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1. 发明申请

US20030096499A1 Method for integrated nucleation and bulk film deposition 有权
标题翻译：整体成核和体积薄膜沉积的方法
公开(公告)号：US20030096499A1
公开(公告)日：2003-05-22
申请号：US10012299
申请日：2001-11-13
申请人： CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
发明人： Guy Eristoff , Sarion C.S. Lee , Liew San Leong , Goh Khoon Meng
IPC分类号： H01L021/44
CPC分类号： H01L21/28556
摘要： An integrated nucleation and bulk deposition process is disclosed for forming a CVD metal film over a semiconductor substrate that has structures formed thereon. In the integrated deposition process of the present invention, nucleation seed deposition and bulk deposition are performed in an integrated and contemporaneous manner. In one embodiment, a reactant gas and a reducing agent gas flow into a pressurized reaction chamber. As the integrated deposition process progresses, pressure and flow of reactant gas are increased while flow of reducing agent gas is decreased. The integrated deposition process of the present invention gives a significant decrease in process time as compared to prior art processes. Moreover, the integrated deposition process of the present invention gives good fill characteristics while providing sufficient protection to underlying structures.
摘要翻译：公开了一种用于在其上形成有结构的半导体衬底上形成CVD金属膜的整体成核和体积沉积工艺。在本发明的集成沉积方法中，成核种子沉积和本体沉积以一体并且同时进行的方式进行。在一个实施方案中，反应气体和还原剂气体流入加压反应室。随着集成沉积过程的进行，反应气体的压力和流量增加，而还原剂气体的流量减少。与现有技术方法相比，本发明的集成沉积方法显着减少了处理时间。此外，本发明的集成沉积方法提供良好的填充特性，同时为下面的结构提供足够的保护。

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