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1. 发明授权

US07459374B2 Method of manufacturing a semiconductor heterostructure 有权
标题翻译：半导体异质结构的制造方法
公开(公告)号：US07459374B2
公开(公告)日：2008-12-02
申请号：US11674392
申请日：2007-02-13
申请人： Cécile Aulnette , Christophe Figuet , Nicolas Daval
发明人： Cécile Aulnette , Christophe Figuet , Nicolas Daval
IPC分类号： H01L21/00 , H01L21/302
CPC分类号： H01L21/76254 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262
摘要： A method for manufacturing a semiconductor heterostructure by first manufacturing a donor wafer having a first substrate with a first in-plane lattice parameter, a spatially graded buffer layer having a second in-plane lattice parameter, and a strained smoothing layer of a semiconductor material having a third in-plane lattice parameter which has a value between that of the first and second lattice parameters. A top layer is formed on the ungraded layer a top layer of a semiconductor material having a top surface, optionally with a superficial layer present on the top surface and having a thickness that is equal to or smaller than 10 nanometers. Next, a handle wafer of a second substrate having an insulator layer thereon is bonded with the donor wafer in such way that (a) the insulator layer of the handle wafer is bonded directly onto the top surface of the top layer of the donor wafer, or (b) the insulator layer of the handle wafer is bonded onto the superficial layer.
摘要翻译：一种半导体异质结构的制造方法，首先制造具有第一面内晶格参数的第一衬底的施主晶片，具有第二面内晶格参数的空间渐变缓冲层，以及半导体材料的应变平滑化层，具有第一和第二格子参数之间的值的第三平面晶格参数。顶层在未分级层上形成具有顶表面的半导体材料的顶层，任选具有位于顶表面上的表层，并具有等于或小于10纳米的厚度。接下来，其上具有绝缘体层的第二衬底的处理晶片与施主晶片接合，使得（a）把手晶片的绝缘体层直接接合到施主晶片顶层的顶表面上，或者（b）把手晶片的绝缘体层结合到表面层上。

2. 发明授权

US07544976B2 Semiconductor heterostructure 有权
标题翻译：半导体异质结构
公开(公告)号：US07544976B2
公开(公告)日：2009-06-09
申请号：US11672663
申请日：2007-02-08
申请人： Cécile Aulnette , Christophe Figuet
发明人： Cécile Aulnette , Christophe Figuet
IPC分类号： H01L31/00
CPC分类号： H01L29/155 , H01L21/0237 , H01L21/02439 , H01L21/0245 , H01L21/02507 , H01L21/0251 , H01L21/02532 , H01L29/165
摘要： A semiconductor heterostructure that includes a support substrate with a first in-plane lattice parameter, a buffer structure formed on the support substrate and having on top in a relaxed state a second in-plane lattice parameter, and a multi-layer stack of ungraded layers formed on the buffer structure. This semiconductor hetero-structure possess a lower surface roughness than other heterostructures. In the heterostructure, the ungraded layers are strained layers that comprise at least one strained smoothing layer of a semiconductor material having in a relaxed state a third in-plane lattice parameter which has a value between the first and the second lattice parameter.
摘要翻译：一种半导体异质结构，其包括具有第一面内晶格参数的支撑衬底，形成在所述支撑衬底上并且处于松弛状态的顶部具有第二面内晶格参数的缓冲结构，以及未层压层的多层堆叠形成在缓冲结构上。该半导体异质结构具有比其它异质结构更低的表面粗糙度。在异质结构中，未分级层是包含处于松弛状态的半导体材料的至少一个应变平滑层的应变层，其具有在第一和第二晶格参数之间的值的第三平面晶格参数。

