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1. 发明授权

US06193900B1 Method for sensing etch of distributed bragg reflector in real time 有权
标题翻译：用于实时感测分布式布拉格反射器的蚀刻的方法
公开(公告)号：US06193900B1
公开(公告)日：2001-02-27
申请号：US09143484
申请日：1998-08-28
申请人： Jong Hyeob Baek , Bun Lee
发明人： Jong Hyeob Baek , Bun Lee
IPC分类号： B24B4900
CPC分类号： G02B5/1857 , G02B2006/12104 , G02B2006/12176
摘要： A method for sensing the etch of distributed Bragg reflector (called DBR below) in a real time is provided. More particularly, a method for searching informations of etch speed and etch stop step by monitoring the etching procedure in the wet etching method which is a post-process in the semiconductor device manufacturing process. A laser beam is irradiated on the sample sunk in the etching solution during the etching process is on the way. Then, computer measures the intensity of laser beam reflected on the sample, analyzes the periodic signals occurred by its interference and obtains the etching speed of the sample in a real time. The laser provides thermal energy on the sample during wet etching and occurs irregular etching speed on a beam contacting part of sample and non contacting part. Uniform etching speed can be obtained in the entire sample using a convex lens having a suitable focal distance.
摘要翻译：提供了用于实时感测分布式布拉格反射器（以下称为DBR）的蚀刻的方法。更具体地，涉及一种用于通过在半导体器件制造过程中通过监视作为后处理的湿式蚀刻方法中的蚀刻步骤来搜索蚀刻速度和蚀刻停止步骤的信息的方法。在蚀刻过程中，激光束被照射在蚀刻溶液中沉没的样品上。然后，计算机测量样品反射的激光束的强度，分析其干涉产生的周期信号，实时获取样品的蚀刻速度。激光在湿蚀刻期间在样品上提供热能，并在样品和非接触部分的光束接触部分上发生不规则的蚀刻速度。使用具有合适焦距的凸透镜可以在整个样品中获得均匀的蚀刻速度。

2. 发明授权

US06410347B1 Real time epitaxial growth of vertical cavity surface-emitting laser using a reflectometry 失效
标题翻译：使用反射法实时垂直腔表面发射激光的外延生长
公开(公告)号：US06410347B1
公开(公告)日：2002-06-25
申请号：US09395032
申请日：1999-09-13
申请人： Jong Hyeob Baek , Bun Lee
发明人： Jong Hyeob Baek , Bun Lee
IPC分类号： H01L2120
CPC分类号： C30B25/16 , H01S5/0042 , H01S5/18361
摘要： The method of manufacturing VCSEL composed of multiple material layers uses a main measuring laser having same wavelength of that of VCSEL so as to estimate the growth periods required for growing a predetermined thickness of the material layers by analyzing the reflected signal of the main measuring laser and then control the growth time durations of subsequent material layers. This method eliminates the need of pre-knowledge of refractive indexes and the growing speeds of the material layers. Also, an interruptive process for measuring thickness, growth speed or refractive indexes can be omitted so as to perform the entire epitaxial growth in-situ and thus improve the reproducibility and the uniformity. In addition, a subsidiary measuring laser may be used other than the main measuring laser for improving the accuracy of the control of growth time duration, where the subsidiary measuring laser has a different wavelength from that of VCSEL. The subsidiary measuring laser may be used especially in the case of fabricating the VCSEL without any buffer layer.
摘要翻译：制造由多个材料层构成的VCSEL的方法使用具有与VCSEL相同波长的主测量激光器，以便通过分析主测量激光器的反射信号来估计生长预定厚度的材料层所需的生长周期，以及然后控制后续材料层的生长时间。该方法消除了对折射率的预先知识和材料层的生长速度的需要。此外，可以省略用于测量厚度，生长速度或折射率的中断过程，以便原位执行整个外延生长，从而提高再现性和均匀性。此外，除了主测量激光器之外，可以使用辅助测量激光器来提高生长时间的控制精度，其中辅助测量激光器具有与VCSEL不同的波长。辅助测量激光器可以特别用于制造没有任何缓冲层的VCSEL的情况。

