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1. 发明授权

US06911382B2 Method of forming a contact in a semiconductor device utilizing a plasma treatment 失效
标题翻译：利用等离子体处理在半导体器件中形成接点的方法
公开(公告)号：US06911382B2
公开(公告)日：2005-06-28
申请号：US10721978
申请日：2003-11-25
申请人： Byung Hyun Jung , Bo Min Seo
发明人： Byung Hyun Jung , Bo Min Seo
IPC分类号： H01L21/28 , H01L21/425 , H01L21/44 , H01L21/4763 , H01L21/768
CPC分类号： H01L21/76802 , H01L21/76831
摘要： Semiconductor devices and methods to form a contact of a semiconductor device are disclosed. An example method to form a contact includes forming an insulating layer on a substrate; etching the insulating layer to form a contact hole; depositing a silicon layer on sidewalls and an undersurface of the contact hole; forming a silicon spacer on the sidewalls of the contact hole by etching the silicon layer; transforming the silicon spacer to a silicon nitride spacer; depositing a diffusion barrier on the silicon nitride spacer; and filling the contact hole with tungsten. Because the silicon nitride spacer formed on the sidewalls of the contact hole can serve as a leakage current blocking layer, the yield and the reliability of the semiconductor devices manufactured by this example process are enhanced.
摘要翻译：公开了形成半导体器件的接触的半导体器件和方法。形成接触的示例性方法包括在基板上形成绝缘层; 蚀刻绝缘层以形成接触孔; 在接触孔的侧壁和下表面上沉积硅层; 通过蚀刻硅层在接触孔的侧壁上形成硅间隔物; 将硅衬垫转换成氮化硅间隔物; 在氮化硅间隔物上沉积扩散阻挡层; 并用钨填充接触孔。由于形成在接触孔的侧壁上的氮化硅间隔物可以用作漏电流阻挡层，所以通过该示例性工艺制造的半导体器件的产率和可靠性得到提高。

2. 发明授权

US06800553B2 Method for manufacturing a silicide layer of semiconductor device 有权
标题翻译：半导体器件的硅化物层的制造方法
公开(公告)号：US06800553B2
公开(公告)日：2004-10-05
申请号：US10180760
申请日：2002-06-26
申请人： Byung Hyun Jung , Hyoung Yoon Kim
发明人： Byung Hyun Jung , Hyoung Yoon Kim
IPC分类号： H01L2144
CPC分类号： H01L21/28052 , H01L21/265 , H01L21/28518 , H01L29/665
摘要： Disclosed is a method for manufacturing a silicide layer of semiconductor device. The disclosed comprises the steps of: depositing a lower metal layer on the surface of semiconductor substrate and then, performing a plasma treatment; and depositing an upper metal layer on the plasma-treated lower metal layer and then, performing a thermal treatment process, thereby forming a silicide layer on the surface of semiconductor substrate.
摘要翻译：公开了半导体器件的硅化物层的制造方法。所公开的方法包括以下步骤：在半导体衬底的表面上沉积下金属层，然后进行等离子体处理; 并在等离子体处理的下金属层上沉积上金属层，然后进行热处理工艺，从而在半导体衬底的表面上形成硅化物层。

3. 发明授权

US07259092B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07259092B2
公开(公告)日：2007-08-21
申请号：US10930164
申请日：2004-08-30
申请人： Byung Hyun Jung
发明人： Byung Hyun Jung
IPC分类号： H01L21/4763
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76876 , H01L23/485 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device and a method for fabricating the same is disclosed, to prevent a defective contact of a line in a method of completely filling a minute contact hole having a high aspect ratio with a refractory metal layer, which includes the steps of forming a contact hole in an insulating interlayer of a semiconductor substrate; depositing a barrier metal layer on an inner surface of the contact hole and an upper surface of the insulating interlayer, wherein the process of depositing the barrier metal is performed by sequentially progressing one cycle of: injecting a reaction gas of SiH4 to the chamber, injecting a first purging gas to the chamber, injecting a reaction gas of WF6 to the chamber; injecting a second purging gas to the chamber, injecting a reaction gas of NH3 to the chamber, and injecting a third purging gas to the chamber; depositing a first metal layer for nucleation on the barrier metal layer by the atomic layer deposition process; and depositing a second metal layer on the first metal layer inside the contact hole, to fill the contact hole completely.
摘要翻译：公开了一种半导体器件及其制造方法，以防止在与难熔金属层完全填充具有高纵横比的微小接触孔的方法中线的接触不良，其包括形成接触的步骤在半导体衬底的绝缘中间层中的孔; 在接触孔的内表面和绝缘中间层的上表面上沉积阻挡金属层，其中沉积阻挡金属的过程是通过依次进行一个循环来进行的：将SiH 4的反应气体注入向室内注入第一吹扫气体，向室内注入WF 6反应气体，向所述室注入第二吹扫气体，将NH 3的反应气体注入所述室，并向所述室注入第三吹扫气体; 通过原子层沉积工艺在阻挡金属层上沉积成核的第一金属层; 以及在接触孔内的第一金属层上沉积第二金属层，以完全填充接触孔。

