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1. 发明申请

US20160224408A1 REWRITING FLASH MEMORIES BY MESSAGE PASSING 审中-公开
标题翻译：通过消息传递来刷新闪存
公开(公告)号：US20160224408A1
公开(公告)日：2016-08-04
申请号：US15011537
申请日：2016-01-30
申请人： California Institute of Technology , Texas A&M University
发明人： Eyal En Gad , Wentao Huang , Yue Li , Jehoshua Bruck
IPC分类号： G06F11/07 , G06F11/10
CPC分类号： G06F11/1008 , G06F11/1072 , G11C2029/0411 , H03M13/00
摘要： Disclosed are constructions of WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems typically experienced with flash memory. A rewriting model is considered that is of practical interest to flash memory applications where only the second write uses WOM codes. The disclosed WOM code construction is based on binary erasure quantization with LDGM codes, where the rewriting uses message passing and has potential to share the efficient hardware implementations with LDPC codes in practice. The coding scheme achieves the capacity of the rewriting model.
摘要翻译：公开的是构建WOM代码，其组合重写和错误校正以减轻通常经历的闪存的可靠性和耐久性问题。对于只有第二次写入使用WOM代码的闪存应用程序，这种重写模式被认为是实际感兴趣的。所公开的WOM代码构造基于具有LDGM代码的二进制擦除量化，其中重写使用消息传递，并且具有在实践中与LDPC码共享高效硬件实现的潜力。编码方案实现了重写模型的容量。

2. 发明授权

US10379945B2 Asymmetric error correction and flash-memory rewriting using polar codes 有权
公开(公告)号：US10379945B2
公开(公告)日：2019-08-13
申请号：US15112156
申请日：2015-01-14
申请人： California Institute of Technology , New Jersey Institute of Technology , New Mexico State University Technology Transfer Corporation , The Research Foundation for the State University of New York , The Texas A&M University System
发明人： Eyal En Gad , Yue Li , Joerg Kliewer , Michael Langberg , Anxiao Jiang , Jehoshua Bruck
IPC分类号： G06F11/10 , G11C11/56 , G11C29/52 , H03M13/13 , H03M13/15
摘要： Techniques are disclosed for generating codes for representation of data in memory devices that may avoid the block erasure operation in changing data values. Data values comprising binary digits (bits) can be encoded and decoded using the generated codes, referred to as codewords, such that the codewords may comprise a block erasure-avoiding code, in which the binary digits of a data message m can be encoded such that the encoded data message can be stored into multiple memory cells of a data device and, once a memory cell value is changed from a first logic value to a second logic value, the value of the memory cell may remain at the second logic value, regardless of subsequently received messages, until a block erasure operation on the memory cell. Similarly, a received data message comprising an input codeword, in which source data values of multiple binary digits have been encoded with the disclosed block erasure-avoiding code, can be decoded in the data device to recover an estimated source data message.

3. 发明授权

US10224111B2 Error characterization and mitigation for 16 nm MLC NAND flash memory under total ionizing dose effect 有权
公开(公告)号：US10224111B2
公开(公告)日：2019-03-05
申请号：US15849423
申请日：2017-12-20
申请人： California Institute of Technology
发明人： Yue Li , Jehoshua Bruck
IPC分类号： G11C11/34 , G11C16/34 , G11C16/16 , G11C16/10 , G11C16/04 , G11C29/44 , G11C29/04
摘要： A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

4. 发明授权

US10191803B2 Rewriting flash memories by message passing 有权
公开(公告)号：US10191803B2
公开(公告)日：2019-01-29
申请号：US15011537
申请日：2016-01-30
申请人： California Institute of Technology
发明人： Eyal En Gad , Wentao Huang , Yue Li , Jehoshua Bruck
IPC分类号： G06F11/07 , G06F11/10 , G06F11/00 , H03M13/00 , G11C29/04
摘要： Disclosed are constructions of WOM codes that combine rewriting and error correction for mitigating the reliability and the endurance problems typically experienced with flash memory. A rewriting model is considered that is of practical interest to flash memory applications where only the second write uses WOM codes. The disclosed WOM code construction is based on binary erasure quantization with LDGM codes, where the rewriting uses message passing and has potential to share the efficient hardware implementations with LDPC codes in practice. The coding scheme achieves the capacity of the rewriting model.

5. 发明申请

US20180197617A1 ERROR CHARACTERIZATION AND MITIGATION FOR 16NM MLC NAND FLASH MEMORY UNDER TOTAL IONIZING DOSE EFFECT 审中-公开
公开(公告)号：US20180197617A1
公开(公告)日：2018-07-12
申请号：US15849423
申请日：2017-12-20
申请人： California Institute of Technology
发明人： Yue Li , Jehoshua Bruck
IPC分类号： G11C16/34 , G11C29/44 , G11C16/10 , G11C16/04 , G11C16/16 , G11C29/04
CPC分类号： G11C16/3495 , G11C16/0466 , G11C16/10 , G11C16/16 , G11C29/44 , G11C2029/0409 , G11C2211/5641
摘要： A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

6. 发明授权

US09870834B2 Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect 有权
公开(公告)号：US09870834B2
公开(公告)日：2018-01-16
申请号：US15298171
申请日：2016-10-19
申请人： California Institute of Technology
发明人： Yue Li , Jehoshua Bruck
IPC分类号： G11C11/34 , G11C16/34 , G11C16/16 , G11C16/10 , G11C16/04 , G11C29/44 , G11C29/04
CPC分类号： G11C16/3495 , G11C16/0466 , G11C16/10 , G11C16/16 , G11C29/44 , G11C2029/0409 , G11C2211/5641
摘要： A data device includes a memory having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme that is optional and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count.

