专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06849524B2 Semiconductor wafer protection and cleaning for device separation using laser ablation 有权
标题翻译：半导体晶片保护和清洁用于使用激光烧蚀的器件分离
公开(公告)号：US06849524B2
公开(公告)日：2005-02-01
申请号：US10137904
申请日：2002-05-02
申请人： Bryan S. Shelton , Mark Gottfried , Stephen Schwed , Ivan Eliashevich
发明人： Bryan S. Shelton , Mark Gottfried , Stephen Schwed , Ivan Eliashevich
IPC分类号： B23K26/073 , B23K26/40 , H01L21/301 , H01L21/302 , H01L21/304 , H01L21/46 , H01L21/78 , H01L33/00
CPC分类号： B23K26/0738 , B23K26/066 , B23K26/364 , B23K26/40 , B23K2101/40 , B23K2103/50 , H01L21/3043 , H01L21/6836 , H01L21/78 , H01L33/0095 , H01L2221/68327 , H01L2221/6834 , H01L2924/0002 , Y10S438/94 , H01L2924/00
摘要： A method of protecting and cleaning a semiconductor wafer using laser ablation includes the following steps: applies a protective coating on the side to be cut of a wafer with sapphire substrate, mounts the other side of the sapphire wafer on an adhesive tape, mounts the sapphire wafer on a cutting table, cuts the sapphire wafer with a laser, breaks the sapphire wafer into die, and cleans the sapphire wafer with a cleaning solution that removes slag resulting from the cutting, debris resulting from the breaking, and the protective coating, but the adhesive tape, the cleaning solution, and the protective coating are selected such that the cleaning solution does not damage the adhesive tape.
摘要翻译：使用激光烧蚀保护和清洁半导体晶片的方法包括以下步骤：在具有蓝宝石衬底的晶片切割侧上施加保护涂层，将蓝宝石晶片的另一侧安装在胶带上，安装蓝宝石在切割台上的晶片，用激光切割蓝宝石晶片，将蓝宝石晶片切割成模具，并用清洁溶液清洁蓝宝石晶片，该清洁溶液除去切割产生的渣，断裂产生的碎屑和保护涂层，但是选择粘合带，清洁溶液和保护涂层，使得清洁溶液不会损坏胶带。

2. 发明授权

US06420252B1 Methods of forming robust metal contacts on compound semiconductors 有权
标题翻译：在化合物半导体上形成坚固的金属接触的方法
公开(公告)号：US06420252B1
公开(公告)日：2002-07-16
申请号：US09568065
申请日：2000-05-10
申请人： Stephen Schwed , Louis A. Koszi , Edward W. Douglas , Michael G. Brown
发明人： Stephen Schwed , Louis A. Koszi , Edward W. Douglas , Michael G. Brown
IPC分类号： H01L2144
CPC分类号： H01L21/76852 , H01L21/0272 , H01L21/31144 , H01L21/76841 , H01L21/76897
摘要： A method of forming a self-aligned contact on a semiconductor includes forming a layer of a dielectric material over a semiconductor, providing a photoresist layer over the dielectric layer and then exposing the photoresist layer with a desired pattern and developing an opening in the photoresist layer. The dielectric material exposed through the photoresist layer opening is then removed to form a contact opening extending through the dielectric material to the semiconductor. The photoresist layer is then eroded so as to enlarge the size of the opening in the photoresist layer, whereby the dielectric material adjacent the contact opening is exposed through the enlarged opening of the photoresist layer. A barrier metal is then deposited in the enlarged opening of the photoresist layer and in the contact opening of the dielectric material, whereby the barrier metal overlies the exposed portion of the dielectric material. A conductive metal is then deposited atop the barrier metal. The barrier metal isolates the contact metal from the semiconductor, thereby preventing interaction or intermixing of the contact metal and the semiconductor.
摘要翻译：在半导体上形成自对准接触的方法包括在半导体上形成介电材料层，在介电层上提供光致抗蚀剂层，然后以期望的图案曝光光致抗蚀剂层，并在光刻胶层中显影出一个开口。然后去除通过光致抗蚀剂层开口暴露的电介质材料以形成延伸穿过介电材料到半导体的接触开口。然后蚀刻光致抗蚀剂层以扩大光致抗蚀剂层中的开口的尺寸，由此邻近接触开口的电介质材料通过光致抗蚀剂层的扩大的开口暴露。然后在光致抗蚀剂层的扩大开口中和介电材料的接触开口中沉积阻挡金属，由此阻挡金属覆盖在电介质材料的暴露部分上。然后在阻挡金属顶上沉积导电金属。阻挡金属将接触金属与半导体隔离，从而防止接触金属和半导体的相互作用或混合。

3. 发明授权

US08022495B2 PIN diode structure with zinc diffusion region 失效
标题翻译： PIN二极管结构与锌扩散区
公开(公告)号：US08022495B2
公开(公告)日：2011-09-20
申请号：US12420213
申请日：2009-04-08
申请人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
发明人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
IPC分类号： H01L31/06
CPC分类号： H01L31/105
摘要： A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, and a first type window layer disposed over the intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer is disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
摘要翻译： PIN光电二极管，其具有基板，设置在基板上的第一类型电极层，设置在第一类型电极层的一部分上的第一本征材料层，以及设置在本征层上的第一类型窗口层。本征材料的岛状区域设置在窗口层上方，并且电介质层设置在岛状区域和至少所述岛状区域的周边部分上，从而在岛状区域中形成开口。掺杂剂通过开口扩散，以便形成延伸到本征材料的第一层中的PN结。

4. 发明申请

US20060060933A1 PIN diode structure with zinc diffusion region 失效
公开(公告)号：US20060060933A1
公开(公告)日：2006-03-23
申请号：US11230959
申请日：2005-09-19
申请人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
发明人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
IPC分类号： H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.

