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1. 发明授权

US08883612B2 Method for manufacturing a semiconductor device 有权
公开(公告)号：US08883612B2
公开(公告)日：2014-11-11
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/00 , H01L21/02 , H01L21/324 , H01L21/265 , H01L29/16
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.

2. 发明申请

US20130065379A1 METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20130065379A1
公开(公告)日：2013-03-14
申请号：US13229861
申请日：2011-09-12
申请人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
发明人： Hans-Joachim Schulze , Francisco Javier Santos Rodriguez , Anton Mauder , Johannes Baumgartl , Carsten Ahrens
IPC分类号： H01L21/20
CPC分类号： H01L21/3223 , H01L21/02378 , H01L21/02381 , H01L21/02505 , H01L21/02513 , H01L21/02664 , H01L21/0475 , H01L21/26506 , H01L21/324 , H01L21/3247 , H01L29/1608
摘要： A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.
摘要翻译：一种制造半导体器件的方法包括形成半导体本体的多孔区域。半导体本体在多孔区域中包括多孔结构。在多孔区域上形成半导体层。在半导体层中形成半导体区域。然后，半导体层沿着多孔区域与半导体本体分离，包括通过热处理将氢引入多孔区域。

3. 发明申请

US20130049203A1 Semiconductor Device with Buried Electrode 有权
标题翻译：带埋地电极的半导体器件
公开(公告)号：US20130049203A1
公开(公告)日：2013-02-28
申请号：US13220284
申请日：2011-08-29
申请人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
发明人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
IPC分类号： H01L23/498 , H01L21/283
CPC分类号： H01L29/41 , H01L21/28 , H01L21/743 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.
摘要翻译：通过在半导体衬底内形成空腔来制造具有埋电极的半导体器件，在设置在半导体衬底上的外延层中形成有源器件区域，并在空腔中的有源器件区域下方形成埋置电极。掩埋电极由不同于半导体衬底的材料的导电材料形成。

4. 发明授权

US08816503B2 Semiconductor device with buried electrode 有权
标题翻译：具有埋电极的半导体器件
公开(公告)号：US08816503B2
公开(公告)日：2014-08-26
申请号：US13220284
申请日：2011-08-29
申请人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
发明人： Carsten Ahrens , Johannes Baumgartl , Francisco Javier Santos Rodriguez , Hans-Joachim Schulze
IPC分类号： H01L23/498
CPC分类号： H01L29/41 , H01L21/28 , H01L21/743 , H01L23/535 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.
摘要翻译：通过在半导体衬底内形成空腔来制造具有埋电极的半导体器件，在设置在半导体衬底上的外延层中形成有源器件区域，并在空腔中的有源器件区域下方形成埋置电极。掩埋电极由不同于半导体衬底的材料的导电材料形成。

5. 发明授权

US08993372B2 Method for producing a semiconductor component 有权
标题翻译：半导体部件的制造方法
公开(公告)号：US08993372B2
公开(公告)日：2015-03-31
申请号：US13407731
申请日：2012-02-28
申请人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
发明人： Manfred Schneegans , Carsten Ahrens , Adolf Koller , Gerald Lackner , Anton Mauder , Hans-Joachim Schulze
IPC分类号： H01L21/00 , H01L21/36 , H01L21/02 , H01L21/762 , H01L29/861
CPC分类号： H01L21/02658 , H01L21/76202 , H01L21/76224 , H01L29/8611 , Y10T428/218
摘要： Exemplary embodiments of a method for producing a semiconductor component having a polycrystalline semiconductor body region are disclosed, wherein the polycrystalline semiconductor body region is produced between the first and second surfaces of the semiconductor body in a semiconductor component section, wherein an electromagnetic radiation having a wavelength of at least 1064 nm is introduced into the semiconductor body in a manner focused onto a position in the semiconductor component section of the semiconductor body and wherein the power density of the radiation at the position is less than 1×108 W/cm2.
摘要翻译：公开了一种用于制造具有多晶半导体体区域的半导体部件的制造方法的实施例，其中在半导体部件部分中在半导体主体的第一和第二表面之间产生多晶半导体本体区域，其中具有波长至少1064nm的光束以聚焦到半导体主体的半导体部件部分中的位置的方式被引入半导体本体，并且其中该位置处的辐射的功率密度小于1×108W / cm 2。

6. 发明申请

US20140028192A1 Field Emission Devices and Methods of Making Thereof 有权
标题翻译：现场排放装置及其制造方法
公开(公告)号：US20140028192A1
公开(公告)日：2014-01-30
申请号：US13558265
申请日：2012-07-25
申请人： Alfons Dehe , Damian Sojka , Andre Schmenn , Carsten Ahrens
发明人： Alfons Dehe , Damian Sojka , Andre Schmenn , Carsten Ahrens
IPC分类号： H01J19/02 , H01J9/02
CPC分类号： H01L21/76289 , H01L21/764 , H01L23/60 , H01L24/32 , H01L24/48 , H01L24/73 , H01L27/0288 , H01L2224/32245 , H01L2224/45099 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/00014 , H01L2924/13091 , H01L2924/181 , H02H9/046 , H01L2924/00 , H01L2924/00012
摘要： In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.
摘要翻译：在本发明的一个实施例中，电子器件包括设置在衬底中的第一发射极/集电极区域和第二发射极/集电极区域。第一发射极/集电极区域具有第一边缘/尖端，并且第二发射极/集电极区域具有第二边缘/尖端。间隙将第一边缘/尖端与第二边缘/尖端分开。第一发射极/集电极区域，第二发射极/集电极区域和间隙形成场致发射器件。

