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1. 发明申请

US20070133270A1 Phase-change random access memory device and method of operating the same 有权
标题翻译：相变随机存取存储器件及其操作方法
公开(公告)号：US20070133270A1
公开(公告)日：2007-06-14
申请号：US11515422
申请日：2006-09-05
申请人： Chang Jeong , Su-Youn Lee , Won-Cheol Jeong , Jae-Hyun Park , Su-Jin Ahn , Fai Yeung
发明人： Chang Jeong , Su-Youn Lee , Won-Cheol Jeong , Jae-Hyun Park , Su-Jin Ahn , Fai Yeung
IPC分类号： G11C11/00
CPC分类号： G11C11/5678 , G11C13/0004 , G11C2213/79
摘要： A phase-change random access memory device may include a phase-change pattern, a first electrode structure connected to the phase-change pattern, and a second electrode structure spaced apart from the first electrode structure and connected to the phase-change pattern, wherein at least one of the first electrode structure and the second electrode structure includes a plurality of resistor patterns connected to the phase-change pattern in parallel.
摘要翻译：相变随机存取存储器件可以包括相变图案，连接到相变图案的第一电极结构和与第一电极结构间隔开并连接到相变图案的第二电极结构，其中第一电极结构和第二电极结构中的至少一个包括并联连接到相变图案的多个电阻图案。

2. 发明申请

US20070113593A1 Functional compression socks 失效
标题翻译：功能性压缩袜
公开(公告)号：US20070113593A1
公开(公告)日：2007-05-24
申请号：US10584832
申请日：2004-12-30
申请人： Chang Jeong
发明人： Chang Jeong
IPC分类号： D04B1/26
CPC分类号： A61F13/08 , A41B11/00 , A41B2400/60 , D04B1/02 , D04B1/102 , D04B1/265
摘要： This invention relates to functional socks which provide appropriate and variable compression on the various parts of foot. The functional compressive socks of this invention comprise the parts including shin, calf, instep, toe, heel, and sole. The said socks are characterized by the fact that all those said parts are subject to appropriate compression by part, and in addition, the said parts of shin, calf, instep, and sole are knitted with high elasticity yarn as the elastic threads and the core yarn single covered with polyurethane based long staple or long staple copolymer fiber as the inner threads, while the said parts of toe and heel are knitted with the core yarn single covered with polyurethane based long staple or long staple copolymer fiber as the inner threads, in appropriate ratio set respectively by the characteristics of the part. According to this invention which utilizes high elasticity yarn and implements a multi-stage compressive knitting technology that can adjust the lateral tensile force of the elastic threads, the blood in foot is pressed bilaterally promoting the circulation, therefore, the socks which can prevent or even treat the varix or edema can be produced.
摘要翻译：本发明涉及对足部各部分提供适当和可变压缩的功能性袜子。本发明的功能性压缩袜包括包括胫骨，小腿，脚背，脚趾，跟部和鞋底的部分。所述袜子的特征在于，所有这些部件都被部分适当的压缩，另外，所述的胫部，小腿，脚背和鞋底的部分用高弹力纱线作为弹性线和芯部纱线以聚氨酯为主的长纤维或长纤维共聚物纤维作为内螺纹覆盖，而趾部和鞋跟的所述部分用单一覆盖有聚氨酯基长纤维或长纤维共聚物纤维作为内螺纹的芯纱编织，适当比例设置分别由该部分的特点。根据本发明，利用高弹力纱线，实现能够调节弹性线的横向张力的多级压缩编织技术，使脚中的血液双向促进循环，从而可以防止或甚至发生袜子治疗静脉曲张或浮肿可以产生。

3. 发明申请

US20060151790A1 Thin film transistor 审中-公开
标题翻译：薄膜晶体管
公开(公告)号：US20060151790A1
公开(公告)日：2006-07-13
申请号：US11327384
申请日：2006-01-09
申请人： Tae Kang , Chang Jeong , Won Kwak
发明人： Tae Kang , Chang Jeong , Won Kwak
IPC分类号： H01L29/04
CPC分类号： H01L29/42384 , H01L29/78696
摘要： A thin film transistor includes a semiconductor layer arranged on a substrate, a first insulating layer arranged on the substrate and the semiconductor layer, a gate electrode arranged on the first insulating layer, and a second insulating layer formed on the first insulating layer and the gate electrode. The width of the gate electrode may be less than the width of the semiconductor layer to prevent a short.
摘要翻译：薄膜晶体管包括布置在基板上的半导体层，布置在基板上的第一绝缘层和半导体层，布置在第一绝缘层上的栅电极和形成在第一绝缘层和栅极上的第二绝缘层电极。栅电极的宽度可以小于半导体层的宽度以防止短路。