3. 发明授权

US07446019B2 Method of reducing roughness of a thick insulating layer 有权
标题翻译：降低厚绝缘层粗糙度的方法
公开(公告)号：US07446019B2
公开(公告)日：2008-11-04
申请号：US11481701
申请日：2006-07-05
申请人： Nicolas Daval , Sebastien Kerdiles , Cécile Aulnette
发明人： Nicolas Daval , Sebastien Kerdiles , Cécile Aulnette
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/31055 , H01L21/31116
摘要： A method for reducing roughness of an exposed surface of an insulator layer on a substrate, by depositing an insulator layer on a substrate wherein the insulator layer includes an exposed rough surface opposite the substrate; treating the first substrate to form a zone of weakness beneath the insulator layer; and smoothing the exposed rough surface of the insulator layer by exposure to a gas plasma in a chamber. The chamber contains therein a gas at a pressure of greater than 0.25 Pa but less than 30 Pa, and the gas plasma is created using a radio frequency generator applying to the insulator layer a power density greater than 0.6 W/cm2 but less than 10 W/cm2 for at least 10 seconds to less than 200 seconds. Substrate bonding and layer transfer may be carried out subsequently to transfer the thin layer of substrate to the insulator layer and to a second substrate.
摘要翻译：一种通过在衬底上沉积绝缘体层来减小衬底上的绝缘体层的暴露表面的粗糙度的方法，其中绝缘体层包括与衬底相对的暴露的粗糙表面; 处理所述第一衬底以在所述绝缘体层下方形成弱化区; 以及通过暴露于室中的气体等离子体来平滑所述绝缘体层的暴露的粗糙表面。该室中含有大于0.25Pa但小于30Pa的压力的气体，并且使用射频发生器产生气体等离子体，该射频发生器施加到绝缘体层上，功率密度大于0.6W / cm 2，但小于10W / cm 2，持续至少10秒至小于200秒。衬底结合和层转移可以随后进行以将衬底的薄层转移到绝缘体层和第二衬底。

4. 发明授权

US07256075B2 Recycling of a wafer comprising a multi-layer structure after taking-off a thin layer 有权
标题翻译：在剥离薄层之后回收包括多层结构的晶片
公开(公告)号：US07256075B2
公开(公告)日：2007-08-14
申请号：US11075273
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Yves Mathieu Le Vaillant
IPC分类号： H01L21/00
CPC分类号： H01L21/02032 , H01L21/76254 , H01L21/76259
摘要： The invention relates to a method of transferring useful layers from a donor wafer which includes a multi-layer structure on the surface of the donor wafer that has a thickness sufficient to form multiple useful layers for subsequent detachment. The layers may be formed of materials having sufficiently different properties such that they may be selectively removed. The layers of material may also include sub-layers that can be selectively removed from each other.
摘要翻译：本发明涉及从施主晶片转移有用层的方法，该施主晶片在施主晶片的表面上包括多层结构，其具有足以形成用于随后拆卸的多个有用层的厚度。这些层可以由具有足够不同性质的材料形成，使得它们可以被选择性地去除。材料层还可以包括可以相互选择性地去除的子层。

5. 发明授权

US07602046B2 Recycling by mechanical means of a wafer comprising a multilayer structure after taking-off a thin layer thereof 有权
标题翻译：通过机械方式回收利用包括多层结构在内的薄片的薄片
公开(公告)号：US07602046B2
公开(公告)日：2009-10-13
申请号：US11075323
申请日：2005-03-07
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Takeshi Akatsu , Bruce Faure
IPC分类号： H01L29/26
CPC分类号： H01L21/02032 , H01L21/76254
摘要： The invention relates to a recyclable donor wafer that includes a substrate and a formed layer thereon, wherein the formed layer has a thickness sufficient to provide (a) at least two useful layers for detachment therefrom and (b) additional material that can be removed to planarize exposed surfaces of the useful layers prior to detachment from the donor wafer.
摘要翻译：本发明涉及一种可回收的施主晶片，其包括基板及其上的成形层，其中所形成的层具有足以提供（a）至少两个用于从其分离的有用层的厚度，以及（b）可以将其移除到在与供体晶片分离之前平坦化有用层的暴露表面。

