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1. 发明授权

US07307329B2 Electronic device with guard ring 有权
标题翻译：带防护环的电子设备
公开(公告)号：US07307329B2
公开(公告)日：2007-12-11
申请号：US10887244
申请日：2004-07-08
申请人： Cartens Ahrens , Ulf Bartl , Bernd Eisener , Wolfgang Hartung , Christian Herzum , Raimund Peichl , Stefan Pompl , Hubert Werthmann
发明人： Cartens Ahrens , Ulf Bartl , Bernd Eisener , Wolfgang Hartung , Christian Herzum , Raimund Peichl , Stefan Pompl , Hubert Werthmann
IPC分类号： H01L29/47 , H01L21/28
CPC分类号： H01L29/66143 , H01L29/417 , H01L29/872
摘要： An electronic device includes a substrate, an insulating layer arranged on the substrate, the insulating layer having an opening in an area of the surface of the substrate, an active layer arranged within the opening on the surface of the substrate, the active layer including a guard ring in those areas of the surface and of the active layer which are adjacent to the insulating layer, and a contacting layer arranged on an area of the active layer, the contact layer being adjacent to an area of the guard ring. The device may be produced by a process of three-fold self-alignment, to be precise utilizing a spacer process by means of which a diffusion source having a lateral extension far below the lithography limit is made possible.
摘要翻译：电子器件包括衬底，布置在衬底上的绝缘层，所述绝缘层在衬底的表面的区域中具有开口，布置在衬底的表面的开口内的有源层，所述活性层包括保护环在与绝缘层相邻的表面和有源层的那些区域中，以及接触层，布置在有源层的区域上，接触层邻近保护环的区域。该装置可以通过三重自对准的方法制造，以精确地利用间隔物工艺，通过该间隔工艺，具有远低于光刻极限的横向延伸的扩散源成为可能。

2. 发明授权

US06972469B2 Lateral PIN diode and method for processing same 有权
标题翻译：侧面PIN二极管及其加工方法
公开(公告)号：US06972469B2
公开(公告)日：2005-12-06
申请号：US10730636
申请日：2003-12-08
申请人： Raimund Peichl , Philipp Seng
发明人： Raimund Peichl , Philipp Seng
IPC分类号： H01L29/868 , H01L31/058
CPC分类号： H01L29/868
摘要： A PIN diode includes a first p-area, an n-area, and in between an intermediate area on a first surface of a substrate, wherein a doping concentration of the intermediate area is lower than a doping concentration of the p-area and lower than a doping concentration of the n-area. Further, the PIN diode includes a first electrically conductive member, which is arranged on a side of the p-area, which faces away from the intermediate area, and a second electrically conductive member, which is arranged on a side of the n-area, which faces away from the intermediate area. The PIN diode is preferably separated from the substrate by an insulating layer, covered by a further insulating layer on the surface, which faces away from the substrate, and laterally surrounded by a trench filled with an insulating material, such that it is essentially fully insulated and encapsulated.
摘要翻译： PIN二极管包括第一p区域，n区域，并且在衬底的第一表面上的中间区域之间，其中中间区域的掺杂浓度低于p区域的掺杂浓度和较低比n区域的掺杂浓度高。此外，PIN二极管包括布置在p区域的背离中间区域的一侧的第一导电构件和布置在n区域的一侧上的第二导电构件，其面向远离中间区域。 PIN二极管优选通过绝缘层与衬底分离，绝缘层被表面上远离衬底的另一绝缘层覆盖，并且被填充有绝缘材料的沟槽横向围绕，使得其基本上完全绝缘并封装。

3. 发明授权

US06798042B2 Pin diode and method for fabricating the diode 有权
标题翻译：二极管和二极管制造方法
公开(公告)号：US06798042B2
公开(公告)日：2004-09-28
申请号：US10271286
申请日：2002-10-15
申请人： Carsten Ahrens , Raimund Peichl , Reinhard Gabl
发明人： Carsten Ahrens , Raimund Peichl , Reinhard Gabl
IPC分类号： H01L2906
CPC分类号： H01L29/417 , H01L23/5222 , H01L29/868 , H01L2924/0002 , H01L2924/00
摘要： The invention is a diode having at least one trench in the semiconductor substrate and insulation configured on the surface of the semiconductor substrate so that the trench limits the depletion region of the diode and the area over which an electrode is in direct contact with the diffusion region of the diode is limited by the insulation. The diode has the advantage that the extent of the depletion region, and thus the area capacitance of the diode, and the size of the electrode are decoupled from one another. The lateral extent of the depletion region can be chosen independently of the size of the electrode.
摘要翻译：本发明是一种在半导体衬底中具有至少一个沟槽并且在半导体衬底的表面上配置绝缘体的二极管，使得沟槽限制二极管的耗尽区和电极与扩散区直接接触的区域二极管受绝缘限制。二极管具有以下优点：耗尽区的程度以及二极管的面积电容以及电极的尺寸彼此分离。可以独立于电极的尺寸选择耗尽区的横向范围。

4. 发明授权

US06888430B2 Integrated radiofrequency circuit component having a trimming diode controlled by a trimming voltage provided by a D/A converter 有权
标题翻译：具有由D / A转换器提供的微调电压控制的微调二极管的集成射频电路部件
公开(公告)号：US06888430B2
公开(公告)日：2005-05-03
申请号：US10266356
申请日：2002-10-07
申请人： Reinhard Losehand , Raimund Peichl , Walter Zimmermann
发明人： Reinhard Losehand , Raimund Peichl , Walter Zimmermann
IPC分类号： H03H5/12 , H01P1/15 , H03B5/08 , H03B5/12 , H03H5/00 , H03M1/00 , H03M1/78 , H03J3/10
CPC分类号： H03H5/12 , H03M1/785
摘要： An integrated component for radiofrequency applications has a resonant circuit with tuning diodes and trimming diodes that are connected in parallel. A programmable conductor network generates a trimming voltage at a trimming input that enables the production of a specific relationship between a voltage present at a tuning input and the resonant frequency of the resonant circuit.
摘要翻译：用于射频应用的集成组件具有谐振电路，其具有并联连接的调谐二极管和微调二极管。可编程导体网络在微调输入端产生微调电压，使得能够产生调谐输入端存在的电压与谐振电路的谐振频率之间的特定关系。

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