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1. 发明授权

US08927414B2 Graphene structure and method of manufacturing the graphene structure, and graphene device and method of manufacturing the graphene device 有权
公开(公告)号：US08927414B2
公开(公告)日：2015-01-06
申请号：US13470487
申请日：2012-05-14
申请人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
发明人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
IPC分类号： H01L21/4763 , H01L23/52
CPC分类号： H01L29/1606 , B82Y10/00 , B82Y30/00 , B82Y40/00 , H01L21/02164 , H01L21/02381 , H01L21/0245 , H01L21/02491 , H01L21/02527 , H01L21/0262 , H01L21/02639 , H01L21/02645 , H01L29/0673 , H01L29/66045 , H01L29/66439 , H01L29/66742 , H01L29/775 , H01L29/785 , H01L29/78684 , H01L29/78696
摘要： A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer.

2. 发明授权

US09230801B2 Graphene structure and method of fabricating the same 有权
标题翻译：石墨烯结构及其制造方法
公开(公告)号：US09230801B2
公开(公告)日：2016-01-05
申请号：US13229183
申请日：2011-09-09
申请人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
发明人： Byoung-Iyong Choi , Eun-kyung Lee , Dong-mok Whang
IPC分类号： B32B9/00 , H01L21/02 , C01B31/04
CPC分类号： H01L21/02381 , C01B32/182 , H01L21/02428 , H01L21/02444 , H01L21/0245 , H01L21/02502 , H01L21/02505 , H01L21/02527 , H01L21/0259 , H01L21/02606 , H01L21/02664 , Y10T428/13 , Y10T428/24273 , Y10T428/24479 , Y10T428/30
摘要： A graphene structure and a method of forming the same may include a graphene formed in a three-dimensional (3D) shape, e.g., a column shape, a stacking structure, and a three-dimensionally connected structure. The graphene structure can be formed by using Ge.
摘要翻译：石墨烯结构及其形成方法可以包括以三维（3D）形状形成的石墨烯，例如柱状，堆叠结构和三维连接的结构。可以使用Ge形成石墨烯结构。

3. 发明授权

US08679976B2 Method of manufacturing graphene by using germanium layer 有权
标题翻译：使用锗层制造石墨烯的方法
公开(公告)号：US08679976B2
公开(公告)日：2014-03-25
申请号：US12976874
申请日：2010-12-22
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Dong-mok Whang , Jae-hyun Lee
IPC分类号： H01L21/44
CPC分类号： H01L21/02527 , B82Y30/00 , B82Y40/00 , C01B32/186 , C01B2204/04 , C23C16/0272 , C23C16/26 , C30B25/02 , C30B29/08 , H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/0262
摘要： A method of manufacturing graphene includes forming a germanium layer on a surface of a substrate, and forming the graphene directly on the germanium layer by supplying carbon-containing gas into a chamber in which the substrate is disposed.
摘要翻译：制造石墨烯的方法包括在基板的表面上形成锗层，并且通过将含碳气体供给到其中设置基板的室中，直接在锗层上形成石墨烯。

4. 发明授权

US07754508B2 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US07754508B2
公开(公告)日：2010-07-13
申请号：US11335503
申请日：2006-01-20
申请人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

5. 发明申请

US20060115916A1 Method of manufacturing silicon optoelectronic device, silicon optoelectronic device manufacture by the method, and image input and/or output apparatus using the silicon optoelectronic device 有权
标题翻译：制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及使用硅光电子器件的图像输入和/或输出装置
公开(公告)号：US20060115916A1
公开(公告)日：2006-06-01
申请号：US11335503
申请日：2006-01-20
申请人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
发明人： Eun-kyung Lee , Byoung-iyong Choi , Pil-soo Ahn , Jun-young Kim , Young-gu Jin
IPC分类号： H01L21/00
CPC分类号： H01L33/34 , B82Y10/00 , B82Y20/00 , B82Y30/00 , G01Q80/00 , H01L27/14601 , H01L27/14621 , H01L27/14645 , H01L27/14683 , H01L27/156 , H01L31/02363 , H01L31/028 , H01L31/035281 , H01L31/1804 , H01L33/0054 , H01L33/24 , Y02E10/547 , Y02P70/521
摘要： A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen.
摘要翻译：提供一种制造硅光电子器件的方法，通过该方法制造的硅光电子器件，以及包括硅光电子器件的图像输入和/或输出设备。该方法包括制备n型或p型硅基衬底，通过蚀刻形成沿衬底表面的微观图案，在微缺陷图案上形成具有开口的控制膜，并在具有微观图案的衬底，使得通过控制膜的开口将与衬底相反类型的预定掺杂剂注入到衬底上以被掺杂到深度，使得导致发光的光电转换效应和 /或在pn结中发生量子限制效应的接收。硅光电子器件具有优异的发光效率，可以用作发光器件和光接收器件中的至少一种，并且具有高波长选择性。此外，具有硅光电子器件的二维阵列的硅光电子器件面板可以应用于能够直接在屏幕中显示图像和/或输入光学信息的图像输入和/或输出设备。

