公开
标题翻译：使用波形焊接和基板去除在III面形成的层的N面上制造III-N半导体器件的方法
公开(公告)号：US20090085065A1
公开(公告)日：2009-04-02
申请号：US12059907
申请日：2008-03-31
申请人： Umesh K. Mishra , Lee S. McCarthy , Chang Soo Suh , Siddharth Rajan
发明人： Umesh K. Mishra , Lee S. McCarthy , Chang Soo Suh , Siddharth Rajan
IPC分类号： H01L29/778 , H01L21/18 , H01L21/20
CPC分类号： H01L29/66462 , H01L21/187 , H01L29/045 , H01L29/2003 , H01L29/7783
摘要： A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the III-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III-nitride semiconductor device structure. An N-polar (000-1) oriented III-nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group III-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group III-faces.
摘要翻译：一种用于在层的N面上制造III-N半导体器件的方法，包括（a）在衬底上生长Ga极性方向上的III族氮化物半导体器件结构，（b）将III族氮化物的Ga面半导体器件结构，以及（c）去除衬底以露出III族氮化物半导体器件结构的N面。还公开了一种N极（000-1）取向的III族氮化物半导体器件，其包括一个或多个（000-1）取向的氮化物层，每个具有与III族面相反的N面，其中至少一个N 表面是至少部分暴露的N面，以及附着到III组面中的一个的主体衬底。

4. 发明申请

US20090038225A1 APPARATUS FOR PREVENTING VEHICLE TRAY FROM BEING OPENED BY INERTIA LOAD 失效
标题翻译：用于防止车载托盘从装置开启的装置
公开(公告)号：US20090038225A1
公开(公告)日：2009-02-12
申请号：US11942567
申请日：2007-11-19
申请人： Chang Soo Suh
发明人： Chang Soo Suh
IPC分类号： E05F1/08
CPC分类号： B60R7/06 , E05B77/06 , E05D11/1007 , E05Y2900/538 , Y10S292/22
摘要： An apparatus for preventing a lid from being undesirably opened. The lid is rotatably coupled to a vehicle tray. The apparatus includes a spring provided under the vehicle tray; and a stopper provided under the vehicle tray. The stopper is coupled at one end to the spring, so that, when a force greater than a predetermined force is applied to the stopper in a direction away from the spring, the stopper overcomes the elastic force of the spring and slides to a position at which it prevents the lid from opening. One-way sliding sawteeth are provided on a lower surface of the vehicle tray and on an upper surface of the stopper. The sawteeth engage with each other when the stopper slides to the position at which it prevents the lid from opening, such that the stopper is prevented from returning to its original position.
摘要翻译：一种用于防止盖不期望地打开的装置。盖可旋转地联接到车辆托盘。该装置包括设置在车辆托盘下方的弹簧; 以及设置在车辆托盘下方的止动件。止动器的一端连接到弹簧，使得当大于预定的力的力沿着远离弹簧的方向施加到止动件上时，止动器克服弹簧的弹力并滑动到这防止盖子打开。单向滑动锯条设置在车辆托盘的下表面和止动件的上表面上。当止动件滑动到防止盖打开的位置时，锯齿彼此接合，从而防止止动件返回到其初始位置。

5. 发明申请

US20100255646A1 III-NITRIDE DEVICES WITH RECESSED GATES 有权
标题翻译：具有接收器门的III-NITRIDE器件
公开(公告)号：US20100255646A1
公开(公告)日：2010-10-07
申请号：US12816971
申请日：2010-06-16
申请人： Chang Soo Suh , Ilan Ben-Yaacov
发明人： Chang Soo Suh , Ilan Ben-Yaacov
IPC分类号： H01L21/335
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236
摘要： III-nitride devices are described with recessed gates. In some embodiments, the material around the gates is formed by epitaxially depositing different III-nitride layers on a substrate and etching through at least the top two layers in the gate region. Because adjacent layers in the top three layers of the structure have different compositions, some of the layers act as etch stops to allow for precision etching. In some embodiments, a regrowth mask is used to prevent growth of material in the gate region. A gate electrode is deposited in the recess.
摘要翻译： III型氮化物器件用凹入栅极描述。在一些实施例中，围绕栅极的材料通过在衬底上外延沉积不同的III族氮化物层并且蚀刻至少栅极区域中的顶部两层来形成。因为结构的顶部三层中的相邻层具有不同的组成，所以一些层用作蚀刻停止以允许精密蚀刻。在一些实施例中，再生长掩模用于防止栅极区域中材料的生长。栅电极沉积在凹槽中。