6. 发明授权

US07232743B2 Semiconductor structure for providing strained crystalline layer on insulator and method for fabricating same 有权
标题翻译：用于在绝缘体上提供应变结晶层的半导体结构及其制造方法
公开(公告)号：US07232743B2
公开(公告)日：2007-06-19
申请号：US11280336
申请日：2005-11-17
申请人： Cécile Aulnette , Frédéric Dupont , Carlos Mazuré
发明人： Cécile Aulnette , Frédéric Dupont , Carlos Mazuré
IPC分类号： H01L21/20
CPC分类号： H01L21/76259 , H01L21/76254
摘要： A method for fabricating a semiconductor structure having a high-strained crystalline layer with a low crystal defect density is disclosed. The structure includes a substrate having a first material comprising germanium or a Group(III)-Group(V)-semiconductor or alloy thereof. In addition, a crystalline epitaxial first layer, comprising a graded buffer layer and a substantially relaxed layer, is provided. The buffer layer is sufficiently relaxed to provide relaxation of the substantially relaxed layer deposited thereon. A further layer may be provided on the first layer, and the transfer of at least the further layer is facilitated by providing a weakened zone in the first layer.
摘要翻译：公开了一种制造具有低晶体缺陷密度的高应变晶体层的半导体结构的方法。该结构包括具有包含锗或第（III） - （V）族半导体或其合金的第一材料的衬底。此外，提供了包括渐变缓冲层和基本上松弛层的晶体外延第一层。缓冲层充分松弛以提供沉积在其上的基本上松弛层的松弛。可以在第一层上提供另外的层，并且通过在第一层中提供弱化区来促进至少另外的层的转移。

7. 发明授权

US07033905B2 Recycling of a wafer comprising a buffer layer after having separated a thin layer therefrom by mechanical means 有权
标题翻译：在通过机械方法从其分离薄层之后，回收包括缓冲层的晶片
公开(公告)号：US07033905B2
公开(公告)日：2006-04-25
申请号：US10726039
申请日：2003-12-01
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
IPC分类号： H01L21/76
CPC分类号： H01L21/02032 , C30B33/00 , H01L21/76251 , H01L21/76254 , H01L21/76256 , H01L21/76259
摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method comprises employing mechanical means to remove part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, as well as donor wafers which can be recycled in accordance with the invention.
摘要翻译：提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。该方法包括采用机械装置来去除在脱离发生的一侧的施主晶片的一部分，使得在去除物质之后，至少部分能够被重新用作缓冲结构的缓冲结构作为至少部分缓冲液在有用层的随后拆卸期间的结构。本文件还涉及从可以根据本发明再循环的供体晶片以及可根据本发明再循环的供体晶片分离薄层的方法。

8. 发明授权

US07008857B2 Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom 有权
标题翻译：在从其分离薄层之后回收包含缓冲层的晶片
公开(公告)号：US07008857B2
公开(公告)日：2006-03-07
申请号：US10764289
申请日：2004-01-23
申请人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
发明人： Bruno Ghyselen , Cécile Aulnette , Bénédite Osternaud , Yves-Mathieu Vaillant , Takeshi Akatsu
IPC分类号： H01L21/46
CPC分类号： H01L21/02032
摘要： A method of recycling a donor wafer after detaching at least one useful layer is provided, the donor wafer comprising successively a substrate, a buffer structure and, before detachment, a useful layer. The method includes removal of substance relating to part of the donor wafer on the side where the detachment took place, such that, after removal of substance, there remains at least part of the buffer structure capable of being reused as at least part of a buffer structure during a subsequent detachment of a useful layer. The present document also relates to a method of producing a donor wafer which can be recycled according to the invention, methods of detaching a thin layer from a donor wafer which can be recycled according to the invention, and donor wafers which can be recycled according to the invention.
摘要翻译：提供了在分离至少一个有用层之后回收施主晶片的方法，施主晶片依次包括基板，缓冲结构，并且在分离之前，包括有用层。该方法包括去除与脱离一侧的施主晶片的一部分相关的物质，使得在去除物质之后，至少部分缓冲结构能够被重新用作缓冲液的至少一部分在有用层的随后拆卸期间的结构。本文件还涉及一种生产可根据本发明再循环的供体晶片的方法，从根据本发明可再循环的供体晶片上分离薄层的方法以及可根据本发明再循环的供体晶片本发明。

