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    • 7. 发明授权
    • Method of operating a projection exposure tool for microlithography
    • 操作用于微光刻的投影曝光工具的方法
    • US09442381B2
    • 2016-09-13
    • US13939859
    • 2013-07-11
    • Carl Zeiss SMT GmbH
    • Olaf ConradiMichael TotzeckUlrich LoeringDirk JuergensRalf MuellerChristian Wald
    • G03B27/54G03B27/68G03B27/52G03F7/20
    • G03F7/70891G03F7/70141G03F7/70483G03F7/70516G03F7/708
    • A method of operating a projection exposure tool for microlithography is provided. The projection exposure tool has a projection objective for imaging object structures on a mask into an image plane using electromagnetic radiation, during which imaging the electromagnetic radiation causes a change in optical properties of the projection objective. The method comprises the steps of: providing the layout of the object structures on the mask to be imaged and classifying the object structures according to their type of structure, calculating the change in the optical properties of the projection objective effected during the imaging process on the basis of the classification of the object structures, and using the projection exposure tool for imaging the object structures into the image plane, wherein the imaging behavior of the projection exposure tool is adjusted on the basis of the calculated change of the optical properties in order to at least partly compensate for the change of the optical properties of the projection objective caused by the electromagnetic radiation during the imaging process.
    • 提供了一种操作用于微光刻的投影曝光工具的方法。 投影曝光工具具有用于使用电磁辐射将掩模上的对象结构成像为图像平面的投影物镜,在此期间成像电磁辐射导致投影物镜的光学特性的变化。 该方法包括以下步骤:在要成像的掩模上提供对象结构的布局,并根据其结构类型对对象结构进行分类,计算在成像过程中对投影物镜的光学特性的变化, 基于对象结构的分类,以及使用用于将对象结构成像到图像平面中的投影曝光工具,其中基于所计算的光学性质的改变来调整投影曝光工具的成像行为,以便 至少部分地补偿由成像过程中的电磁辐射引起的投影物镜的光学特性的变化。