6. 发明申请

US20100038814A1 Method for Manufacturing Interior Panel of Motor Vehicle 审中-公开
标题翻译：汽车内部面板制造方法
公开(公告)号：US20100038814A1
公开(公告)日：2010-02-18
申请号：US12349283
申请日：2009-01-06
申请人： Chang Soo Suh
发明人： Chang Soo Suh
IPC分类号： B29C45/14
CPC分类号： B29C45/1418 , B29C45/1639 , B29C45/1671 , B29C51/10 , B29C2045/14868 , B29C2045/14909 , B29C2791/001 , B29L2031/3005 , B29L2031/3041
摘要： A method of manufacturing a product may include a step of forming an end of a film in a hook shape corresponding to one side cavity of an upper mold, a step of removing an unnecessary portion of the film, a step of inserting the film into the one side cavity in a state that a side having the hook shape in the film is disposed at an inner surface of the upper mold, a step of injecting injection liquid into the one side cavity in a state that the one side cavity is partitioned from the other side cavity of the upper mold, a step of injecting injection liquid into the other side cavity, a step of filling a partitioning portion formed between the one side cavity and the other side cavity to form an injection-molded body, and a step of extracting the injection-molded body.
摘要翻译：制造产品的方法可以包括形成与上模的一个侧腔相对应的钩形的膜的端部，除去膜的不需要部分的步骤，将膜插入到在膜的内表面设置具有钩状的一侧的状态下的一侧空腔，在一侧空腔与上侧模具隔开的状态下将注入液注入到一侧空腔的工序上模具的另一侧腔，将注射液注入另一侧腔的步骤，填充形成在一个侧腔和另一侧腔之间的分隔部分以形成注射成型体的步骤，以及步骤提取注塑体。

7. 发明授权

US07571948B2 Apparatus for preventing vehicle tray from being opened by inertia load 失效
标题翻译：用于防止车辆托盘被惯性载荷打开的装置
公开(公告)号：US07571948B2
公开(公告)日：2009-08-11
申请号：US11942567
申请日：2007-11-29
申请人： Chang Soo Suh
发明人： Chang Soo Suh
IPC分类号： B60N3/12 , E05B15/02
CPC分类号： B60R7/06 , E05B77/06 , E05D11/1007 , E05Y2900/538 , Y10S292/22
摘要： An apparatus for preventing a lid from being undesirably opened. The lid is rotatably coupled to a vehicle tray. The apparatus includes a spring provided under the vehicle tray; and a stopper provided under the vehicle tray. The stopper is coupled at one end to the spring, so that, when a force greater than a predetermined force is applied to the stopper in a direction away from the spring, the stopper overcomes the elastic force of the spring and slides to a position at which it prevents the lid from opening. One-way sliding sawteeth are provided on a lower surface of the vehicle tray and on an upper surface of the stopper. The sawteeth engage with each other when the stopper slides to the position at which it prevents the lid from opening, such that the stopper is prevented from returning to its original position.
摘要翻译：一种用于防止盖不期望地打开的装置。盖可旋转地联接到车辆托盘。该装置包括设置在车辆托盘下方的弹簧; 以及设置在车辆托盘下方的止动件。止动器的一端连接到弹簧，使得当大于预定的力的力沿着远离弹簧的方向施加到止动件上时，止动器克服弹簧的弹力并滑动到这防止盖子打开。单向滑动锯条设置在车辆托盘的下表面和止动件的上表面上。当止动件滑动到防止盖打开的位置时，锯齿彼此接合，从而防止止动件返回到其初始位置。