9. 发明授权

US06991995B2 Method of producing a semiconductor structure having at least one support substrate and an ultrathin layer 有权
标题翻译：制造具有至少一个支撑基板和超薄层的半导体结构的方法
公开(公告)号：US06991995B2
公开(公告)日：2006-01-31
申请号：US10784032
申请日：2004-02-20
申请人： Cécile Aulnette , Benoît Bataillou , Bruno Ghyselen , Hubert Moriceau
发明人： Cécile Aulnette , Benoît Bataillou , Bruno Ghyselen , Hubert Moriceau
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254 , H01L21/76259
摘要： A method of producing a semiconductor structure having at least one support substrate and an ultrathin layer. The method includes bonding a support substrate to a source substrate, detaching a useful layer along a zone of weakness to obtain an intermediate structure including at least the transferred useful layer and the support substrate, and treating the transferred useful layer to obtain an ultrathin layer on the support substrate. The source substrate includes a front face and a zone of weakness below the front face that defines the useful layer, and the useful layer is sufficiently thick to withstand heat treatments without forming defects therein so that it can be reduced in thickness to form the ultrathin layer. The resulting ultrathin layer is suitable for use in applications in the fields of electronics, optoelectronics or optics.
摘要翻译：一种制造具有至少一个支撑基板和超薄层的半导体结构的方法。该方法包括将支撑衬底接合到源衬底，沿着弱区分离有用层以获得包括至少转移的有用层和支撑衬底的中间结构，以及处理转移的有用层以获得超薄层支撑基板。源极基板包括限定有用层的前表面和弱化区，并且有用层足够厚以承受热处理而不在其中形成缺陷，使得其可以减小厚度以形成超薄层。所得的超薄层适用于电子，光电子学或光学领域的应用。

10. 发明授权

US07572714B2 Film taking-off method 有权
标题翻译：电影起飞方式
公开(公告)号：US07572714B2
公开(公告)日：2009-08-11
申请号：US11221045
申请日：2005-09-06
申请人： Cécile Aulnette , Ian Cayrefourcq , Carlos Mazure
发明人： Cécile Aulnette , Ian Cayrefourcq , Carlos Mazure
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention relates to a method of producing a film intended for applications in electronics, optics or optronics starting from an initial wafer, which includes a step of implanting atomic species through one of the faces of the wafer. This method includes forming a step of defined height around the periphery of the wafer, with the step having a mean thickness that is less than that of the wafer; and selectively implanting atomic species through a face of the wafer but not through the step to form an implanted zone at a defined implant depth with the film being defined between the face of the wafer and the implanted zone. The implantation of atomic species into the step can be prevented by forming a protective layer at least over the step or by masking the step. The invention also relates to a wafer obtainable by the method.
摘要翻译：本发明涉及一种从初始晶片开始制造用于电子学，光学或光电子学中的薄膜的方法，其包括通过晶片的一个表面注入原子物质的步骤。该方法包括：形成围绕晶片周边的限定高度的台阶，其平均厚度小于晶片的平均厚度; 并且通过晶片的表面选择性地注入原子物质，但不通过该步骤，以在限定的注入深度处形成植入区域，其中膜被限定在晶片的表面和植入区域之间。可以通过至少在该步骤上形成保护层或通过掩蔽该步骤来防止将原子物质注入到该步骤中。本发明还涉及可通过该方法获得的晶片。

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