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1. 发明申请

US20060284752A1 DIGITAL/ANALOG CONVERTER 失效
标题翻译：数字/模拟转换器
公开(公告)号：US20060284752A1
公开(公告)日：2006-12-21
申请号：US11379428
申请日：2006-04-20
申请人： Byung Kim , Won Choi , Youn Lee , Chan Park
发明人： Byung Kim , Won Choi , Youn Lee , Chan Park
IPC分类号： H03M1/66
CPC分类号： H03M1/682 , H03M1/765
摘要： The present invention relates to a digital/analog converter, in which a divided-voltage generating section and a divided-voltage selecting section are added to a conventional digital/analog converter so that a digital signal with high resolution of more than 10 bits can be processed and the size of an IC can be reduced. The digital/analog converter includes a first divided-voltage generating section which divides a reference supply voltage through the voltage distribution; a decoder section which receives a digital signal so as to output a decoded selection signal; a first divided-voltage selecting section which selects and outputs a plurality of divided voltages among the divided voltages generated from the first divided-voltage generating section on the basis of the selection signal output from the decoder section; a second divided-voltage selecting section which selects and outputs a plurality of divided voltages among the divided-voltages output from the first divided-voltage selecting section on the basis of the selection signal output from the decoder section; a second divided-voltage generating section which divides the plurality of divided-voltages output from the second divided-voltage selecting section; a third divided-voltage selecting section which selects a predetermined voltage among the divided-voltages output from the second divided-voltages generating section on the basis of the selection signal output from the decoder; and a voltage output section which outputs the predetermined voltage selected from the third divided-voltage selecting section.
摘要翻译：数字/模拟转换器技术领域本发明涉及数字/模拟转换器，其中分压产生部分和分压选择部分被添加到传统的数/模转换器，使得具有大于10位的高分辨率的数字信号可以是并且可以减小IC的尺寸。数字/模拟转换器包括：第一分压产生部，其通过电压分配来划分参考电源电压; 解码器部分，其接收数字信号以输出解码的选择信号; 第一分压电压选择部，其根据从解码部输出的选择信号，选择并输出从第一分压产生部生成的分压电压中的多个分压; 第二分压选择部，根据从解码部输出的选择信号，选择并输出从第一分压电压选择部输出的分压电压中的多个分压; 第二分压电压生成部，其对从第二分压电压选择部输出的多个分压进行分压; 第三分压选择部，其根据从解码器输出的选择信号，选择从第二分压产生部输出的分压中的规定电压; 以及电压输出部，输出从第三分压电压选择部选择的预定电压。

2. 发明授权

US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof 有权
标题翻译：包括虚拟存储器单元的非易失性存储器件及其程序方法
公开(公告)号：US08804417B2
公开(公告)日：2014-08-12
申请号：US13157343
申请日：2011-06-10
申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
发明人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
IPC分类号： G11C16/04 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/22
CPC分类号： G11C16/10 , G11C16/3418
摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
摘要翻译：一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

3. 发明授权

US08322019B2 Multiple transposition method for superconducting wire 有权
标题翻译：超导线多重转置法
公开(公告)号：US08322019B2
公开(公告)日：2012-12-04
申请号：US12997652
申请日：2010-07-05
申请人： Kyeong Dal Choi , Ji Kwang Lee , Woo Seok Kim , Chan Park , Yung Il Kim
发明人： Kyeong Dal Choi , Ji Kwang Lee , Woo Seok Kim , Chan Park , Yung Il Kim
IPC分类号： H01B13/02 , H01B7/30 , H01B12/06 , H01B12/08
CPC分类号： H01B12/02 , H01B7/306 , Y02E40/641 , Y10T29/49014 , Y10T29/49194
摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.
摘要翻译：提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元，包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

