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1. 发明申请

US20070004316A1 Integrated system for processing semiconductor wafers 审中-公开
标题翻译：用于处理半导体晶圆的集成系统
公开(公告)号：US20070004316A1
公开(公告)日：2007-01-04
申请号：US11452609
申请日：2006-06-13
申请人： Jalal Ashjaee , Boris Govzman , Bernard Frey , Boguslaw Nagorski , Douglas Young , Bulent Basol , Homayoun Talieh
发明人： Jalal Ashjaee , Boris Govzman , Bernard Frey , Boguslaw Nagorski , Douglas Young , Bulent Basol , Homayoun Talieh
IPC分类号： B24B51/00 , B24B7/00
CPC分类号： H01L21/67745 , B24B37/345 , G05B19/41865 , G05B2219/32272 , G05B2219/45031 , H01L21/67028 , H01L21/67034 , H01L21/67046 , H01L21/67051 , H01L21/67173 , H01L21/67219 , H01L21/68707 , H01L21/68728 , Y02P90/20
摘要： An integrated process tool for chemical mechanical processing, cleaning and drying a semiconductor workpiece is provided. The integrated process tool includes a CMP module and a cleaning and drying module. After being processed, the workpiece is transported from the CMP module to the cleaning and drying module using a movable housing. In the cleaning and drying module, a cleaning mechanism is used to clean the workpiece while the workpiece is rotated and held by a support stucture of the movable housing. A drying mechanism of the cleaning and drying module picks up the workpiece from the moveable housing and spin dries it. Throughout the CMP process, cleaning and drying, the processed surface of the wafer faces down.
摘要翻译：提供了用于化学机械加工，清洁和干燥半导体工件的集成工艺工具。集成工艺工具包括CMP模块和清洁和干燥模块。在处理之后，使用可动壳体将工件从CMP模块传送到清洁和干燥模块。在清洁和干燥模块中，使用清洁机构来清洁工件，同时工件被可移动壳体的支撑结构旋转并保持。清洁和干燥模块的干燥机构从可移动的壳体上拾取工件并使其干燥。在整个CMP过程中，清洁和干燥，晶片的经处理表面面朝下。

2. 发明申请

US20050133379A1 System for electropolishing and electrochemical mechanical polishing 有权
标题翻译：电抛光和电化学机械抛光系统
公开(公告)号：US20050133379A1
公开(公告)日：2005-06-23
申请号：US10822424
申请日：2004-04-12
申请人： Bulent Basol , Jalal Ashjaee , Boris Govzman , Homayoun Talieh , Bernard Frey
发明人： Bulent Basol , Jalal Ashjaee , Boris Govzman , Homayoun Talieh , Bernard Frey
IPC分类号： B24B37/04 , C25D5/02 , C25D5/06 , C25D5/22 , C25D7/12 , C25F7/00 , H01L21/00 , H01L21/288 , H01L21/321 , B23H9/00
CPC分类号： B24B37/046 , B24B37/20 , C25F7/00 , H01L21/2885 , H01L21/32115 , H01L21/32125 , H01L21/67075 , H01L21/6715
摘要： An apparatus for electropolishing a conductive layer on a wafer using a solution is disclosed. The apparatus comprises an electrode assembly immersed in the solution configured proximate to the conductive layer having a longitudinal dimension extending to at least a periphery of the wafer, the electrode assembly including an elongated contact electrode configured to receive a potential difference, an isolator adjacent the elongated contact electrode, and an elongated process electrode adjacent the isolator configured to receive the potential difference, a voltage supply is configured to supply the potential difference between the contact electrode and the process electrode to electropolish the conductive layer on the wafer.
摘要翻译：公开了一种使用溶液对晶片上的导电层进行电解抛光的装置。该装置包括浸入在靠近导电层配置的溶液中的电极组件，其具有延伸至晶片的至少周边的纵向尺寸，电极组件包括构造成接收电位差的细长接触电极，邻近细长的隔离器接触电极和邻近隔离器的细长工艺电极，其被配置为接收电位差，电压源被配置为提供接触电极和处理电极之间的电位差以对晶片上的导电层进行电解抛光。

3. 发明授权

US06855037B2 Method of sealing wafer backside for full-face electrochemical plating 失效
标题翻译：用于全面电化学电镀的晶片背面密封方法
公开(公告)号：US06855037B2
公开(公告)日：2005-02-15
申请号：US09910686
申请日：2001-07-20
申请人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
发明人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
IPC分类号： B24B37/30 , C25D7/12 , C25D17/06 , H01L21/00 , H01L21/683 , B24B1/00
CPC分类号： B24B37/30 , C25D17/001 , C25D17/06 , H01L21/6704 , H01L21/6715 , H01L21/6838
摘要： The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.
摘要翻译：本发明提供了一种晶片载体，其包括沿着晶片载体的周边设置的开口，其在一个实施例中是多个孔。通过孔发射到晶片的外围后缘上的气体有助于防止由此产生的处理液体和污染物到达晶片的底部和内侧区域的内部区域。在另一个实施例中，使用多个同心密封构件来证明更好的密封，并且外部密封件优选地是独立地可移动的，以允许当晶片仍然附接到晶片载体时清洁晶片的周边背面而发生。

