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1. 发明申请

US20120241705A1 Methods of Forming Memory Cells. 有权
标题翻译：形成记忆细胞的方法。
公开(公告)号：US20120241705A1
公开(公告)日：2012-09-27
申请号：US13070169
申请日：2011-03-23
申请人： Camillo Bresolin , Valter Soncini , Davide Erbetta
发明人： Camillo Bresolin , Valter Soncini , Davide Erbetta
IPC分类号： H01L45/00 , H01L21/02
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/16 , H01L45/165 , H01L45/1675
摘要： Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.
摘要翻译：一些实施例包括形成存储器单元的方法。可编程材料可以直接与另一材料相邻地形成。可以利用掺杂剂注入来通过引导可编程材料与其它材料的结合，和/或通过在可编程材料和其它材料之间的界面散射可编程材料和其它材料来改善可编程材料对另一种材料的粘附。存储单元可以包括第一电极材料，第一卵子材料，第二电极材料，第二卵子材料和第三电极材料。各种电极材料和卵子材料可以在嵌入电极材料中的具有卵石材料的边界带彼此连接，反之亦然; 并且具有嵌入损伤的植入物种。一些实施例包括沿着边界带连接电介质材料的超声波材料，边界带具有埋入介质材料中的超声材料，反之亦然。

2. 发明授权

US08486743B2 Methods of forming memory cells 有权
标题翻译：形成记忆细胞的方法
公开(公告)号：US08486743B2
公开(公告)日：2013-07-16
申请号：US13070169
申请日：2011-03-23
申请人： Camillo Bresolin , Valter Soncini , Davide Erbetta
发明人： Camillo Bresolin , Valter Soncini , Davide Erbetta
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/126 , H01L45/143 , H01L45/144 , H01L45/16 , H01L45/165 , H01L45/1675
摘要： Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa.
摘要翻译：一些实施例包括形成存储器单元的方法。可编程材料可以直接与另一材料相邻地形成。可以利用掺杂剂注入来通过引导可编程材料与其它材料的结合，和/或通过在可编程材料和其它材料之间的界面散射可编程材料和其它材料来改善可编程材料对另一种材料的粘附。存储单元可以包括第一电极材料，第一卵子材料，第二电极材料，第二卵子材料和第三电极材料。各种电极材料和卵子材料可以在嵌入电极材料中的具有卵形材料的边界带彼此连接，反之亦然; 并且具有嵌入损伤的植入物种。一些实施例包括沿着边界带连接电介质材料的超声波材料，边界带具有埋入介质材料中的超声材料，反之亦然。

3. 发明授权

US08828788B2 Forming electrodes for chalcogenide containing devices 有权
标题翻译：形成含硫族化物的器件的电极
公开(公告)号：US08828788B2
公开(公告)日：2014-09-09
申请号：US12777419
申请日：2010-05-11
申请人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
发明人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
IPC分类号： H01L21/00 , H01L47/00 , H01L29/02
CPC分类号： H01L45/1253 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/16 , Y10T428/31678
摘要： The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.
摘要翻译：相变存储器的电极可以由金属和非金属的混合物形成，该电极的氮原子比金属原子少。因此，在一些实施例中，电极的至少一部分具有比金属氮化物中的情况更少的氮。作为两个实例，该混合物可以包括金属和氮或金属和硅。与金属氮化物的情况相比，这样的材料可能具有较低的反应性的硫族化合物的良好粘附性。

4. 发明授权

US08865514B2 Post deposition adjustment of chalcogenide composition in chalcogenide containing semiconductors 有权
标题翻译：在含硫族化物的半导体中后硫化物组分的后沉积调整
公开(公告)号：US08865514B2
公开(公告)日：2014-10-21
申请号：US12942132
申请日：2010-11-09
申请人： Davide Erbetta , Camillo Bresolin , Silvia Rossini
发明人： Davide Erbetta , Camillo Bresolin , Silvia Rossini
IPC分类号： H01L21/00
CPC分类号： H01L45/06 , H01L21/02568 , H01L21/02664 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1641
摘要： The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
摘要翻译：用于形成含硫族化物的半导体的硫族化物膜内的组分的浓度可以通过使硫族化物膜与与硫族化物膜接触的材料反应而在沉积后调整。例如，可以用钛层涂覆含有碲的硫族化物膜。在施加热量时，钛可以与碲反应至受控程度以降低硫族化物膜中碲的浓度。

