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1. 发明授权

US07585778B2 Method of etching an organic low-k dielectric material 失效
标题翻译：蚀刻有机低k电介质材料的方法
公开(公告)号：US07585778B2
公开(公告)日：2009-09-08
申请号：US11691930
申请日：2007-03-27
申请人： Chang-Lin Hsieh , Binxi Gu
发明人： Chang-Lin Hsieh , Binxi Gu
IPC分类号： H01L21/302
CPC分类号： H01L21/31138 , H01L21/6708
摘要： A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).
摘要翻译：本文提供了一种蚀刻有机低k电介质材料的方法。在一个实施例中，蚀刻有机低k电介质材料的方法包括将包含暴露的有机低k电介质材料的衬底放置在蚀刻反应器中; 提供包含含氧气体，含氮气体和甲烷（CH 4）的工艺气体; 以及从所述工艺气体形成等离子体以蚀刻所述有机低k电介质材料。有机低k介电材料可以包括基于聚合物的低k介电材料，光致抗蚀剂或有机聚合物。含氧气体可以是氧（O 2），含氮气体可以是氮气（N 2）。

2. 发明申请

US20080237183A1 METHOD OF ETCHING AN ORGANIC LOW-K DIELECTRIC MATERIAL 失效
标题翻译：蚀刻有机低K电介质材料的方法
公开(公告)号：US20080237183A1
公开(公告)日：2008-10-02
申请号：US11691930
申请日：2007-03-27
申请人： CHANG-LIN HSIEH , Binxi Gu
发明人： CHANG-LIN HSIEH , Binxi Gu
IPC分类号： C23F1/00
CPC分类号： H01L21/31138 , H01L21/6708
摘要： A method of etching organic low-k dielectric materials is provided herein. In one embodiment, a method of etching organic low-k dielectric materials includes placing a substrate comprising an exposed organic low-k dielectric material in an etch reactor; supplying a process gas comprising an oxygen-containing gas, a nitrogen-containing gas, and methane (CH4); and forming a plasma from the process gas to etch the organic low-k dielectric material. The organic low-k dielectric material may include polymer-based low-k dielectric materials, photoresists, or organic polymers. The oxygen-containing gas may be oxygen (O2) and the nitrogen-containing gas may be nitrogen (N2).
摘要翻译：本文提供了一种蚀刻有机低k电介质材料的方法。在一个实施例中，蚀刻有机低k电介质材料的方法包括将包含暴露的有机低k电介质材料的衬底放置在蚀刻反应器中; 提供包含含氧气体，含氮气体和甲烷（CH 4 SO 4）的工艺气体; 以及从所述工艺气体形成等离子体以蚀刻所述有机低k电介质材料。有机低k介电材料可以包括基于聚合物的低k介电材料，光致抗蚀剂或有机聚合物。含氧气体可以是氧（O 2/2），含氮气体可以是氮气（N 2 O 2）。

3. 发明申请

US20050266691A1 Carbon-doped-Si oxide etch using H2 additive in fluorocarbon etch chemistry 审中-公开
标题翻译：在碳氟化合物蚀刻化学中使用H2添加剂进行碳掺杂Si氧化物蚀刻
公开(公告)号：US20050266691A1
公开(公告)日：2005-12-01
申请号：US11126053
申请日：2005-05-09
申请人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
发明人： Binxi Gu , Gerardo Delgadino , Yan Ye , Mike Chen
IPC分类号： B44C1/22 , H01L21/027 , H01L21/302 , H01L21/311 , H01L21/768
CPC分类号： H01L21/31116 , H01L21/0276 , H01L21/31138 , H01L21/76802 , H01L21/76808 , H01L21/76829
摘要： Certain embodiments include an etching method including providing an etch material, applying a gas mixture including hydrogen, forming a plasma, and etching the etch material. The etch material can include a low-k dielectric material. The gas mixture can include a hydrogen gas, a hydrogen-free fluorocarbon, and a nitrogen gas, and further include one or more of a hydrofluorocarbon gas, an inert gas, and/or a carbon monoxide gas. The hydrogen gas can be a diatomic hydrogen, a hydrocarbon, a silane and/or a fluorine-free hydrogen gas, including H2, CH4, C2H4, NH3, and/or H2O gases. The hydrogen-free fluorocarbon gas can be a CxFy gas (where x≧1 and Y≧1) and the hydrofluorocarbon gas can be a CxHyFz gas (where x≧1, y≧1 and z≧1). The gas mixture can be free of oxygen. Embodiments can include reduced pressures, reduced hydrogen flow rates and one or more plasma frequencies.
摘要翻译：某些实施例包括蚀刻方法，包括提供蚀刻材料，施加包括氢气的气体混合物，形成等离子体，以及蚀刻蚀刻材料。蚀刻材料可以包括低k电介质材料。气体混合物可以包括氢气，无氢碳氟化合物和氮气，并且还包括氢氟烃气体，惰性气体和/或一氧化碳气体中的一种或多种。氢气可以是双原子氢，烃，硅烷和/或无氟氢气，包括H 2，CH 4，C 2 H 4，NH 3和/或H 2 O 2气体。无氢碳氟化合物气体可以是气体（其中x> = 1且Y> = 1），并且氢氟烃气体可以是C _{= 1，y> = 1，z> = 1）。气体混合物可以没有氧气。实施例可以包括减压，降低氢气流速和一个或多个等离子体频率。}

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