4. 发明申请

US20050079713A1 Edge and bevel cleaning process and system 有权
标题翻译：边缘和斜面清洁过程和系统
公开(公告)号：US20050079713A1
公开(公告)日：2005-04-14
申请号：US10920028
申请日：2004-08-16
申请人： Jalal Ashjaee , Rimma Volodarsky , Cyprian Uzoh , Bulent Basol , Homayoun Talieh
发明人： Jalal Ashjaee , Rimma Volodarsky , Cyprian Uzoh , Bulent Basol , Homayoun Talieh
IPC分类号： H01L21/00 , H01L21/288 , H01L21/3213 , H01L21/302 , H01L21/461
CPC分类号： H01L21/6708 , H01L21/2885 , H01L21/32134
摘要： The present invention provides at least one nozzle that sprays a rotating workpiece with an etchant at an edge thereof. The at least one nozzle is located in an upper chamber of a vertically configured processing subsystem that also includes mechanisms for plating, cleaning and drying in upper and lower chambers
摘要翻译：本发明提供了至少一个喷嘴，其在其边缘处用蚀刻剂喷射旋转的工件。所述至少一个喷嘴位于垂直构造的处理子系统的上腔室中，所述处理子系统还包括用于在上腔室和下室中进行电镀，清洁和干燥的机构

5. 发明申请

US20050034994A1 Method and apparatus for full surface electrotreating of a wafer 有权
公开(公告)号：US20050034994A1
公开(公告)日：2005-02-17
申请号：US10947628
申请日：2004-09-21
申请人： Jalal Ashjaee , Boguslaw Nagorski , Bulent Basol , Homayoun Talieh , Cyprian Uzoh
发明人： Jalal Ashjaee , Boguslaw Nagorski , Bulent Basol , Homayoun Talieh , Cyprian Uzoh
IPC分类号： C25D7/12 , C25F7/00 , C25D5/00 , B23H3/00
CPC分类号： C25F7/00 , C25D7/123 , C25D17/001 , H01L21/2885
摘要： Deposition of conductive material on or removal of conductive material from a workpiece frontal side of a semiconductor workpiece is performed by providing an anode having an anode area which is to face the workpiece frontal side, and electrically connecting the workpiece frontal side with at least one electrical contact, outside of the anode area, by pushing the electrical contact and the workpiece frontal side into proximity with each other. A potential is applied between the anode and the electrical contact, and the workpiece is moved with respect to the anode and the electrical contact. Full-face electroplating or electropolishing over the workpiece frontal side surface, in its entirety, is thus permitted.

6. 发明授权

US06988932B2 Apparatus of sealing wafer backside for full-face processing 失效
标题翻译：密封晶片背面进行全面处理的设备
公开(公告)号：US06988932B2
公开(公告)日：2006-01-24
申请号：US10788926
申请日：2004-02-25
申请人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
发明人： Jalal Ashjaee , Homayoun Talieh , Bulent Basol , Konstantin Volodarsky
IPC分类号： B24B1/00
CPC分类号： B24B37/30 , C25D17/001 , C25D17/06 , H01L21/6704 , H01L21/6715 , H01L21/6838
摘要： The present invention provides a wafer carrier that includes an opening, which in one embodiment is a plurality of holes, disposed along the periphery of the wafer carrier. A gas emitted through the holes onto a peripheral back edge of the wafer assists in preventing the processing liquids and contaminants resulting therefrom from reaching the inner region of the base and the backside inner region of the wafer. In another embodiment, a plurality of concentric sealing members are used to prove a better seal, and the outer seal is preferably independently movable to allow cleaning of a peripheral backside of the wafer to occur while the wafer is still attached to the wafer carrier.
摘要翻译：本发明提供了一种晶片载体，其包括沿着晶片载体的周边设置的开口，其在一个实施例中是多个孔。通过孔发射到晶片的外围后缘上的气体有助于防止由此产生的处理液体和污染物到达晶片的底部和内侧区域的内部区域。在另一个实施例中，使用多个同心密封构件来证明更好的密封，并且外部密封件优选地是独立地可移动的，以允许当晶片仍然附接到晶片载体时清洁晶片的周边背面而发生。