7. 发明授权

US10665310B2 Error characterization and mitigation for 16nm MLC NAND flash memory under total ionizing dose effect 有权
公开(公告)号：US10665310B2
公开(公告)日：2020-05-26
申请号：US16259143
申请日：2019-01-28
申请人： California Institute of Technology
发明人： Yue Li , Jehoshua Bruck
IPC分类号： G11C16/34 , G11C16/16 , G11C16/10 , G11C16/04 , G11C29/44 , G11C29/04
摘要： A radiation hardened NAND flash memory data storage device suitable for space flight having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count. Methods of operating the data storage device are also described.

8. 发明申请

US20190172545A1 ERROR CHARACTERIZATION AND MITIGATION FOR 16NM MLC NAND FLASH MEMORY UNDER TOTAL IONIZING DOSE EFFECT 审中-公开
公开(公告)号：US20190172545A1
公开(公告)日：2019-06-06
申请号：US16259143
申请日：2019-01-28
申请人： California Institute of Technology
发明人： Yue Li , Jehoshua Bruck
IPC分类号： G11C16/34 , G11C16/16 , G11C29/44 , G11C16/10 , G11C16/04
CPC分类号： G11C16/3495 , G11C16/0466 , G11C16/10 , G11C16/16 , G11C29/44 , G11C2029/0409 , G11C2211/5641
摘要： A radiation hardened NAND flash memory data storage device suitable for space flight having a plurality of memory cells configured to store data values in accordance with a predetermined rank modulation scheme and a memory controller that receives a current error count from an error decoder of the data device for one or more data operations of the flash memory device and selects an operating mode for data scrubbing in accordance with the received error count and a program cycles count. Methods of operating the data storage device are also described.

9. 发明授权

US09983808B2 NAND flash reliability with rank modulation 有权
公开(公告)号：US09983808B2
公开(公告)日：2018-05-29
申请号：US14965869
申请日：2015-12-10
申请人： California Institute of Technology , Texas A&M University System
发明人： Yue Li , Eyal En Gad , Anxiao Jiang , Jehoshua Bruck
IPC分类号： G06F12/00 , G06F3/06 , G11C11/56 , G11C16/08 , G11C16/26 , G11C7/10 , G11C8/12 , G11C16/34
CPC分类号： G06F3/0619 , G06F3/0638 , G06F3/0679 , G11C7/1006 , G11C8/12 , G11C11/5642 , G11C16/08 , G11C16/26 , G11C16/349
摘要： The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for improving NAND flash reliability. RM encodes data using the relative orders of memory cell voltages, which is inherently resilient to asymmetric errors. For studying the effectiveness of RM in flash, RM is adapted to make it simple to implement with existing flash memories. The implementation is evaluated under different types of noise of 20 nm flash memory. Results show that RM offers significantly lower cell error rates compared to the current data representation in flash at typical P/E cycles. RM is applied to flash-based archival storage and shows that RM brings up to six times longer data retention time for 16 nm flash memory.

10. 发明申请

US20160170672A1 NAND FLASH RELIABILITY WITH RANK MODULATION 有权
标题翻译： NAND FLASH可靠性与RANK调制
公开(公告)号：US20160170672A1
公开(公告)日：2016-06-16
申请号：US14965869
申请日：2015-12-10
申请人： California Institute of Technology , Texas A&M University System
发明人： Yue Li , Eyal En Gad , Anxiao Jiang , Jehoshua Bruck
IPC分类号： G06F3/06
CPC分类号： G06F3/0619 , G06F3/0638 , G06F3/0679 , G11C7/1006 , G11C8/12 , G11C11/5642 , G11C16/08 , G11C16/26 , G11C16/349
摘要： The reliability of NAND flash memory decreases rapidly as density increases, preventing the wide adoptions of flash-based storage systems. A novel data representation scheme named rank modulation (RM) is discussed for improving NAND flash reliability. RM encodes data using the relative orders of memory cell voltages, which is inherently resilient to asymmetric errors. For studying the effectiveness of RM in flash, RM is adapted to make it simple to implement with existing flash memories. The implementation is evaluated under different types of noise of 20 nm flash memory. Results show that RM offers significantly lower cell error rates compared to the current data representation in flash at typical P/E cycles. RM is applied to flash-based archival storage and shows that RM brings up to six times longer data retention time for 16 nm flash memory.
摘要翻译：随着密度的增加，NAND闪存的可靠性迅速下降，从而阻止了基于闪存的存储系统的广泛采用。讨论了一种名为秩调制（RM）的新型数据表示方案，用于提高NAND闪存可靠性。 RM使用存储单元电压的相对次序对数据进行编码，这本身就适用于非对称误差。为了研究RM在闪存中的有效性，RM适用于使用现有闪存实现简单。在20nm闪存的不同类型的噪声下评估实现。结果表明，与典型市盈率周期中闪存中的当前数据表示相比，RM提供了显着更低的单元错误率。 RM适用于基于闪存的存档，并显示RM为16nm闪存提供高达六倍的数据保留时间。

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