3. 发明授权

US06181843B2 Optical switch of surface transmission type by one-dimensional array method 有权
标题翻译：表面透光型光开关采用一维阵列法
公开(公告)号：US06181843B2
公开(公告)日：2001-01-30
申请号：US09145512
申请日：1998-09-02
申请人： Bun Lee , Jong Hyeob Baek
发明人： Bun Lee , Jong Hyeob Baek
IPC分类号： G02B626
CPC分类号： H01S5/50 , H01S5/423
摘要： The present invention is related to a surface transmission-type optical switch of the 1-D array method, and more particularly to a surface transmission-type optical switch, which is manufactured by Fabry-perot type not to need optical waveguides and integrated only by amplifiers of the space division multiplex. A surface transmission-type optical switch according to the present invention is a structure to overlap 3 optical amplifiers for optical switching, and an incoming signal beam is amplified through the first optical amplifier and becomes an n×n amplifiers of a matrix type with the second signal amplification, passing through the second optical amplifier overlapped on the first amplifier. Amplified signal beams through 2 amplifiers perform n×n matrix switching through the third amplifier, and go out to the opposite side of the incoming surface. Characteristics of a surface-type Fabry perot type structure is that selective amplification is possible, by selecting only one wavelength in multiple wavelengths as the gain bandwidth is 5 nm or less.
摘要翻译：本发明涉及1-D阵列方法的表面透射型光开关，更具体地涉及一种由法布里 - 珀罗型制造的不需要光波导并仅由放大器的空分复用。根据本发明的表面透射型光开关是重叠3个用于光开关的光放大器的结构，并且输入信号光束通过第一光放大器被放大，并且成为具有第二信号放大的矩阵型的n×n放大器，通过重叠在第一放大器上的第二光放大器。通过2个放大器的放大信号光束通过第三放大器执行nxn矩阵切换，并且进出到入射面的相对侧。表面型法布里珀罗型结构的特征在于，通过选择只有一个波长的多个波长的增益带宽为5nm以下，可以进行选择性放大。

4. 发明申请

US20140000689A1 NITRIDE SEMICONDUCTOR-BASED SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：基于氮化物半导体的太阳能电池及其制造方法
公开(公告)号：US20140000689A1
公开(公告)日：2014-01-02
申请号：US14003899
申请日：2011-05-17
申请人： Dong Seon Lee , Si Young Bae , Do Hyung Kim , Jong Hyeob Baek , Seung-Jae Lee
发明人： Dong Seon Lee , Si Young Bae , Do Hyung Kim , Jong Hyeob Baek , Seung-Jae Lee
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/02363 , B82Y20/00 , H01L31/03044 , H01L31/035236 , H01L31/03529 , H01L31/075 , H01L31/1856 , Y02E10/544 , Y02E10/548
摘要： Disclosed herein are a nitride semiconductor-based solar cell including a photoactive layer having a wide area for incident light and a manufacturing method thereof. Opening parts are formed in a mask layer partially shielding a first n-type nitride semiconductor layer. The first n-type nitride semiconductor layer is exposed through the opening part, and second n-type nitride semiconductor layers are grown based on the exposed first n-type nitride semiconductor layer. The grown second n-type nitride semiconductor layer is buried in the opening part and is formed in a hexagonal pyramid shape. In addition, a photoactive layer and a p-type nitride semiconductor layer are sequentially formed along the second n-type nitride semiconductor layer. Therefore, a hole injection-electron pair is easily formed by the incident light. Further, an area of the photoactive layer is increased, such that photoelectric conversion efficiency is improved.
摘要翻译：本文公开了一种氮化物半导体基太阳能电池及其制造方法，该太阳能电池包括具有用于入射光的广泛面积的光活性层。开口部分形成在部分屏蔽第一n型氮化物半导体层的掩模层中。第一n型氮化物半导体层通过开口部露出，并且第二n型氮化物半导体层基于暴露的第一n型氮化物半导体层生长。生长的第二n型氮化物半导体层被埋在开口部分中并且形成为六角锥形。此外，沿着第二n型氮化物半导体层依次形成光活性层和p型氮化物半导体层。因此，入射光容易形成空穴注入 - 电子对。此外，光活性层的面积增加，光电转换效率提高。

5. 发明授权

US08847267B2 Light emitting diode with metal piles and multi-passivation layers and its manufacturing method 有权
标题翻译：具有金属堆和多层钝化层的发光二极管及其制造方法
公开(公告)号：US08847267B2
公开(公告)日：2014-09-30
申请号：US12672404
申请日：2008-08-07
申请人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
发明人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
IPC分类号： H01L33/00 , H01L33/38 , H01L33/46
CPC分类号： H01L33/385 , H01L33/46 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/49107 , H01L2924/00014 , H01L2933/0016 , H01L2224/05599
摘要： The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
摘要翻译：本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法，该方法包括：分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步，一个底物顺序！在台面蚀刻的上表面和侧面上形成反射层的第二步骤！第三步骤，通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤，通过一个或多个第一电极线将第一电极连接到第一焊盘，使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触，并将通过一个或多个第二电极线对第二焊盘的垂直延伸。作为本发明的效果，发光面积的损失减小，电流扩散效率提高。

