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    • 1. 发明授权
    • Method for estimating patterns to be printed on a plate or mask by means of electron-beam lithography and corresponding printing device
    • 用于通过电子束光刻法和对应的印刷装置估计印刷在印版或掩模上的图案的方法
    • US09430597B2
    • 2016-08-30
    • US14100484
    • 2013-12-09
    • COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALTASELTA NANOGRAPHICS
    • Jerome Belledent
    • G06F19/00G06F17/50G03F7/20H01J37/317G03F1/82
    • G06F17/5045G03F1/82G03F7/2061G03F7/70441G03F7/70491H01J37/3174H01J2237/31754H01J2237/31769
    • This method for estimating patterns (M′PF,D′PF) to be printed by means of electron-beam lithography, comprises the following steps: printing (100), in a resin, a set of calibration patterns (MCF, DCF); measuring (120) characteristic dimensions (CD) of this set; supplying an estimation (140) of the point spread function (PSF) based on the characteristic dimensions (CD) measured; estimating (160) the patterns (M′PF,D′PF) to be printed by convoluting the point spread function (PSF) supplied with an initial value of the patterns (MPF,DPF).Furthermore, each calibration pattern printed includes a central zone exposed to the electron beam and a plurality of surrounding concentric zones with rotational symmetry. The characteristic dimensions measured are characteristic dimensions (CD) of the central zones of the patterns. The estimation of the point spread function (PSF) is calculated by inverting analytical modelling of the effect, on these characteristic dimensions, of applying the first point spread function portion (PSFBE) characterising electrons back-scattered by the substrate to the set of calibration patterns (MCF, DCF).
    • 用于估计通过电子束光刻印刷的图案(M'PF,D'PF)的方法包括以下步骤:在树脂中印刷(100)一组校准图案(MCF,DCF); 测量(120)该组的特征尺寸(CD); 基于测量的特征尺寸(CD)提供点扩散函数(PSF)的估计(140); 通过对提供有模式(MPF,DPF)的初始值的点扩散函数(PSF)进行卷积来估计(160)要打印的图案(M'PF,D'PF)。 此外,印刷的每个校准图案包括暴露于电子束的中心区域和具有旋转对称性的多个周围的同心区域。 测量的特征尺寸是图案的中心区域的特征尺寸(CD)。 通过将表征由衬底反向散射的电子的第一点扩散函数部分(PSFBE)应用于该组校准图案来反映点扩散函数(PSF)的估计,通过反映对这些特征尺寸的影响的分析建模, (MCF,DCF)。
    • 4. 发明申请
    • Simulation Of Shot-Noise Effects In A Particle-Beam Lithography Process And Especially An E-Beam Lithography Process
    • 粒子束光刻过程中特别是电子束光刻过程中的射击噪声效应的模拟
    • US20140172386A1
    • 2014-06-19
    • US14105648
    • 2013-12-13
    • Aselta NanographicsCommissariat A L'Energie Atomique Et Aux Energies Alternatives
    • Jerome Belledent
    • G06F17/50
    • G06F17/5009G03F7/705G03F7/70558G03F7/70625H01J2237/31793
    • Method for simulating shot-noise effects in a particle-beam lithography process, and especially an e-beam lithography process, the process including depositing particles on the surface of a sample in a preset pattern by a beam of the particles, the pattern being subdivided into pixels and a nominal dose of particles being associated with each of the pixels, wherein the process includes the calculation of a map σd of standard deviation in the normalized dose actually deposited in each of the pixels, the map of standard deviation being calculated from a map M0 of the nominal dose associated with each pixel and a point spread function PSF characterizing the process; the method being implemented by computer. Computer program product for implementing and computer programmed to implement such a method. Particle-beam lithography process, and especially an e-beam lithography process, having a prior operation of simulating shot-noise effects using such a method.
    • 用于模拟粒子束光刻工艺中的散粒噪声效应的方法,特别是电子束光刻工艺,该方法包括通过颗粒束将预定图案中的颗粒沉积在样品的表面上,该图案被细分 到像素中并且与每个像素相关联的标称剂量的颗粒,其中该过程包括计算实际沉积在每个像素中的标准化剂量中的标准偏差的映射和标准差,计算标准偏差的映射 从与每个像素相关联的标称剂量的映射M0和表征该过程的点扩散函数PSF; 该方法由计算机实现。 计算机程序产品实现和计算机程序化实现这种方法。 粒子束光刻工艺,特别是电子束光刻工艺,具有使用这种方法模拟散粒噪声效应的先前操作。