7. 发明申请

US20050118932A1 Adjustable gap chemical mechanical polishing method and apparatus 审中-公开
标题翻译：可调间隙化学机械抛光方法和装置
公开(公告)号：US20050118932A1
公开(公告)日：2005-06-02
申请号：US10886105
申请日：2004-07-06
申请人： Homayoun Talieh , Jalal Ashjaee , Bulent Basol
发明人： Homayoun Talieh , Jalal Ashjaee , Bulent Basol
IPC分类号： B24B37/04 , B24B49/16 , B24B1/00
CPC分类号： B24B37/30 , B24B49/16
摘要： A polishing apparatus for polishing a surface of wafer is provided. The apparatus includes a carrier to hold the workpiece. An array of fluid nozzles are placed across from the surface of the wafer to provide a gap between the nozzles and the surface of the workpiece. A polishing pad positioned within the gap and configured to polish the surface of the workpiece when a fluid is applied from the plurality of nozzles to push the polishing pad to the surface.
摘要翻译：提供了用于抛光晶片表面的抛光装置。该装置包括用于保持工件的载体。流体喷嘴阵列从晶片的表面横跨放置，以在喷嘴和工件的表面之间提供间隙。抛光垫，其定位在所述间隙内并且构造成当从所述多个喷嘴施加流体以将所述抛光垫推向所述表面时抛光所述工件的表面。

8. 发明授权

US07572354B2 Electrochemical processing of conductive surface 有权
标题翻译：导电表面的电化学处理
公开(公告)号：US07572354B2
公开(公告)日：2009-08-11
申请号：US11445594
申请日：2006-06-01
申请人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
发明人： Cyprian Emeka Uzoh , Homayoun Talieh , Bulent Basol , Douglas W. Young
IPC分类号： C25B9/00 , C25D7/00
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

9. 发明申请

US20060219573A1 Apparatus with conductive pad for electroprocessing 有权
标题翻译：具有电加工导电垫的装置
公开(公告)号：US20060219573A1
公开(公告)日：2006-10-05
申请号：US11445594
申请日：2006-06-01
申请人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
发明人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol , Douglas Young
IPC分类号： B23H3/00
CPC分类号： B24B37/20 , B24B37/046 , B24B37/24 , B24B37/26 , C25D5/06 , C25D17/001 , C25D17/14 , C25F7/00 , H01L21/2885 , H01L21/76877
摘要： The present invention relates to methods and apparatus for plating a conductive material on a semiconductor substrate by rotating pad or blade type objects in close proximity to the substrate, thereby eliminating/reducing dishing and voids. This is achieved by providing pad or blade type objects mounted on cylindrical anodes or rollers and applying the conductive material to the substrate using the electrolyte solution disposed on or through the pads, or on the blades. In one embodiment of the invention, the pad or blade type objects are mounted on the cylindrical anodes and rotated about a first axis while the workpiece may be stationary or rotate about a second axis, and metal from the electrolyte solution is deposited on the workpiece when a potential difference is applied between the workpiece and the anode. In another embodiment of the present invention, the plating apparatus includes an anode plate spaced apart from the cathode workpiece. Upon application of power to the anode plate and the cathode workpiece, the electrolyte solution disposed in the plating apparatus is used to deposit the conductive material on the workpiece surface using cylindrical rollers having the pad or blade type objects.
摘要翻译：本发明涉及通过旋转靠近基板的垫片或刀片型物体来在半导体衬底上镀覆导电材料的方法和装置，从而消除/减少凹陷和空隙。这通过提供安装在圆柱形阳极或辊子上的垫片或刀片型物体，并使用设置在垫片上或穿过垫片上的电解质溶液将导电材料施加到衬底来实现。在本发明的一个实施例中，衬垫或刀片型物体安装在圆柱形阳极上并围绕第一轴线旋转，同时工件可以是静止的或围绕第二轴线旋转，并且来自电解质溶液的金属沉积在工件上，在工件和阳极之间施加电位差。在本发明的另一实施例中，电镀装置包括与阴极工件间隔开的阳极板。在向阳极板和阴极工件施加电力时，使用设置在电镀装置中的电解液将导电材料沉积在工件表面上，使用具有焊盘或刀片型物体的圆柱形辊。

10. 发明申请

US20060070885A1 Chip interconnect and packaging deposition methods and structures 审中-公开
公开(公告)号：US20060070885A1
公开(公告)日：2006-04-06
申请号：US11295014
申请日：2005-12-06
申请人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol
发明人： Cyprian Uzoh , Homayoun Talieh , Bulent Basol
IPC分类号： C25D5/02 , C25D5/48
CPC分类号： C25D5/00 , C23C18/1608 , C23C18/165 , C23C18/1651 , C23C18/1653 , C23C18/1696 , C23C18/1848 , C23C18/31 , C25D5/02 , C25D5/10 , C25D5/22 , C25D5/34 , H01L21/2885 , H01L21/7684 , H01L21/76843 , H01L21/76855 , H01L21/76865 , H01L21/76871 , H01L21/76874 , H01L21/76876 , H01L21/76879 , H01L21/76885 , H01L24/11 , H01L2221/1089 , H01L2224/13099 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01016 , H01L2924/01019 , H01L2924/01021 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01041 , H01L2924/01042 , H01L2924/01044 , H01L2924/01045 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/01057 , H01L2924/0106 , H01L2924/01072 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01087 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/14 , H01L2924/3011
摘要： The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

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