7. 发明授权

US08531011B2 Protective structure having a semiconductor substrate 有权
标题翻译：具有半导体衬底的保护结构
公开(公告)号：US08531011B2
公开(公告)日：2013-09-10
申请号：US13566039
申请日：2012-08-03
申请人： Andre Schmenn , Damian Sojka , Carsten Ahrens
发明人： Andre Schmenn , Damian Sojka , Carsten Ahrens
IPC分类号： H01L31/075 , H01L31/105 , H01L31/117
CPC分类号： H01L27/0255 , H01L21/22 , H01L21/265 , H01L29/66121 , H01L29/868
摘要： A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones.
摘要翻译：通过提供具有第一导电类型的掺杂的半导体衬底来制造保护结构。在半导体衬底的表面上施加具有第二导电类型掺杂的半导体层。在半导体层的第一区域中形成具有第二导电类型的掺杂的掩埋层，在半导体层和半导体衬底之间的接合处产生一层。在掩埋层上方的半导体层的第一区域中形成具有第一导电类型掺杂的第一掺杂区。在半导体层的第二区域中形成具有第二导电类型掺杂的第二掺杂区。在半导体层的第一和第二区域之间形成电绝缘。形成用于第一和第二掺杂剂区域的公共连接装置。

8. 发明申请

US20110169596A1 System and Method for Integrated Inductor 有权
标题翻译：集成电感系统和方法
公开(公告)号：US20110169596A1
公开(公告)日：2011-07-14
申请号：US12686164
申请日：2010-01-12
申请人： Carsten Ahrens , Gunther Mackh , Klemens Pruegl
发明人： Carsten Ahrens , Gunther Mackh , Klemens Pruegl
IPC分类号： H01F5/00 , H01L21/3205 , H05K3/00 , H01B13/00
CPC分类号： H01F27/2804 , H01F5/00 , H01F17/0006 , H01F17/04 , H01F27/255 , H01F41/046 , H01F2017/048 , H01L23/5227 , H01L27/08 , H01L28/10 , H01L2224/45147 , H01L2224/48091 , H01L2224/48247 , H01L2224/48471 , H01L2924/00011 , H01L2924/01047 , H01L2924/30107 , H05K3/10 , Y10T29/49075 , Y10T29/49155 , H01L2924/00014 , H01L2924/00 , H01L2924/01005
摘要： In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seemless ferromagnetic material surrounding at least a first portion of the conductor.
摘要翻译：在一个实施例中，电感器具有衬底，布置在衬底上方的导体和围绕导体的至少第一部分的无磁铁磁材料。

9. 发明授权

US07763520B2 Capacitor device with a layer structure disposed in a meander-shaped manner 有权
标题翻译：具有以曲折形状设置的层结构的电容器件
公开(公告)号：US07763520B2
公开(公告)日：2010-07-27
申请号：US11833074
申请日：2007-08-02
申请人： Carsten Ahrens , Raimund Foerg , Klaus Koller , Kai-Olaf Subke
发明人： Carsten Ahrens , Raimund Foerg , Klaus Koller , Kai-Olaf Subke
IPC分类号： H01L21/20
CPC分类号： H01L29/945 , H01L27/0805 , H01L28/91
摘要： A capacitor device includes a substrate, a first conductive structure, a second conductive structure, a dielectric layer structure, and a recess in the substrate. The first and second conductive structures are disposed on opposite sides of the dielectric layer structure, and the dielectric layer structure extends in a meander-shaped manner in a cross-section through the recess.
摘要翻译：电容器器件包括衬底，第一导电结构，第二导电结构，电介质层结构和衬底中的凹部。第一和第二导电结构设置在电介质层结构的相对侧上，并且电介质层结构以弯曲形状延伸通过凹槽的横截面。

10. 发明授权

US07030457B2 Capacitor and method for producing a capacitor 有权
标题翻译：电容器及其制造方法
公开(公告)号：US07030457B2
公开(公告)日：2006-04-18
申请号：US10853740
申请日：2004-05-25
申请人： Carsten Ahrens , Angelika Geiselbrechtinger , Wolfgang Hartung , Christian Herzum , Reinhard Losehand
发明人： Carsten Ahrens , Angelika Geiselbrechtinger , Wolfgang Hartung , Christian Herzum , Reinhard Losehand
IPC分类号： H01L29/00
CPC分类号： H01L29/66181 , H01L29/945
摘要： A capacitor includes a semiconductor substrate in which a trench is formed through which the substrate is doped. A dielectric layer covers the surface of the trench, wherein furthermore an electrically conductive material is arranged in the trench. A first contact structure for contacting the electrically conductive material in the trench in an electrically conductive manner and a second contact structure for contacting the doped semiconductor substrate in an electrically conductive manner are also formed in the capacitor. The capacitor has low series resistance of the electrodes and may be produced in a simple manner.
摘要翻译：电容器包括其中形成沟槽的半导体衬底，衬底通过该沟槽被掺杂。电介质层覆盖沟槽的表面，此外，导电材料还设置在沟槽中。用于以导电方式接触沟槽中的导电材料的第一接触结构和用于以导电方式接触掺杂半导体衬底的第二接触结构也形成在电容器中。电容器具有低的电极串联电阻，并且可以以简单的方式制造。

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