4. 发明申请

US20120273477A1 STEAM COOKING APPARATUS 审中-公开
标题翻译：蒸汽烹饪设备
公开(公告)号：US20120273477A1
公开(公告)日：2012-11-01
申请号：US13456897
申请日：2012-04-26
申请人： Guen Yong PARK , Jae Hyoun Kim , Cheol Jin Kim , Han Seong Kang , Jin Hae Cho , Eun Oh Kim , Chan Park , Dong-Ho Lee
发明人： Guen Yong PARK , Jae Hyoun Kim , Cheol Jin Kim , Han Seong Kang , Jin Hae Cho , Eun Oh Kim , Chan Park , Dong-Ho Lee
IPC分类号： A47J27/21 , H05B3/02
CPC分类号： F24C15/327
摘要： A steam cooking apparatus with improved water supply and drainage structures. The apparatus includes a body, a cooking compartment, a steam generator to supply steam into the cooking compartment, a water vessel to store water and supply the water into the steam generator, a water supply device including a holder and a slider slidably mounted in the holder so as to be withdrawn from the body, a first water supply tube connecting the slider and the water vessel, a second water supply tube connecting the water vessel and the steam generator, and a drain tube to drain water in the steam generator to the outside of the body. The drain tube includes an end fixed to the slider so that the end of the drain tube is withdrawn with the slider from the body when water in the steam generator is drained to the outside.
摘要翻译：具有改善给排水结构的蒸汽烹饪设备。该装置包括主体，烹饪室，蒸汽发生器，以将蒸汽供应到烹饪室中，水容器，用于存储水并将水供应到蒸汽发生器中;供水装置，其包括保持器和可滑动地安装在所述蒸汽发生器中的滑块保持器，以便从身体中取出，连接滑块和水容器的第一供水管，连接水容器和蒸汽发生器的第二供水管和排水管，以将蒸汽发生器中的水排出到身体外。排水管包括固定到滑块的端部，使得当蒸汽发生器中的水排出到外部时，排水管的端部与滑块一起从主体被抽出。

5. 发明申请

US20120068389A1 Methods of fabricating polycrystalline ceramic for thermoelectric devices 审中-公开
标题翻译：制造用于热电器件的多晶陶瓷的方法
公开(公告)号：US20120068389A1
公开(公告)日：2012-03-22
申请号：US13064222
申请日：2011-03-11
申请人： Chan Park , Wook Jo , Jin-Sang Kim , O-Jong Kwon
发明人： Chan Park , Wook Jo , Jin-Sang Kim , O-Jong Kwon
IPC分类号： C04B35/645
CPC分类号： C04B35/01 , B32B18/00 , C04B35/6268 , C04B35/645 , C04B2235/3201 , C04B2235/3208 , C04B2235/3213 , C04B2235/3272 , C04B2235/3275 , C04B2235/5292 , C04B2235/604 , C04B2235/612 , C04B2235/663 , C04B2235/666 , C04B2235/787
摘要： Provided is a method of fabricating polycrystalline ceramic for thermoelectric devices. The method includes preparing calcined ceramic powders, forming a ceramic sheet by uni-axially pressing the calcined ceramic powders, stacking a plurality of the ceramic sheets in a uni-axial direction, and cofiring the stacked the plurality of the ceramic sheets.
摘要翻译：提供一种制造用于热电装置的多晶陶瓷的方法。该方法包括制备煅烧陶瓷粉末，通过单轴压制煅烧陶瓷粉末，沿单轴方向堆叠多个陶瓷片材，并共烧多个陶瓷片材，形成陶瓷片材。

6. 发明授权

US08089332B2 Superconducting power transforming apparatus 有权
标题翻译：超导电力变压装置
公开(公告)号：US08089332B2
公开(公告)日：2012-01-03
申请号：US12679697
申请日：2009-11-19
申请人： Kyeong-Dal Choi , Ji-Kwang Lee , Woo-Seok Kim , Chan Park , Sun-Bok Choi
发明人： Kyeong-Dal Choi , Ji-Kwang Lee , Woo-Seok Kim , Chan Park , Sun-Bok Choi
IPC分类号： H01F27/02
CPC分类号： H01F36/00 , H01F6/065 , Y02E40/66
摘要： The present invention relates to a superconducting power transforming apparatus. The superconducting power transforming apparatus according to the present invention comprises a transformer housing having a transforming cable passing hole and filled with a liquid cooling means; a superconducting transformer housed in the transformer housing in a state that the superconducting transformer is immersed in the liquid cooling means; a tap changer housing having a tap changing cable passing hole and vacuum-sealed from outside; a power tap changer housed in the vacuum tap changer housing; and a cable linking pipe vacuum-sealed from the transformer housing and the tap changer housing, and linking the transforming cable passing hole with the tap changing passing hole in order that a transformer winding tap cable connecting the superconducting transformer and the power tap changer passes through. Consequently, it is possible to guarantee stable operation of a superconducting transformer which works at an extremely low temperature and a power tap changer as like On-Load Tap Changer which works at low temperature.
摘要翻译：本发明涉及一种超导功率变换装置。根据本发明的超导电力变换装置包括具有变换电缆通孔并且充满液体冷却装置的变压器壳体; 以超导变压器浸入液体冷却装置的状态容纳在变压器外壳中的超导变压器; 分接开关壳体，具有抽头更换电缆通孔并从外部真空密封; 一个容纳在真空分接开关壳体中的电源分接开关; 以及从变压器壳体和分接开关壳体真空密封的电缆连接管，并将变压电缆通孔与抽头更换通孔相连接，以便连接超导变压器和电源分接开关的变压器绕组电缆通过。因此，可以保证在极低温度下工作的超导变压器的稳定运行，以及在低温工作的有载分接开关的功率抽头变换器。