6. 发明授权

US09171717B2 Method for manufacturing a group III nitride substrate using a chemical lift-off process 有权
标题翻译：使用化学剥离工艺制造III族氮化物衬底的方法
公开(公告)号：US09171717B2
公开(公告)日：2015-10-27
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L29/20 , H01L21/02 , H01L33/00 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

7. 发明申请

US20130193558A1 METHOD FOR MANUFACTURING A GROUP III NITRIDE SUBSTRATE USING A CHEMICAL LIFT-OFF PROCESS 有权
标题翻译：使用化学提升过程制造III类氮化物衬底的方法
公开(公告)号：US20130193558A1
公开(公告)日：2013-08-01
申请号：US13877082
申请日：2011-11-04
申请人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
发明人： Jin Woo Ju , Jong Hyeob Baek , Hyung Jo Park , Sang Hern Lee , Tak Jung , Ja Yeon Kim , Hwa Seop Oh , Tae Hoon Chung , Yoon Seok Kim , Dae Woo Jeon
IPC分类号： H01L21/02 , H01L29/04
CPC分类号： H01L21/02609 , H01L21/02381 , H01L21/02389 , H01L21/0242 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L21/02647 , H01L21/02664 , H01L29/045 , H01L33/0079
摘要： The non-polar or semi-polar group III nitride layer disclosed in a specific example of the present invention can be used for substrates for various electronic devices, wherein problems of conventional polar group III nitride substrates are mitigated or solved by using the nitride substrate of the invention, and further the nitride substrate can be manufactured by a chemical lift-off process.
摘要翻译：在本发明的具体实施例中公开的非极性或半极性III族氮化物层可以用于各种电子器件的基板，其中通过使用氮化物衬底的氮化物衬底来减轻或解决常规极性III族氮化物衬底的问题本发明，并且可以通过化学剥离工艺制造氮化物衬底。

8. 发明申请

US20110198635A1 Light Emitting Diode With Metal Piles and Multi-Passivation Layers and Its Manufacturing Method 有权
标题翻译：具有金属桩和多功能钝化层的发光二极管及其制造方法
公开(公告)号：US20110198635A1
公开(公告)日：2011-08-18
申请号：US12672404
申请日：2008-08-07
申请人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
发明人： Sang Mook Kim , Jong Hyeob Baek , Gang Ho Kim , Jung-In Kang , Hong Seo Yom , Young Moon Yu
IPC分类号： H01L33/60
CPC分类号： H01L33/385 , H01L33/46 , H01L2224/05568 , H01L2224/05573 , H01L2224/13 , H01L2224/49107 , H01L2924/00014 , H01L2933/0016 , H01L2224/05599
摘要： The present invention relates to a light emitting diode with metal piles and one or more passivation layers and a method for making the diode including a first steps of performing mesa etching respectively on a first semiconductor layer and a second semiconductor layer belonging to stacked layers formed on a substrate in sequence! a second step of forming a reflector layer on the mesa-etched upper and side face! a third step of contacting one or more first electrodes with the first semiconductor layer and one or more second electrodes through the reflector layer with the second semiconductor layer; a fourth step of forming a first passivation layer on the reflector layer and the contacted electrodes; and a fifth step of connecting the first electrodes to a first bonding pad through one or more first electrode lines, bring one ends of vertical extensions having the shape of a metal pile into contact with one or more second electrodes, and connecting the other ends of the vertical extensions to a second bonding pad through one or more second electrode lines. As effects of the present invention, the loss of light emitting area decreases and current diffusion efficiency increases.
摘要翻译：本发明涉及一种具有金属堆和一个或多个钝化层的发光二极管及其制造方法，该方法包括：分别在第一半导体层和第二半导体层上进行台面蚀刻的第一步，一个底物顺序！在台面蚀刻的上表面和侧面上形成反射层的第二步骤！第三步骤，通过具有第二半导体层的反射器层将一个或多个第一电极与第一半导体层和一个或多个第二电极接触; 在反射层和接触电极上形成第一钝化层的第四步骤; 以及第五步骤，通过一个或多个第一电极线将第一电极连接到第一焊盘，使具有金属堆的形状的垂直延伸部的一端与一个或多个第二电极接触，并将通过一个或多个第二电极线对第二焊盘的垂直延伸。作为本发明的效果，发光面积的损失减小，电流扩散效率提高。

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