6. 发明申请

US20060227837A1 Quantum dot vertical cavity surface emitting laser and fabrication method of the same 审中-公开
标题翻译：量子点垂直腔表面发射激光器及其制作方法相同
公开(公告)号：US20060227837A1
公开(公告)日：2006-10-12
申请号：US11285176
申请日：2005-11-23
申请人： Eun-kyung Lee , Byoung-Iyong Choi
发明人： Eun-kyung Lee , Byoung-Iyong Choi
IPC分类号： H01S5/00
CPC分类号： B82Y20/00 , H01S5/026 , H01S5/041 , H01S5/18 , H01S5/34
摘要： A quantum dot vertical capacity surface emitting laser (QD-VCSEL) and a method of manufacturing the same are provided. The QD-VCSEL includes a substrate, a lower distributed brag reflector (DBR) mirror formed on the substrate, an electron transport layer (ETL) formed on the lower DBR mirror, an emitting layer (EML) formed of nano-particle type group II-VI compound semiconductor quantum dots on the ETL, a hole transport layer (HTL) formed on the EML, and an upper DBR mirror formed on the HTL.
摘要翻译：提供量子点垂直容量表面发射激光器（QD-VCSEL）及其制造方法。 QD-VCSEL包括基板，形成在基板上的下分布式布拉格反射镜（DBR）反射镜，形成在下DBR反射镜上的电子传输层（ETL），由纳米颗粒型II组形成的发射层（EML） -VI化合物半导体量子点，在EML上形成的空穴传输层（HTL）和形成在HTL上的上DBR反射镜。

7. 发明申请

US20060212975A1 Nano wires and method of manufacturing the same 有权
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060212975A1
公开(公告)日：2006-09-21
申请号：US11369859
申请日：2006-03-08
申请人： Byoung-Iyong Choi , Eun-kyung Lee
发明人： Byoung-Iyong Choi , Eun-kyung Lee
IPC分类号： H01L51/40
CPC分类号： B82Y30/00 , C30B11/12 , C30B29/605 , Y10S977/721 , Y10S977/762 , Y10S977/768 , Y10S977/789 , Y10S977/81 , Y10S977/938
摘要： Provided are nano wires and a method of manufacturing the same. The method includes forming microgrooves having a plurality of microcavities, the microgrooves forming a regular pattern on a surface of a silicon substrate; forming a metal layer on the silicon substrate by depositing a material which acts as a catalyst to form nano wires on the silicon substrate; agglomerating the metal layer within the microgrooves on the surface of the silicon substrate by heating the metal layer to form catalysts; and growing the nano wires between the catalysts and the silicon substrate using a thermal process.
摘要翻译：提供纳米线及其制造方法。该方法包括形成具有多个微腔的微槽，微槽在硅衬底的表面上形成规则图案; 通过沉积作为催化剂的材料在硅衬底上形成纳米线，在硅衬底上形成金属层; 通过加热金属层以形成催化剂，将硅衬底表面上的微槽内的金属层凝集成形成催化剂; 并使用热处理在催化剂和硅衬底之间生长纳米线。

