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1. 发明授权

US11199780B2 Reflective optical element for EUV lithography and method for adapting a geometry of a component 有权
公开(公告)号：US11199780B2
公开(公告)日：2021-12-14
申请号：US16779817
申请日：2020-02-03
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger
IPC分类号： G03F7/20 , G03F1/70
摘要： A reflective optical element (1) for reflecting light having at least one wavelength in an EUV wavelength range has an optically effective region configured for reflecting the light incident on a surface (2) of the optically effective region. The reflective optical element (1) has an edge (4) forming at least part of a boundary of an edge-free surface (3) of the reflective optical element (1), wherein the edge-free surface (3) includes the surface (2) of the optically effective region. The edge (4) has a chamfer and/or a rounding. Also disclosed is a method for adapting a geometry of at least one surface region of a component of an optical arrangement, for example of a reflective optical element (1).

2. 发明申请

US20210167569A1 RADIATION SOURCE AND DEVICE FOR FEEDING BACK EMITTED RADIATION TO A LASER SOURCE 有权
公开(公告)号：US20210167569A1
公开(公告)日：2021-06-03
申请号：US17152425
申请日：2021-01-19
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger
IPC分类号： H01S3/10 , H01S3/09 , G21K1/06 , G03F7/20
摘要： An FEL includes a feedback device for feeding back emitted illumination radiation.

3. 发明授权

US08976927B2 Substrate for mirrors for EUV lithography 有权
标题翻译：用于EUV光刻镜的基板
公开(公告)号：US08976927B2
公开(公告)日：2015-03-10
申请号：US13781073
申请日：2013-02-28
申请人： Carl Zeiss SMT GmbH
发明人： Claudia Ekstein , Johannes Lippert , Holger Maltor , Martin Weiser , Heiko Siekmann , Udo Dinger
IPC分类号： G21K5/00 , G02B5/08
CPC分类号： G02B5/0891 , G02B5/0808 , G03F7/70891 , G03F7/70958 , G21K1/06
摘要： Substrates suitable for mirrors which are used at wavelengths in the EUV wavelength range have a main body (2) and a polishing layer (3). The polishing layer (3) has a thickness of less than 10 μm and a root-mean-square roughness of less than 0.5 nm and the main body (2) is produced from an aluminum alloy. Moreover, a highly reflective layer (6) is provided on the polishing layer (3) of the substrate (1) of the EUV mirror (5).
摘要翻译：适用于EUV波长范围波长的反射镜的基板具有主体（2）和抛光层（3）。抛光层（3）的厚度小于10μm，均方根粗糙度小于0.5nm，主体（2）由铝合金制成。此外，在EUV镜（5）的基板（1）的研磨层（3）上设置高反射层（6）。

4. 发明公开

US20240248408A1 MULTI-MIRROR ARRAY 审中-公开
公开(公告)号：US20240248408A1
公开(公告)日：2024-07-25
申请号：US18626946
申请日：2024-04-04
申请人： Carl Zeiss SMT GmbH
发明人： Moritz Becker , Yanko Sarov , Udo Dinger , Dirk Ehm , Fabian Haacker , Stefan Wolfgang Schmidt , Achim Schöll
IPC分类号： G03F7/00
CPC分类号： G03F7/702 , G03F7/70316
摘要： A multi-mirror array comprises a carrier structure and a multiplicity of mirror units arranged next to one another in a grid arrangement on the carrier structure. Each mirror unit comprises a base element and a mirror element. Each mirror element is mounted individually movably relative to the base element. Each mirror element has a mirror substrate, which, on a front surface facing away from the base element, bears a reflection coating, which can be designed for EUV radiation or for DUV radiation. The mirror surfaces are arranged next to one another to substantially fill the surface area. Between directly adjacent mirror elements there is a gap delimited by side surfaces of the adjoining mirror substrates to ensure a collision-free relative movement of the adjacent mirror elements.

5. 发明授权

US11303092B2 Radiation source and device for feeding back emitted radiation to a laser source 有权
公开(公告)号：US11303092B2
公开(公告)日：2022-04-12
申请号：US17152425
申请日：2021-01-19
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger
IPC分类号： G03F7/20 , H01S3/09 , H01S3/10 , G21K1/06
摘要： An FEL includes a feedback device for feeding back emitted illumination radiation.