5. 发明授权

US07538403B2 PIN diode structure with zinc diffusion region 失效
标题翻译： PIN二极管结构与锌扩散区
公开(公告)号：US07538403B2
公开(公告)日：2009-05-26
申请号：US11230959
申请日：2005-09-19
申请人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
发明人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
IPC分类号： H01L27/15
CPC分类号： H01L31/105
摘要： A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
摘要翻译：具有衬底的PIN光电二极管，设置在衬底上的第一类型电极层，设置在第一类型电极层的一部分上的第一本征材料层，设置在所述本征层上的第一类型窗口层。本征材料的岛状区域设置在窗口层上方，并且设置在岛状区域和至少所述岛状区域的周边部分上的电介质层，从而在岛状区域中形成开口。掺杂剂通过开口扩散，以便形成延伸到本征材料的第一层中的PN结。

6. 发明申请

US20090230497A1 Pin Diode Structure with Zinc Diffusion Region 失效
标题翻译：锌二极管结构与锌扩散区域
公开(公告)号：US20090230497A1
公开(公告)日：2009-09-17
申请号：US12420213
申请日：2009-04-08
申请人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
发明人： Xiang Gao , Alex Ceruzzi , Linlin Liu , Stephen Schwed
IPC分类号： H01L31/105
CPC分类号： H01L31/105
摘要： A PIN photodiode having a substrate, a first type electrode layer disposed on the substrate, a first layer of intrinsic material disposed over a portion of the first-type electrode layer, a first type window layer disposed over said intrinsic layer. An island shaped region of intrinsic material is disposed over the window layer and a dielectric layer disposed over the island region and at least the peripheral portion of said island shaped region whereby an opening is formed in the island shaped region. A dopant is diffused through the opening so as to form a PN junction that extends into the first layer of intrinsic material.
摘要翻译：具有衬底的PIN光电二极管，设置在衬底上的第一类型电极层，设置在第一类型电极层的一部分上的第一本征材料层，设置在所述本征层上的第一类型窗口层。本征材料的岛状区域设置在窗口层上方，并且设置在岛状区域和至少所述岛状区域的周边部分上的电介质层，从而在岛状区域中形成开口。掺杂剂通过开口扩散，以便形成延伸到本征材料的第一层中的PN结。

7. 发明授权

US06580139B1 Monolithically integrated sensing device and method of manufacture 失效
标题翻译：单片集成感测装置及其制造方法
公开(公告)号：US06580139B1
公开(公告)日：2003-06-17
申请号：US09664187
申请日：2000-09-18
申请人： Stephen Schwed , Edward W. Douglas , Christopher Palmer
发明人： Stephen Schwed , Edward W. Douglas , Christopher Palmer
IPC分类号： H01L2976
CPC分类号： H01L29/66318
摘要： A monolithically integrated, compound semiconductor sensing device and a method of making the device is provided. The device includes an signal conditioning circuit formed on a substrate surface. A sensor including one or more compound semiconductors is deposited on a second portion of the substrate surface. The signal conditioning circuit has a well formed therein for exposing the substrate surface and the sensor is deposited within the well.
摘要翻译：提供了单片集成化合物半导体感测装置和制造该装置的方法。该器件包括形成在衬底表面上的信号调理电路。包含一个或多个化合物半导体的传感器沉积在衬底表面的第二部分上。信号调节电路在其中良好地形成用于暴露衬底表面，并且传感器沉积在阱内。

8. 发明授权

US06579741B2 Monolithically integrated sensing device and method of manufacture 失效
标题翻译：单片集成感测装置及其制造方法
公开(公告)号：US06579741B2
公开(公告)日：2003-06-17
申请号：US10243107
申请日：2002-09-13
申请人： Stephen Schwed , Edward W. Douglas , Christopher Palmer
发明人： Stephen Schwed , Edward W. Douglas , Christopher Palmer
IPC分类号： H01L2100
CPC分类号： H01L29/66318
摘要： A method of manufacturing a monolithic compound semiconductor sensing device includes epitaxially depositing a signal conditioning epitaxy on a substrate surface, providing a well in the signal conditioning circuit and exposing the substrate surface, and epitaxially depositing a sensor within the well.
摘要翻译：制造单片化合物半导体感测装置的方法包括在衬底表面上外延沉积信号调理外延，在信号调理电路中提供阱并暴露衬底表面，以及在阱内外延沉积传感器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式