5. 发明申请

US20110278531A1 Forming Electrodes for Chalcogenide Containing Devices 有权
标题翻译：含硫族化合物的电极成型装置
公开(公告)号：US20110278531A1
公开(公告)日：2011-11-17
申请号：US12777419
申请日：2010-05-11
申请人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
发明人： Davide Erbetta , Camillo Bresolin , Andrea Gotti
IPC分类号： H01L45/00 , H01L21/02 , B32B15/04 , B32B9/00 , C23C14/34 , B05D5/12
CPC分类号： H01L45/1253 , H01L45/04 , H01L45/06 , H01L45/144 , H01L45/16 , Y10T428/31678
摘要： The electrode of a phase change memory may be formed with a mixture of metal and a non-metal, the electrode having less nitrogen atoms than metal atoms. Thus, in some embodiments, at least a portion of the electrode has less nitrogen than would be the case in a metal nitride. The mixture can include metal and nitrogen or metal and silicon, as two examples. Such material may have good adherence to chalcogenide with lower reactivity than may be the case with metal nitrides.
摘要翻译：相变存储器的电极可以由金属和非金属的混合物形成，该电极的氮原子比金属原子少。因此，在一些实施例中，电极的至少一部分具有比金属氮化物中的情况更少的氮。作为两个实例，该混合物可以包括金属和氮或金属和硅。与金属氮化物的情况相比，这样的材料可能具有较低的反应性的硫族化合物的良好粘附性。

6. 发明申请

US20080057682A1 Manufacturing method of an integrated circuit formed on a semiconductor substrate 审中-公开
标题翻译：形成在半导体基板上的集成电路的制造方法
公开(公告)号：US20080057682A1
公开(公告)日：2008-03-06
申请号：US11899275
申请日：2007-09-04
申请人： Camillo Bresolin , Davide Erbetta , Maria Marangon
发明人： Camillo Bresolin , Davide Erbetta , Maria Marangon
IPC分类号： H01L21/425 , H01L29/06
CPC分类号： H01L21/31111 , H01L21/31144 , H01L27/115 , H01L27/11521 , H01L27/11526 , H01L27/11531
摘要： An embodiment of a method for manufacturing an integrated circuit formed on a semiconductor substrate comprising the steps of: forming at least one shielding structure on said semiconductor substrate, forming a protective layer at least on portions of the semiconductor substrate that surround said shielding structure, carrying out a ionic implantation step with a tilt angle with respect to a normal to a plane defined by said semiconductor substrate so that said at least one shielding structure shields first portions of the protective layer, removing second portions of the protective layer that have been subjected to the ionic implant.
摘要翻译：一种形成在半导体衬底上的集成电路的制造方法的实施例，包括以下步骤：在所述半导体衬底上形成至少一个屏蔽结构，至少在半导体衬底的围绕所述屏蔽结构的部分上形成保护层，承载离开注入步骤，其具有相对于由所述半导体衬底限定的平面的法线的倾斜角度，使得所述至少一个屏蔽结构屏蔽所述保护层的第一部分，去除所述保护层的已经经受的离子植入物。

7. 发明申请

US20120112150A1 Post Deposition Adjustment of Chalcogenide Composition in Chalcogenide Containing Semiconductors 有权
标题翻译：包含半导体的硫属化物中硫族化合物组分的后沉积调整
公开(公告)号：US20120112150A1
公开(公告)日：2012-05-10
申请号：US12942132
申请日：2010-11-09
申请人： Davide Erbetta , Camillo Bresolin , Silvia Rossini
发明人： Davide Erbetta , Camillo Bresolin , Silvia Rossini
IPC分类号： H01L45/00 , H01L21/20
CPC分类号： H01L45/06 , H01L21/02568 , H01L21/02664 , H01L45/1233 , H01L45/1253 , H01L45/143 , H01L45/144 , H01L45/1641
摘要： The concentration of a constituent within a chalcogenide film used to form a chalcogenide containing semiconductor may be adjusted post deposition by reacting the chalcogenide film with a material in contact with the chalcogenide film. For example, a chalcogenide film containing tellurium may be coated with a titanium layer. Upon the application of heat, the titanium may react with the tellurium to a controlled extent to reduce the concentration of tellurium in the chalcogenide film.
摘要翻译：用于形成含硫族化物的半导体的硫族化物膜内的组分的浓度可以通过使硫族化物膜与与硫族化物膜接触的材料反应而在沉积后调整。例如，可以用钛层涂覆含有碲的硫族化物膜。在施加热量时，钛可以与碲反应至受控程度以降低硫族化物膜中碲的浓度。

