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1. 发明授权

US06345589B1 Method and apparatus for forming a borophosphosilicate film 有权
标题翻译：用于形成硼磷硅酸盐膜的方法和装置
公开(公告)号：US06345589B1
公开(公告)日：2002-02-12
申请号：US09148436
申请日：1998-09-04
申请人： Chandrasekaram Ramiah , Jeffrey L. Young , Neil L. Pagel
发明人： Chandrasekaram Ramiah , Jeffrey L. Young , Neil L. Pagel
IPC分类号： C23C1600
CPC分类号： C23C16/505 , C23C16/401
摘要： A method and apparatus for improving film stability and moisture resistance of a borophosphosilicate film. The BPSG film according to the present invention is formed under plasma conditions in which high and low frequency RF power is employed to generate the plasma. The high frequency power supply provides most of the energy to break the molecules in the process gas thereby forming the plasma and promoting the necessary reactions. The low frequency power supply regulates and controls ion bombardment of the BPSG film as it is formed. In a preferred embodiment, nitrogen is included in the process gas and the low frequency RF power supply is used to precisely control ion bombardment during deposition processing thereby allowing incorporation of an unexpectedly elevated amount of nitrogen into the film further improving film stability.
摘要翻译：一种用于提高硼磷硅酸盐膜的膜稳定性和耐湿性的方法和装置。根据本发明的BPSG膜在等离子体条件下形成，其中采用高频和低频RF功率来产生等离子体。高频电源提供大部分能量来打破工艺气体中的分子，从而形成等离子体并促进必要的反应。低频电源调节和控制BPSG薄膜形成时的离子轰击。在优选的实施方案中，氮气被包括在工艺气体中，并且低频RF电源用于在沉积处理期间精确地控制离子轰击，从而允许将意外升高量的氮掺入膜中进一步提高膜的稳定性。

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