8. 发明申请

US20090146185A1 INSULATED GATE E-MODE TRANSISTORS 有权
标题翻译：绝缘栅型晶体管
公开(公告)号：US20090146185A1
公开(公告)日：2009-06-11
申请号：US12324574
申请日：2008-11-26
申请人： Chang Soo Suh , Ilan Ben-Yaacov , Robert Coffie , Umesh Mishra
发明人： Chang Soo Suh , Ilan Ben-Yaacov , Robert Coffie , Umesh Mishra
IPC分类号： H01L27/088 , H01L29/06
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/42364 , H01L29/517 , H01L29/7781
摘要： Enhancement-mode III-nitride transistors are described that have a large source to drain barrier in the off state, low off state leakage, and low channel resistance in the access regions are described. The devices can include a charge depleting layer under the gate and/or a charge enhancing layer outside of the gate region, that is, in the access region.
摘要翻译：描述了增强型III族氮化物晶体管，其在断开状态下具有大的源极到漏极阻挡层，低关断状态泄漏以及在接近区域中的低通道电阻。这些器件可以包括在栅极区域外的栅极下面的电荷消耗层和/或电荷增强层，即在存取区域中的电荷增强层。

9. 发明申请

US20080308813A1 HIGH BREAKDOWN ENHANCEMENT MODE GALLIUM NITRIDE BASED HIGH ELECTRON MOBILITY TRANSISTORS WITH INTEGRATED SLANT FIELD PLATE 审中-公开
标题翻译：具有集成的SLANT现场板的高突变增强型基于氮化镓的高电子移动晶体管
公开(公告)号：US20080308813A1
公开(公告)日：2008-12-18
申请号：US11841476
申请日：2007-08-20
申请人： Chang Soo Suh , Yuvaraj Dora , Umesh K. Mishra
发明人： Chang Soo Suh , Yuvaraj Dora , Umesh K. Mishra
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/402 , H01L29/42316 , H01L29/66462
摘要： High breakdown enhancement mode gallium nitride (GaN) based high electron mobility transistors (HEMTs) with integrated slant field plates. These HEMTs have an epilayer structure comprised of AlGaN/GaN buffer. Before the formation of the gate electrode, a passivation layer is deposited, and then the opening for the gate is patterned. The passivation layer below the gate is etched using an etch condition that creates a slanted sidewalls. Then, the charge below the channel is removed either by Fluorine-based plasma treatment and/or by a recess etch. The gate metal is deposited with an angled rotation to form a gate structure with an inherent field plate with rounded edges.
摘要翻译：具有集成倾斜场板的高击穿增强型氮化镓（GaN）基高电子迁移率晶体管（HEMT）。这些HEMT具有由AlGaN / GaN缓冲层构成的外延层结构。在形成栅电极之前，沉积钝化层，然后对栅极的开口进行图案化。使用产生倾斜侧壁的蚀刻条件蚀刻栅极下方的钝化层。然后，通过氟基等离子体处理和/或通过凹陷蚀刻除去通道下面的电荷。栅极金属以成角度的旋转沉积以形成具有带有圆形边缘的固有场板的栅极结构。

10. 发明申请

US20080296618A1 P-GaN/AlGaN/AlN/GaN ENHANCEMENT-MODE FIELD EFFECT TRANSISTOR 有权
标题翻译： P-GaN / AlGaN / AlN / GaN增强型场效应晶体管
公开(公告)号：US20080296618A1
公开(公告)日：2008-12-04
申请号：US12131704
申请日：2008-06-02
申请人： Chang Soo Suh , Umesh K. Mishra
发明人： Chang Soo Suh , Umesh K. Mishra
IPC分类号： H01L29/778 , H01L21/338
CPC分类号： H01L29/7786 , H01L29/1066 , H01L29/2003 , H01L29/42316 , H01L29/432 , H01L29/66462
摘要： An enhancement mode High Electron Mobility Transistor (HEMT) comprising a p-type nitride layer between the gate and a channel of the HEMT, for reducing an electron population under the gate. The HEMT may also comprise an Aluminum Nitride (AlN) layer between an AlGaN layer and buffer layer of the HEMT to reduce an on resistance of a channel.
摘要翻译：一种增强型高电子迁移率晶体管（HEMT），其包括在HEMT的栅极和沟道之间的p型氮化物层，用于减少栅极下的电子群。 HEMT还可以在AlGaN层和HEMT的缓冲层之间包含氮化铝（AlN）层，以降低通道的导通电阻。

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