4. 发明授权

US07022601B2 Method of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US07022601B2
公开(公告)日：2006-04-04
申请号：US10728948
申请日：2003-12-08
申请人： Byung Hyun Jung , Dae Heok Kwon
发明人： Byung Hyun Jung , Dae Heok Kwon
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/3205
CPC分类号： H01L21/76843 , H01L21/28562 , H01L21/76876
摘要： A method of manufacturing a semiconductor device is disclosed wherein a WSiN layer is deposited in a contact hole as a barrier metal using an ALD process. A tungsten layer is deposited on the WSiN layer in the nucleation stage thereof. Then, using a CVD process, the contact hole is completely filled with a tungsten layer. The WSiN layer is continuously and uniformly deposited in the contact hole having high aspect ratio, and the tungsten layer in the nucleation stage can be continuously and uniformly deposited on the WSiN layer, thus completely filling the contact hole with a tungsten layer deposited by the CVD process.
摘要翻译：公开了一种制造半导体器件的方法，其中使用ALD工艺将WSiN层作为阻挡金属沉积在接触孔中。钨层在其成核阶段沉积在WSiN层上。然后，使用CVD工艺，接触孔完全填充钨层。 WSiN层连续均匀地沉积在具有高纵横比的接触孔中，并且成核阶段中的钨层可以连续均匀地沉积在WSiN层上，从而用CVD沉积的钨层完全填充接触孔处理。

5. 发明授权

US06916737B2 Methods of manufacturing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US06916737B2
公开(公告)日：2005-07-12
申请号：US10722312
申请日：2003-11-25
申请人： Byung Hyun Jung , Hyoung Yoon Kim
发明人： Byung Hyun Jung , Hyoung Yoon Kim
IPC分类号： H01L21/768 , H01L21/4763
CPC分类号： H01L21/7684 , H01L21/76883 , Y10S438/958
摘要： Methods of manufacturing semiconductor devices are disclosed. In an illustrated method, a contact hole in an insulating layer is filled with a copper layer and the copper layer is planarized. During the planarzing, a CuO layer is parasitically formed on the surface of the copper layer. The CuO layer is removed by plasma processing using ammonia or nitrogen. A conductive CuN layer is formed on the surface of the copper layer. Stability of the removal process of CuO layer is secured.
摘要翻译：公开了制造半导体器件的方法。在图示的方法中，绝缘层中的接触孔填充有铜层，铜层被平坦化。在平坦化期间，CuO层在铜层的表面上寄生地形成。通过使用氨或氮的等离子体处理除去CuO层。在铜层的表面上形成导电性CuN层。确保CuO层去除工艺的稳定性。

6. 发明授权

US06319825B1 Metallization process of semiconductor device 失效
标题翻译：半导体器件金属化工艺
公开(公告)号：US06319825B1
公开(公告)日：2001-11-20
申请号：US09310820
申请日：1999-05-12
申请人： Byung Hyun Jung , Heui Bok Ahn
发明人： Byung Hyun Jung , Heui Bok Ahn
IPC分类号： H01L214763
CPC分类号： H01L21/76886 , H01L21/76838 , H01L21/76843 , H01L21/7685 , H01L21/76877 , H01L23/485 , H01L23/53219 , H01L23/53223 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metallization process of a semiconductor device is disclosed. The metallization process of a semiconductor device comprising the steps of: providing a semiconductor substrate having a junction region; forming an insulating layer on the upper of the semiconductor substrate; forming a contact hole by patterning the insulating layer so as to expose one portion of the junction region; forming a glue layer on the upper of the insulating layer, and at the bottom and inner surfaces of the contact hole; forming a barrier metal layer on the glue layer; forming an Mg layer as a solid solution layer on the barrier metal layer; forming a metal layer on the Mg layer; and forming a metal wiring layer having more liquidity than that of the metal layer, by melting the Mg layer to the metal.
摘要翻译：公开了一种半导体器件的金属化工艺。半导体器件的金属化工艺包括以下步骤：提供具有接合区域的半导体衬底; 在所述半导体衬底的上部形成绝缘层; 通过图案化所述绝缘层来形成接触孔，以暴露所述接合区域的一部分; 在绝缘层的上部以及接触孔的底面和内表面上形成胶层; 在胶层上形成阻挡金属层; 在阻挡金属层上形成作为固溶层的Mg层; 在Mg层上形成金属层; 并且通过将Mg层熔化成金属，形成具有比金属层更多的流动性的金属布线层。

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