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1. 发明申请

US20070077524A1 Method for forming patterns of semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US20070077524A1
公开(公告)日：2007-04-05
申请号：US11529310
申请日：2006-09-29
申请人： Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
发明人： Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.
摘要翻译：提供了一种用于形成半导体器件的图案的方法。根据该方法，可以在衬底上形成第一掩模图案，并且可以在每个第一掩模图案的侧壁上形成第二掩模图案。第三掩模图案可以填充在相邻的第二掩模图案之间形成的空间，并且可以去除第二掩模图案。然后可以使用第一和第三掩模图案作为蚀刻掩模去除衬底的一部分。

2. 发明授权

US07862988B2 Method for forming patterns of semiconductor device 失效
标题翻译：半导体器件形成方法
公开(公告)号：US07862988B2
公开(公告)日：2011-01-04
申请号：US11529310
申请日：2006-09-29
申请人： Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
发明人： Cha-Won Koh , Yool Kang , Sang-Gyun Woo , Seok-Hwan Oh , Gi-Sung Yeo , Ji-Young Lee
IPC分类号： G03F7/26
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338
摘要： Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.
摘要翻译：提供了一种用于形成半导体器件的图案的方法。根据该方法，可以在衬底上形成第一掩模图案，并且可以在每个第一掩模图案的侧壁上形成第二掩模图案。第三掩模图案可以填充在相邻的第二掩模图案之间形成的空间，并且可以去除第二掩模图案。然后可以使用第一和第三掩模图案作为蚀刻掩模去除衬底的一部分。

3. 发明授权

US08407742B2 System and method for reserving preference event of broadcasting program 有权
标题翻译：保留广播节目偏好事件的系统和方法
公开(公告)号：US08407742B2
公开(公告)日：2013-03-26
申请号：US11874256
申请日：2007-10-18
申请人： Ji-Young Lee
发明人： Ji-Young Lee
IPC分类号： G06F3/00 , G06F13/00 , H04N5/445
CPC分类号： H04N7/17318 , H04H20/93 , H04H60/74 , H04N5/44508 , H04N21/4532 , H04N21/47214 , H04N21/8133
摘要： There is provided a preference event reservation system of a broadcasting program including: a head end inserting event information into a broadcasting program sued broadcasting the broadcasting program containing the event information and an event information list; and a client terminal. The client terminal includes a controller displaying the event information list transferred from the head end, controlling a reservation for a preference event out of the event information list, and controlling execution of the reservation when event information that corresponds to the preference event is transferred from the head end; and a memory storing the reservation for the preference event.
摘要翻译：提供一种广播节目的偏好事件预约系统，包括：头端将事件信息插入到广播包含事件信息的广播节目的广播节目和事件信息列表中; 和客户终端。客户终端包括显示从头端传送的事件信息列表的控制器，从事件信息列表中控制偏好事件的预约，以及当从偏好事件对应的事件信息从头端以及存储所述偏好事件的预约的存储器。

4. 发明授权

US08378395B2 Methods of fabricating field effect transistors having protruded active regions 有权
标题翻译：制造具有突出的活性区域的场效应晶体管的方法
公开(公告)号：US08378395B2
公开(公告)日：2013-02-19
申请号：US12977811
申请日：2010-12-23
申请人： Ji-Young Lee , Jun Seo
发明人： Ji-Young Lee , Jun Seo
IPC分类号： H01L29/78
CPC分类号： H01L29/1037 , H01L21/76229 , H01L27/105 , H01L29/66621 , H01L29/7834
摘要： Provided are a field effect transistor, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor may have a structure in which a double gate field effect transistor and a recess channel array transistor are formed in a single transistor in order to improve a short channel effect which occurs as field effect transistors become more highly integrated, a method of manufacturing the same, and an electronic device including the field effect transistor. The field effect transistor can exhibit stable device characteristics even when more highly integrated in such a manner that both the length and width of a channel increase and particularly the channel can be significantly long, and can be manufactured simply.
摘要翻译：提供了场效应晶体管，其制造方法以及包括场效应晶体管的电子器件。场效应晶体管可以具有在单个晶体管中形成双栅极场效应晶体管和凹槽沟道阵列晶体管的结构，以便改善随着场效应晶体管变得更高度集成而发生的短沟道效应，制造它们，以及包括场效应晶体管的电子器件。即使当以通道的长度和宽度都增加并且特别是通道可以显着长的方式更高度集成时，场效应晶体管也可以表现出稳定的器件特性，并且可以简单地制造。

5. 外观设计

USD654041S1 Mobile phone 有权
公开(公告)号：USD654041S1
公开(公告)日：2012-02-14
申请号：US29387289
申请日：2011-03-11
申请人： Jong-Bo Jung , Ji-Young Lee
设计人： Jong-Bo Jung , Ji-Young Lee

