专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5102812A Method of making a lateral bipolar heterojunction structure 失效
标题翻译：制造横向双极异质结结构的方法
公开(公告)号：US5102812A
公开(公告)日：1992-04-07
申请号：US433847
申请日：1989-11-09
申请人： Catherine G. Caneau , John R. Hayes , Hoi-Jun Yoo
发明人： Catherine G. Caneau , John R. Hayes , Hoi-Jun Yoo
IPC分类号： H01L21/306 , H01L21/331 , H01L29/73 , H01L29/735 , H01L29/737
CPC分类号： H01L29/66318 , H01L21/30612 , H01L29/7317 , H01L29/735 , H01L29/737
摘要： A method of fabricating a lateral bipolar heterojunction transistor and the transistor itself. In a first embodiment a first semiconductor layer of, for instance, InGaAsP is epitaxially grown on an insulating substrate with the subsequent selective area epitaxial regrowth of a second semiconductor layer, of for instance, InP on the substrate and adjacent to the base. The selective area regrowth forms the collector and emitter. Alternatively, the emitter and collector can be grown first and the base is regrown. In both cases, the semiconductor regrowth is epitaxial to the underlying substrate and to the semiconductor material at the side. Thereby, interface damage at the interface between the base and the emitter or collector is reduced so as to allow lateral minority carrier transport across the junction and small area junctions at low capacitance.
摘要翻译：一种制造横向双极异质结晶体管和晶体管本身的方法。在第一实施例中，例如InGaAsP的第一半导体层在绝缘衬底上外延生长，其中第二半导体层的后续选择区域外延再生长，例如在衬底上并与基底相邻的InP。选择性区域再生长形成集电极和发射极。或者，可以首先生长发射极和集电极，再生长碱。在这两种情况下，半导体再生长被外延到下面的衬底和侧面的半导体材料。因此，在基极和发射极或集电极之间的界面处的界面损伤减小，以便允许横向少数载流子在低电容下穿过结和小区域结。

2. 发明授权

US4794440A Heterojunction bipolar transistor 失效
标题翻译：异质结双极晶体管
公开(公告)号：US4794440A
公开(公告)日：1988-12-27
申请号：US142316
申请日：1987-12-30
申请人： Federico Capasso , Arthur C. Gossard , John R. Hayes , Roger J. Malik , Pierre M. Petroff
发明人： Federico Capasso , Arthur C. Gossard , John R. Hayes , Roger J. Malik , Pierre M. Petroff
IPC分类号： H01L29/737 , H01L29/72
CPC分类号： H01L29/7371
摘要： A heterojunction bipolar transistor having means for changing carrier transport properties is described.
摘要翻译：描述了具有用于改变载流子传输特性的装置的异质结双极晶体管。

3. 发明授权

US5107457A Stack data cache having a stack management hardware with internal and external stack pointers and buffers for handling underflow and overflow stack 失效
标题翻译：堆栈数据缓存具有堆栈管理硬件，内部和外部堆栈指针和缓冲区用于处理下溢和溢出堆栈
公开(公告)号：US5107457A
公开(公告)日：1992-04-21
申请号：US331718
申请日：1989-04-03
申请人： John R. Hayes , Susan C. Lee
发明人： John R. Hayes , Susan C. Lee
IPC分类号： G06F7/78 , G06F12/08
CPC分类号： G06F7/785 , G06F12/0875 , G06F2212/451
摘要： An efficient hardware cache manager controls the top-of-stack data underflow/overflow. A processor chip includes a processor, a stack buffer and the invented cache management hardware. The processor chip communicates with a remove overflow stack through an address/data bus. The cache management hardware efficiently manages overflow and underflow to and from the processor chip in such a manner less than 1% of the processor's time is spent managing the stack cache.
摘要翻译：高效的硬件缓存管理器控制堆栈顶层数据下溢/溢出。处理器芯片包括处理器，堆栈缓冲器和本发明的缓存管理硬件。处理器芯片通过地址/数据总线与去除溢出堆栈进行通信。高速缓存管理硬件以这样一种方式有效地管理到处理器芯片和从处理器芯片的溢出和下溢，使得处理器的时间少于1％用于管理堆栈高速缓存。

4. 发明授权

US4735913A Self-aligned fabrication process for GaAs MESFET devices 失效
标题翻译： GaAs MESFET器件的自对准制造工艺
公开(公告)号：US4735913A
公开(公告)日：1988-04-05
申请号：US860139
申请日：1986-05-06
申请人： John R. Hayes
发明人： John R. Hayes
IPC分类号： H01L21/285 , H01L21/324 , H01L21/338 , H01L21/265 , H01L21/44
CPC分类号： H01L29/66878 , H01L21/28587 , H01L21/3245 , Y10S148/105 , Y10S148/14 , Y10S148/142
摘要： A self-aligned process for fabricating a GaAs semiconductor MESFET by depositing a layer of tungsten over the GaAs substrate, and ion implanting the substrate to provide channel doping. A gate composed of a conductive refractory material is deposited and delineated on the tungsten layer, and source and drain regions are formed in the substrate using the gate as a mask. The resulting device is annealed and contacts are formed to the source and drain regions, and to the gate.
摘要翻译：用于通过在GaAs衬底上沉积钨层来制造GaAs半导体MESFET的自对准工艺，以及离子注入衬底以提供沟道掺杂。在钨层上沉积并描绘由导电耐火材料构成的栅极，并且使用栅极作为掩模在基板中形成源区和漏极区。所得到的器件被退火，并且与源极和漏极区域以及栅极形成接触。

5. 发明授权

US4373575A Inboard seal mounting 失效
标题翻译：内置密封安装
公开(公告)号：US4373575A
公开(公告)日：1983-02-15
申请号：US246430
申请日：1981-03-23
申请人： John R. Hayes
发明人： John R. Hayes
IPC分类号： F28D19/04 , F28F21/04 , F28D19/00
CPC分类号： F28D19/047 , F28F21/04 , Y10S165/021
摘要： A regenerator assembly for a gas turbine engine has a hot side seal assembly formed in part by a cast metal engine block having a seal recess formed therein that is configured to supportingly receive ceramic support blocks including an inboard face thereon having a regenerator seal face bonded thereto. A pressurized leaf seal is interposed between the ceramic support block and the cast metal engine block to bias the seal wear face into sealing engagement with a hot side surface of a rotary regenerator matrix.
摘要翻译：用于燃气涡轮发动机的再生器组件具有热侧密封组件，该热侧密封组件部分地由其中形成有密封凹部的铸造金属发动机块形成，其被构造成支撑地容纳陶瓷支撑块，所述陶瓷支撑块包括其上具有与其结合的再生器密封面的内侧面。在陶瓷支撑块和铸造金属发动机块之间插入加压叶片密封件，以将密封件磨损面偏压成与旋转式再生器基体的热侧表面密封接合。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式