6. 发明申请

US20130265560A1 EUV Lithography System 有权
标题翻译： EUV光刻系统
公开(公告)号：US20130265560A1
公开(公告)日：2013-10-10
申请号：US13910912
申请日：2013-06-05
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger , Lars Wischmeier , Markus Hauf , Stephan Kellner , Igor Gurevich , Markus Deguenther
IPC分类号： G03F7/20
CPC分类号： G03F7/702 , G03F7/70058 , G03F7/70075 , G03F7/70116 , G03F7/70483 , G03F7/708 , G03F7/7085
摘要： An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51.The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable.The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77.In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.
摘要翻译： EUV光刻系统1包括EUV光束路径和监视器光束路径51. EUV光束路径包括镜子系统13，镜子系统13具有底座和多个具有凹面镜面的镜子元件17，镜子表面的取向相对于基座分别可调。监视器光路51包括至少一个监视器辐射源53，屏幕71，布置在监视器射线源53和屏幕71之间的监视器光路51中的镜子系统13以及空间分辨检测器77。在这种情况下，多个镜像元件中的每一个在分配给各个镜像元件的图像平面中产生监视器辐射源的图像，分配给镜像元件的图像平面与屏幕之间的距离B具有最大距离，多个镜像元件中的每一个与分配给它的图像平面之间的距离A具有最小距离，并且最大距离B小于最小距离A的一半。

7. 发明授权

US09997268B2 EUV-mirror, optical system with EUV-mirror and associated operating method 有权
公开(公告)号：US09997268B2
公开(公告)日：2018-06-12
申请号：US15262272
申请日：2016-09-12
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger , Frederik Bijkerk , Muharrem Bayraktar , Oliver Dier
IPC分类号： G03B27/52 , G21K1/06 , B82Y10/00 , G03F7/20 , G02B5/08
CPC分类号： G21K1/062 , B82Y10/00 , G02B5/0891 , G03F7/70075 , G03F7/70166 , G03F7/702 , G21K2201/067
摘要： An EUV mirror (1000) has a mirror element which forms a mirror surface of the mirror. The mirror element has a substrate (1020) and a multilayer arrangement (1030) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV). The multilayer arrangement has a multiplicity of layer pairs having alternate layers composed of a high refractive index layer material and a low refractive index layer material, has an active layer (1040) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field, and has an electrode arrangement to generate the electric field acting on the active layer.

8. 发明申请

US20160313646A1 FACET MIRROR FOR USE IN A PROJECTION EXPOSURE APPARATUS FOR MICROLITHOGRAPHY 有权
标题翻译：用于微型计算机投影曝光装置的FACET MIRROR
公开(公告)号：US20160313646A1
公开(公告)日：2016-10-27
申请号：US15202104
申请日：2016-07-05
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger , Martin Endres , Armin Werber , Norbert Muehlberger , Florian Bach
IPC分类号： G03F7/20 , G02B27/09 , G02B5/09 , G02B26/08
CPC分类号： G03F7/702 , G02B5/09 , G02B26/06 , G02B26/0816 , G02B26/0833 , G02B27/0927 , G03F7/70075 , G03F7/70116
摘要： A facet mirror is to be used as a bundle-guiding optical component in a projection exposure apparatus for microlithography. The facet mirror has a plurality of separate mirrors. For individual deflection of incident illumination light, the separate mirrors are in each case connected to an actuator in such a way that they are separately tiltable about at least one tilt axis. A control device, which is connected to the actuators, is configured in such a way that a given grouping of the separate mirrors can be grouped into separate mirror groups that include in each case at least two separate mirrors. The result is a facet mirror which, when installed in the projection exposure apparatus, increases the variability for setting various illumination geometries of an object field to be illuminated by the projection exposure apparatus. Various embodiments of separate mirrors for forming the facet mirrors are described.
摘要翻译：在用于微光刻的投影曝光装置中，将使用小平面镜作为束引导光学部件。小平面镜具有多个独立的反射镜。对于入射照明光的单独偏转，分离的反射镜在每种情况下都以致动器的方式连接，使得它们可以围绕至少一个倾斜轴线单独倾斜。连接到致动器的控制装置被配置成使得可以将分离的反射镜的给定分组分组成分离的反射镜组，每个反射镜组在每种情况下包括至少两个分离的反射镜。其结果是，当安装在投影曝光装置中时，增加了用于设置由投影曝光装置照亮的对象场的各种照明几何形状的可变性的刻面镜。描述了用于形成小平面反射镜的分立反射镜的各种实施例。