8. 发明申请

US20130187111A1 Memory Cells 有权
标题翻译：记忆细胞
公开(公告)号：US20130187111A1
公开(公告)日：2013-07-25
申请号：US13355904
申请日：2012-01-23
申请人： Davide Erbetta , Luca Fumagalli , Innocenzo Tortorelli , Enrico Varesi
发明人： Davide Erbetta , Luca Fumagalli , Innocenzo Tortorelli , Enrico Varesi
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/148
摘要： Some embodiments include memory cells which contain chalcogenide material having germanium in combination with one or both of antimony and tellurium. An atomic percentage of the germanium within the chalcogenide material is greater than 50%; and may be, for example, within a range of from greater than or equal to about 52% to less than or equal to about 78%. In some embodiments, the memory cell has a top electrode over the chalcogenide material, a heater element under and directly against the chalcogenide material, and a bottom electrode beneath the heater element. The heater element may be L-shaped, with the L-shape having a vertical pillar region joining with a horizontal leg region. A bottom surface of the horizontal leg region may be directly against the bottom electrode, and a top surface of the vertical pillar region may be directly against the chalcogenide material.
摘要翻译：一些实施方案包括含有具有与锑和碲中的一种或两者结合的锗的硫族化物材料的记忆体。硫族化物材料中锗的原子百分比大于50％; 并且可以例如在大于或等于约52％至小于或等于约78％的范围内。在一些实施例中，存储器单元具有位于硫属化物材料上的顶部电极，位于硫酸化物材料之下并直接抵靠硫族化物材料的加热器元件，以及加热元件下方的底部电极。加热元件可以是L形，L形具有与水平支腿区域连接的垂直柱状区域。水平腿部区域的底面可以直接抵靠底部电极，并且垂直柱状区域的顶表面可以直接抵靠硫族化物材料。

9. 发明授权

US08993374B2 Phase change material gradient structures and methods 有权
标题翻译：相变材料梯度结构和方法
公开(公告)号：US08993374B2
公开(公告)日：2015-03-31
申请号：US13566375
申请日：2012-08-03
申请人： Davide Erbetta , Luca Fumagalli
发明人： Davide Erbetta , Luca Fumagalli
IPC分类号： H01L47/00 , H01L27/24 , H01L45/00
CPC分类号： H01L45/06 , H01L27/2427 , H01L45/144 , H01L45/1616 , H01L45/1625 , H01L45/165 , H01L45/1675
摘要： Memory cells and memory cell structures having a number of phase change material gradients, devices utilizing the same, and methods of forming the same are disclosed herein. One example of forming a memory cell includes forming a first electrode material, forming a phase change material gradient on the first electrode material, and forming a second electrode material on the phase change material gradient.
摘要翻译：本文公开了具有多个相变材料梯度的存储单元和存储单元结构，利用其的器件及其形成方法。形成存储单元的一个实例包括形成第一电极材料，在第一电极材料上形成相变材料梯度，以及在相变材料梯度上形成第二电极材料。

10. 发明申请

US20140043893A1 METHODS, DEVICES AND PROCESSES FOR MULTI-STATE PHASE CHANGE DEVICES 有权
标题翻译：用于多状态相位变更装置的方法，装置和处理方法
公开(公告)号：US20140043893A1
公开(公告)日：2014-02-13
申请号：US13568509
申请日：2012-08-07
申请人： Davide Colombo , Davide Erbetta
发明人： Davide Colombo , Davide Erbetta
IPC分类号： G11C11/00 , B44C1/22 , B05D5/12 , G05F3/02 , B32B7/02
CPC分类号： G11C11/5678 , B32B7/02 , B44C1/22 , G11C13/0004 , G11C13/0069 , G11C13/0097 , G11C2013/0078 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1666 , Y10T428/24942
摘要： Devices include multiple phase change materials connected in parallel between electrodes. Memory cells with multiple parallel phase change materials can be programmed to transition among more than two states representing multiple bits of information. Methods for manufacture and use are also disclosed
摘要翻译：器件包括在电极之间并联连接的多个相变材料。具有多个并联相变材料的存储单元可以被编程为在多于两个表示多个位信息的状态之间转换。还公开了制造和使用的方法

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