6. 发明授权

US08056102B2 Channel selection device receiving a multi-channel video and a channel selection method receiving a multi-channel video 有权
标题翻译：接收多声道视频的频道选择装置和接收多声道视频的频道选择方法
公开(公告)号：US08056102B2
公开(公告)日：2011-11-08
申请号：US12213039
申请日：2008-06-13
申请人： Ji-Young Lee
发明人： Ji-Young Lee
IPC分类号： H04N5/445 , G06F13/00 , G06F3/00 , H04N5/50
CPC分类号： H04N5/44543 , H04N5/50 , H04N7/0122 , H04N21/4263 , H04N21/4316 , H04N21/4345 , H04N21/4348 , H04N21/440263 , H04N21/482
摘要： There is provided a channel selection device receiving a multi-channel video including plural videos and video configuration information on each video from a head end. The channel selection device includes a first screen display unit editing the multi-channel video based on the video configuration information and searching view configuration information to generate a channel searching view and displaying the channel searching view on a sub-screen of a television; and a second screen display unit displaying on a main screen of the television a video selected by a viewer out of the videos included in the channel searching view.
摘要翻译：提供一种频道选择装置，从头端接收包括多个视频的多频道视频和关于每个视频的视频配置信息。频道选择装置包括基于视频配置信息编辑多声道视频的第一屏幕显示单元和搜索视图配置信息以生成频道搜索视图并在电视机的子屏幕上显示频道搜索视图; 以及第二屏幕显示单元，在电视的主屏幕上显示由观看者在包括在频道搜索视图中的视频中选择的视频。

7. 外观设计

USD645439S1 Mobile phone 有权
公开(公告)号：USD645439S1
公开(公告)日：2011-09-20
申请号：US29380507
申请日：2010-12-07
申请人： Ji-Young Lee , Min-Hyouk Lee
设计人： Ji-Young Lee , Min-Hyouk Lee

8. 外观设计

USD644196S1 Mobile phone 有权
公开(公告)号：USD644196S1
公开(公告)日：2011-08-30
申请号：US29379765
申请日：2010-11-24
申请人： Ji-Young Lee , Nam-Mi Kim
设计人： Ji-Young Lee , Nam-Mi Kim

9. 外观设计

USD643827S1 Mobile phone 有权
公开(公告)号：USD643827S1
公开(公告)日：2011-08-23
申请号：US29379102
申请日：2010-11-15
申请人： Ji-Young Lee , Nam-Mi Kim
设计人： Ji-Young Lee , Nam-Mi Kim

10. 发明申请

US20110109392A1 LOW NOISE AMPLIFIER 审中-公开
标题翻译：低噪音放大器
公开(公告)号：US20110109392A1
公开(公告)日：2011-05-12
申请号：US12907925
申请日：2010-10-19
申请人： Jang Hyun PARK , Chang Sun Kim , Yea Chul Roh , Tae-Yeoul Yun , Hyun-kyu Park , Ji-Young Lee
发明人： Jang Hyun PARK , Chang Sun Kim , Yea Chul Roh , Tae-Yeoul Yun , Hyun-kyu Park , Ji-Young Lee
IPC分类号： H03F1/34
CPC分类号： H03F1/32 , H03F1/223 , H03F1/342 , H03F2200/117 , H03F2200/144 , H03F2200/147 , H03F2200/294 , H03F2200/36 , H03F2200/411 , H03F2200/451
摘要： Provided is a Low Noise Amplifier (LNA). Embodiments of the present invention provide LNAs including: a common gate amplifier circuit configure to amplify a signal of an input node to which an Alternating Current (AC) component is provided and transfer the amplified signal to an amplifier node; and a negative-feedback amplifier circuit configured to amplify a signal of the amplifier node, transfer the amplified signal to an output node, wherein the negative-feedback amplifier circuit includes a feedback capacitor and a feedback inductor connected in series between the amplifier node and the output node to form a negative feedback. the LNA of the present invention forms a negative feedback exclusive of a feedback resistance, such that a broad frequency bandwidth is obtained and noise and heat are reduced.
摘要翻译：提供了一种低噪声放大器（LNA）。本发明的实施例提供LNA，其包括：公共栅极放大器电路，其配置为放大提供交流电（AC）分量的输入节点的信号，并将放大的信号传送到放大器节点; 以及负反馈放大器电路，被配置为放大放大器节点的信号，将放大的信号传送到输出节点，其中负反馈放大器电路包括反馈电容器和反馈电感器，其串联连接在放大器节点和输出节点形成负反馈。本发明的LNA形成排除反馈电阻的负反馈，从而获得宽的频率带宽，降低噪声和热量。

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