9. 发明授权

US09448490B2 EUV lithography system 有权
标题翻译： EUV光刻系统
公开(公告)号：US09448490B2
公开(公告)日：2016-09-20
申请号：US13910912
申请日：2013-06-05
申请人： Carl Zeiss SMT GmbH
发明人： Udo Dinger , Lars Wischmeier , Markus Hauf , Stephan Kellner , Igor Gurevich , Markus Deguenther
IPC分类号： G03B27/52 , G03B27/42 , G03F7/20
CPC分类号： G03F7/702 , G03F7/70058 , G03F7/70075 , G03F7/70116 , G03F7/70483 , G03F7/708 , G03F7/7085
摘要： An EUV lithography system 1 comprises an EUV beam path and a monitor beam path 51. The EUV beam path comprises a mirror system 13, which has a base and a multiplicity of mirror elements 17 having concave mirror surfaces, the orientation of which relative to the base is respectively adjustable.The monitor beam path 51 comprises at least one monitor radiation source 53, a screen 71, the mirror system 13, which is arranged in the monitor beam path 51 between the monitor radiation source 53 and the screen 71, and a spatially resolving detector 77. In this case, each of a plurality of the mirror elements generates an image of the monitor radiation source in an image plane assigned to the respective mirror elements, distances B between the image planes assigned to the mirror elements and the screen have a maximum distance, distances A between each of the plurality of mirror elements and the image plane assigned to it have a minimum distance, and the maximum distance B is less than half of the minimum distance A.
摘要翻译：在这种情况下，多个镜像元件中的每一个在分配给各个镜像元件的图像平面中产生监视器辐射源的图像，分配给镜像元件的图像平面与屏幕之间的距离B具有最大距离，多个镜像元件中的每一个与分配给它的图像平面之间的距离A具有最小距离，并且最大距离B小于最小距离A的一半。

10. 发明授权

US09442383B2 EUV-mirror arrangement, optical system with EUV-mirror arrangement and associated operating method 有权
标题翻译： EUV镜配置，EUV镜配置光学系统及相关操作方法
公开(公告)号：US09442383B2
公开(公告)日：2016-09-13
申请号：US14034069
申请日：2013-09-23
申请人： CARL ZEISS SMT GMBH
发明人： Udo Dinger , Frederik Bijkerk , Muharrem Bayraktar , Oliver Dier
IPC分类号： G03B27/52 , G03F7/20 , B82Y10/00 , G21K1/06 , G02B5/08
CPC分类号： G21K1/062 , B82Y10/00 , G02B5/0891 , G03F7/70075 , G03F7/70166 , G03F7/702 , G21K2201/067
摘要： An EUV mirror arrangement (100) has a multiplicity of mirror elements (110, 111, 112) which are arranged alongside one another and jointly form a mirror surface of the mirror arrangement. Each mirror element has a substrate (120) and a multilayer arrangement (130) applied on the substrate and having a reflective effect with respect to radiation from the extreme ultraviolet range (EUV), said multilayer arrangement comprising a multiplicity of layer pairs (135) having alternate layers composed of a high refractive index layer material and a low refractive index layer material. The multilayer arrangement has an active layer (140) arranged between a radiation entrance surface and the substrate and consisting of a piezoelectrically active layer material, the layer thickness (z) of which active layer can be altered by the action of an electric field. For each active layer provision is made of an electrode arrangement for generating an electric field acting on the active layer.
摘要翻译： EUV反射镜装置（100）具有多个彼此并排设置并共同形成反射镜装置的镜面的反射镜元件（110,111,112）。每个镜元件具有施加在衬底上并具有相对于来自极紫外范围（EUV）的辐射的反射效应的衬底（120）和多层布置（130），所述多层布置包括多个层对（135）具有由高折射率层材料和低折射率层材料构成的交替层。多层布置具有布置在辐射入射表面和基底之间并由压电有源层材料组成的有源层（140），其活性层可以通过电场的作用而改变。对于每个有源层，提供用于产生作用在有源层上的电场的电极装置。

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