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1. 发明申请

US20030092276A1 Method for etching a silicided poly using fluorine-based reactive ion etching and sodium hydroxide based solution immersion 失效
标题翻译：使用氟基反应离子蚀刻和氢氧化钠基溶液浸渍蚀刻硅化物的方法
公开(公告)号：US20030092276A1
公开(公告)日：2003-05-15
申请号：US10012297
申请日：2001-11-13
申请人： CHARTERED SEMICONDUCTORS MANUFACTURED LIMITED
发明人： Song Zhigang , Guo Zhi Rong , Shailesh Redkar , Hua Younan
IPC分类号： H01L021/302 , H01L021/461
CPC分类号： H01L21/32137 , H01L21/32134
摘要： A method for removing a silicide poly on an integrated circuit (IC) chip. Specifically, one embodiment of the present invention discloses a method for exposing a gate oxide layer with a fluorine based reactive ion etching (F-based RIE) process and immersion in a sodium hydroxide based solution. The F-based RIE damages a silicide layer that covers a polysilicon gate layer. Damage to the silicide layer allows for penetration of chemicals to a polysilicon gate layer. Immersion of the IC chip in the sodium hydroxide based solution etches away the polysilicon gate layer and lifts off the silicide layer without altering an underlying gate oxide layer. Also, another embodiment uses a solution including sodium hydroxide and sodium chloride. As such, failure analysis of the gate oxide layer can proceed without concern for damage due to the removal process.
摘要翻译：一种用于去除集成电路（IC）芯片上的硅化物多晶硅的方法。具体地，本发明的一个实施方案公开了一种用氟基反应离子蚀刻（F系RIE）工艺曝光栅极氧化层并浸渍在基于氢氧化钠的溶液中的方法。基于F的RIE损坏覆盖多晶硅栅极层的硅化物层。对硅化物层的损害允许化学品渗透到多晶硅栅极层。将IC芯片浸入基于氢氧化钠的溶液中蚀刻掉多晶硅栅极层并提升硅化物层而不改变下面的栅极氧化物层。此外，另一个实施方案使用包括氢氧化钠和氯化钠的溶液。因此，栅极氧化物层的故障分析可以进行而不用担心由于去除过程造成的损坏。

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