7. 发明申请

US20110305079A1 NONVOLATILE MEMORY DEVICE INCLUDING DUMMY MEMORY CELL AND PROGRAM METHOD THEREOF 有权
标题翻译：非易失性存储器件，包括DUMMY存储器单元及其程序方法
公开(公告)号：US20110305079A1
公开(公告)日：2011-12-15
申请号：US13157343
申请日：2011-06-10
申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
发明人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/3418
摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
摘要翻译：一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

8. 发明申请

US20110239443A1 MULTIPLE TRANSPOSITION METHOD FOR SUPERCONDUCTING WIRE 有权
标题翻译：用于超导线的多种传输方法
公开(公告)号：US20110239443A1
公开(公告)日：2011-10-06
申请号：US12997652
申请日：2010-07-05
申请人： Kyeong Dal Choi , Ji K wang Lee , Woo Seok Kim , Chan Park , Yung II Kim
发明人： Kyeong Dal Choi , Ji K wang Lee , Woo Seok Kim , Chan Park , Yung II Kim
IPC分类号： H01L39/24
CPC分类号： H01B12/02 , H01B7/306 , Y02E40/641 , Y10T29/49014 , Y10T29/49194
摘要： Provided is a multiple transposition method for superconducting wire, by making each superconducting wire unit from second-generation superconducting wires that were firstly transposed and then transposing each superconducting wire unit in such a manner that the phase of each unit can be changed along the length, comprising preparing wires by making curves on superconducting wires in such a manner that the superconducting wires of a thin multiple layer grown epitaxially are slit in zigzags and then making the curves repeatedly and by machining the wires with a desired length; making first-transposed superconducting wire units by combining a plurality of the prepared wires such that curves of adjacent wires come in touch to each other and are superposed; preparing a superconducting wire unit bundle by arranging the first-transposed superconducting wires units and by locating a plurality of the first-transposed superconducting wire units in parallel along the length; and making a second transposition on the first-transposed superconducting wire units by rotating the plurality of superconducting wire units on the central axis of the superconducting wire unit bundle along the length to be twisted and combined with each other.
摘要翻译：提供了一种用于超导线的多重转置方法，通过使来自第二代超导线的每个超导线单元首先被转置，然后以每个单元的相位沿着该长度改变的方式移位每个超导线单元，包括通过在超导线上制作曲线来制备导线，使得外延生长的薄多层的超导线以锯齿形切割，然后反复制作曲线并通过机加工所需长度的线; 通过组合多个所制备的导线使相邻导线的曲线彼此接触并重叠而制造第一转置超导线单元; 通过布置第一转置超导线单元并通过沿着长度平行地定位多个第一转置的超导线单元来制备超导线单元束; 以及通过在所述超导线单元束的中心轴线上沿着要被扭曲并且彼此组合的长度旋转所述多个超导线单元，在所述第一转置的超导线单元上进行第二转置。

9. 发明授权

US08019558B2 Method for predicting failure of geotechnical structures 有权
标题翻译：预测岩土结构失效的方法
公开(公告)号：US08019558B2
公开(公告)日：2011-09-13
申请号：US12666556
申请日：2009-05-08
申请人： Dae-Sung Cheon , Eui-Sub Park , Yong-Bok Jung , Chan Park , Joong-Ho Synn
发明人： Dae-Sung Cheon , Eui-Sub Park , Yong-Bok Jung , Chan Park , Joong-Ho Synn
IPC分类号： G01B5/28
CPC分类号： G01V1/008 , E02D1/022 , G10K11/002
摘要： Provided is a method of predicting failure in geotechnical structures using an AE method instead of a conventional displacement or stress measuring method, which belongs to a field of rock mechanics and geotechnical engineering. The method is a measurement technology for identifying signs of failure in geotechnical structures using Acoustic Emission (AE) signals generated by damage in the geotechnical structure and also providing management standard for failure prediction.
摘要翻译：提供了一种使用AE方法代替岩石力学和岩土工程领域的常规位移或应力测量方法来预测岩土结构失效的方法。该方法是使用由岩土结构中的损伤产生的声发射（AE）信号识别岩土结构失效迹象的测量技术，并提供故障预测的管理标准。

10. 发明申请

US20110204468A1 Image sensor and method of manufacturing the same 审中-公开
公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

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