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1. 发明申请

US20080195803A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE FOR SUPPORTING HIGH SPEED SEARCH IN CACHE MEMORY 有权
标题翻译：用于支持高速缓存搜索的非易失性半导体存储器件
公开(公告)号：US20080195803A1
公开(公告)日：2008-08-14
申请号：US12029665
申请日：2008-02-12
申请人： Chan-Ik PARK , Jin-Wook LEE , Byoung-Kook LEE
发明人： Chan-Ik PARK , Jin-Wook LEE , Byoung-Kook LEE
IPC分类号： G06F12/00
CPC分类号： G06F12/0866 , G06F12/0246 , G06F2212/222 , G06F2212/7201 , G06F2212/7203
摘要： A method for reducing a memory map table search time when employing a semiconductor memory device as a temporary memory of large capacity storage device, and a semiconductor memory device therefore, are provided. A MAP RAM is prepared for storing map table data related to the nonvolatile memory area in the volatile memory area. At an initial power-up operation, it is determined whether a logical address is searched for from the map table data while the map table data existing in a map storage area of the nonvolatile memory area is loaded into the MAP RAM. A physical address corresponding to the logical address is provided as an output, when the logical address is searched for. Search time for a memory map table is reduced and read performance in a high speed map information search is increased.
摘要翻译：提供一种用于在采用半导体存储器件作为大容量存储器件的临时存储器时减少存储器映射表搜索时间的方法，以及半导体存储器件。准备MAP RAM用于存储与易失性存储器区域中的非易失性存储器区域相关的映射表数据。在初始加电操作中，确定存在于非易失存储器区域的映射存储区域中的映射表数据是否被加载到MAP RAM中时，从地图表数据中搜索逻辑地址。当搜索逻辑地址时，提供与逻辑地址对应的物理地址作为输出。降低了存储器映射表的搜索时间，并且增加了在高速地图信息搜索中的读取性能。

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