4. 发明申请

US20060065892A1 Thin film transistor array panel and manufacturing method therefor 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20060065892A1
公开(公告)日：2006-03-30
申请号：US11234470
申请日：2005-09-23
申请人： Je Lee , Yang Bae , Beom Cho , Chang Jeong
发明人： Je Lee , Yang Bae , Beom Cho , Chang Jeong
IPC分类号： H01L29/04
CPC分类号： H01L29/458 , G02F1/1368 , H01L27/12 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
摘要翻译：薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极，Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。可以在Mo合金层和Cu层之间，Mo合金层和半导体层之间或Mo合金层中形成氮化物层。制造薄膜晶体管阵列面板的方法包括：形成具有第一导电层和第二导电层的数据线，所述第一导电层含有Mo合金，所述第二导电层含有Cu，并进行氮处理，使得第一导电层中的合金元素形成氮化物层。在形成第一导电层之前，在形成第一导电层之后，或者在形成第一导电层期间，可以进行氮处理。

5. 发明申请

US20080038885A1 METHOD OF FABRICATING A THIN FILM TRANSISTOR ARRAY PANEL 有权
标题翻译：制造薄膜晶体管阵列的方法
公开(公告)号：US20080038885A1
公开(公告)日：2008-02-14
申请号：US11844597
申请日：2007-08-24
申请人： Je Lee , Yang Bae , Beom Cho , Chang Jeong
发明人： Je Lee , Yang Bae , Beom Cho , Chang Jeong
IPC分类号： H01L31/0392
CPC分类号： H01L29/458 , G02F1/1368 , H01L27/12 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel includes a source electrode and a drain electrode composed of a Mo alloy layer and a Cu layer, and an alloying element of the Mo alloy layer forms a nitride layer as a diffusion barrier against the Cu layer. The nitride layer can be formed between the Mo alloy layer and the Cu layer, between the Mo alloy layer and the semiconductor layer or in the Mo alloy layer. A method of fabricating a thin film transistor array panel includes forming a data line having a first conductive layer and a second conductive layer, the first conductive layer containing a Mo alloy and the second conductive layer containing Cu, and performing a nitrogen treatment so that an alloying element in the first conductive layer forms a nitride layer. The nitrogen treatment can be performed before forming the first conductive layer, after forming the first conductive layer, or during forming the first conductive layer.
摘要翻译：薄膜晶体管阵列面板包括由Mo合金层和Cu层构成的源电极和漏电极，Mo合金层的合金元素形成氮化物层作为对Cu层的扩散阻挡层。可以在Mo合金层和Cu层之间，Mo合金层和半导体层之间或Mo合金层中形成氮化物层。制造薄膜晶体管阵列面板的方法包括：形成具有第一导电层和第二导电层的数据线，所述第一导电层含有Mo合金，所述第二导电层含有Cu，并进行氮处理，使得第一导电层中的合金元素形成氮化物层。在形成第一导电层之前，在形成第一导电层之后，或者在形成第一导电层期间，可以进行氮处理。

6. 发明申请

US20060012170A1 Fitter clamp for a pipe 审中-公开
标题翻译：用于管道的夹钳
公开(公告)号：US20060012170A1
公开(公告)日：2006-01-19
申请号：US10523992
申请日：2003-08-08
申请人： Chang Jeong
发明人： Chang Jeong
IPC分类号： F16L37/00
CPC分类号： F16L37/091
摘要： A pipe fitter clamp fixedly installed between a female bracket and a male bracket which are coupled each other to allow forward insertion of a pipe and prevent backward escape of the pipe and pressing and fixing the inserted pipe includes a ring shape body having an inner diametric portion contacting the pipe and at least one allowance slit formed in an outer diametric direction from the inner diametric portion to enable diametric extension of the inner diametric portion, and at least one allowance slit extension portion protruding from the body to have an extended allowance slit in which the length of the allowance slit is extended over an outer diameter of the body, extended and connected to have a shape of encompassing an outside of the extended allowance slit, and bent by a predetermined angle with respect to the body so as to be elastically deformed.
摘要翻译：固定地安装在阴托架和阳托架之间的管钳装夹具，它们彼此联接以允许管的向前插入并防止管的向后逸出并且压入和固定插入的管，包括环形体，其具有内径部分使所述管和从所述内径部分形成在外径方向上的至少一个允许狭缝与所述内径部分的径向延伸接触，以及至少一个容许狭缝延伸部分从所述主体突出以具有延伸的允许狭缝，其中允许狭缝的长度在主体的外径上延伸并延伸并连接成具有包围延伸余隙的外侧的形状，并相对于主体弯曲预定的角度以便弹性变形。

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