8. 发明申请

US20060269745A1 Nano wires and method of manufacturing the same 审中-公开
标题翻译：纳米线和制造方法相同
公开(公告)号：US20060269745A1
公开(公告)日：2006-11-30
申请号：US11362046
申请日：2006-02-27
申请人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
发明人： Eun-kyung Lee , Byoung-Iyong Choi , Sang-jun Choi , Hoon Kim
IPC分类号： D02G3/00
CPC分类号： H01L21/0273 , H01L21/26533 , H01L21/31654 , H01L21/76243 , H01L33/20 , Y10T428/2913
摘要： The present invention provides a method of manufacturing nano wires and nano wires having a p-n junction structure. The method includes: stacking a mask layer on a substrate; patterning the mask layer into stripes; and performing an oxygen ion injection process on the substrate and the mask layer to form oxygen ion injection regions in the substrate, thereby forming nano wire regions embedded in the substrate and separated from the substrate by the oxygen ion injection regions.
摘要翻译：本发明提供一种制造具有p-n结结构的纳米线和纳米线的方法。该方法包括：在基板上层叠掩模层; 将掩模层图案化成条纹; 在基板和掩模层上进行氧离子注入处理，在基板上形成氧离子注入区域，由此形成嵌入到基板内的纳米线区域，并通过氧离子注入区域与基板分离。

9. 发明申请

US20060182966A1 Silicon nano wire having a silicon-nitride shell and method of manufacturing the same 审中-公开
标题翻译：具有氮化硅壳的硅纳米线及其制造方法
公开(公告)号：US20060182966A1
公开(公告)日：2006-08-17
申请号：US11349250
申请日：2006-02-08
申请人： Eun-kyung Lee , Byoung-Iyong Choi
发明人： Eun-kyung Lee , Byoung-Iyong Choi
IPC分类号： D02G3/00
CPC分类号： C30B29/06 , B82Y30/00 , C30B11/12 , C30B25/00 , C30B29/60 , Y10T428/2933
摘要： Silicon nano wires having silicon nitride shells and a method of manufacturing the same are provided. Each silicon nano wire has a core portion formed of silicon, and a shell portion formed of silicon nitride surrounding the core portion. The method includes removing silicon oxide formed on the shell of the silicon nano wire and forming a silicon nitride shell.
摘要翻译：提供了具有氮化硅壳的硅纳米线及其制造方法。每个硅纳米线具有由硅形成的芯部分和由围绕芯部分的氮化硅形成的壳部分。该方法包括去除形成在硅纳米线的外壳上并形成氮化硅壳的氧化硅。

10. 发明授权

US07012239B2 Silicon optoelectronic device and image input/output device using the silicon optoelectronic device 有权
标题翻译：硅光电器件和图像输入/输出器件采用硅光电器件
公开(公告)号：US07012239B2
公开(公告)日：2006-03-14
申请号：US10716665
申请日：2003-11-20
申请人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
发明人： Jun-young Kim , Byoung-Iyong Choi , Eun-kyung Lee
IPC分类号： H01L31/00
CPC分类号： H01L31/125 , H01L31/173
摘要： A silicon optoelectronic device includes an optoelectronic device portion and a switching portion. The switching portion selectively controls the emission and detection of light by the optoelectronic device portion. The optoelectronic device portion includes: a doped region of the opposite type to an n- or p-type silicon-based substrate, in which emission and detection of light occurs due to quantum confinement effect at the p-n junction between the doped region and the substrate, and at least one semiconductor material region formed on the rear surface of the substrate, at least a portion of which forms a stack structure with the doped region so that a built-in transistor is formed. The silicon optoelectronic device allows selective light emission and detection without any external amplifying and switching circuits, easy control the duration of light emission and detection, and can be manufactured in a series of semiconductor fabrication process.
摘要翻译：硅光电子器件包括光电器件部分和开关部分。开关部分选择性地控制由光电子器件部分发出的光的发射和检测。光电子器件部分包括：与n型或p型硅基衬底相反类型的掺杂区域，其中由于在掺杂区域和衬底之间的pn结处的量子限制效应而发生光的发射和检测以及形成在所述衬底的后表面上的至少一个半导体材料区域，其至少一部分与所述掺杂区域形成堆叠结构，从而形成内置晶体管。硅光电子器件允许选择性发光和检测，而无需任何外部放大和开关电路，便于控制发光和检测的持续时间，并且可以在一系列半导体制造工艺中制造。

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