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1. 发明申请

US20060102895A1 Precursor compositions for forming tantalum-containing films, and tantalum-containing barrier films and copper-metallized semiconductor device structures 审中-公开
标题翻译：用于形成含钽膜的前体组合物，含钽隔离膜和铜金属化半导体器件结构
公开(公告)号：US20060102895A1
公开(公告)日：2006-05-18
申请号：US11273959
申请日：2005-11-15
申请人： Bryan Hendrix , Jeffrey Roeder , Thomas Baum , Tianniu Chen , Chongying Xu , Gregory Stauf
发明人： Bryan Hendrix , Jeffrey Roeder , Thomas Baum , Tianniu Chen , Chongying Xu , Gregory Stauf
IPC分类号： H01L29/08 , C07F9/00 , C07F17/00 , H01L21/469
CPC分类号： H01L21/28556 , C07F9/00 , C07F9/005 , C07F17/00 , C23C16/18 , C23C16/34 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compositions of Formulae I-V hereof are disclosed, having utility as precursors for forming tantalum-containing films. The tantalum compositions are amenable to usage involving chemical vapor deposition and atomic layer deposition processes, to form semiconductor device structures, including a dielectric layer, a barrier layer overlying the dielectric layer, and copper metallization overlying the barrier layer, wherein the barrier layer includes a Ta-containing layer including sufficient carbon so that the Ta-containing layer is amorphous. In one preferred implementation, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including a Ta alkylidene compound, at a temperature below 400° C., in a reducing or inert atmosphere.
摘要翻译：公开了式I-V的钽组合物，其用作形成含钽膜的前体。钽组合物适用于涉及化学气相沉积和原子层沉积工艺的用途，以形成半导体器件结构，包括电介质层，覆盖电介质层的阻挡层和覆盖在阻挡层上的铜金属化物，其中阻挡层包括含有Ta的层包含足够的碳，使得含Ta层是无定形的。在一个优选实施方案中，半导体器件结构通过在还原或惰性气氛中在低于400℃的温度下从含有Ta亚烷基化合物的前体经CVD或ALD沉积含Ta阻挡层来制造。

2. 发明申请

US20050080286A1 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译：包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
公开(公告)号：US20050080286A1
公开(公告)日：2005-04-14
申请号：US10870106
申请日：2004-06-17
申请人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas Baum
发明人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas Baum
IPC分类号： C07F7/10 , C07F7/02
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

3. 发明申请

US20100314590A1 COMPOSITION AND METHOD FOR LOW TEMPERATURE CHEMICAL VAPOR DEPOSITION OF SILICON-CONTAINING FILMS INCLUDING SILICON CARBONITRIDE AND SILICON OXYCARBONITRIDE FILMS 有权
标题翻译：含有碳化硅和硅氧化碳膜的含硅薄膜的低温化学气相沉积的组合物和方法
公开(公告)号：US20100314590A1
公开(公告)日：2010-12-16
申请号：US12862739
申请日：2010-08-24
申请人： Ziyun WANG , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun WANG , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： H01B3/18 , C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

4. 发明授权

US07601860B2 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译：包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
公开(公告)号：US07601860B2
公开(公告)日：2009-10-13
申请号：US10870106
申请日：2004-06-17
申请人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan Hendrix , Jeffrey Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

5. 发明申请

US20060013943A1 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 有权
标题翻译：用于沉积含钽膜的钽酰胺配合物及其制备方法
公开(公告)号：US20060013943A1
公开(公告)日：2006-01-19
申请号：US11224588
申请日：2005-09-12
申请人： Tianniu Chen , Chongying Xu , Thomas Baum
发明人： Tianniu Chen , Chongying Xu , Thomas Baum
IPC分类号： C23C16/00 , B05D5/12
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.
摘要翻译：钽前体可用于通过诸如化学气相沉积和原子层沉积的方法在衬底上沉积氮化钽或钽氧化物材料。这些前体可用于在具有铜金属化和/或铁电薄膜的微电子器件结构上形成钽基扩散阻挡层。

6. 发明申请

US20050079290A1 Tantalum amide complexes for depositing tantalum-containing films, and method of making same 有权
公开(公告)号：US20050079290A1
公开(公告)日：2005-04-14
申请号：US10684545
申请日：2003-10-14
申请人： Tianniu Chen , ChongYing Xu , Thomas Baum
发明人： Tianniu Chen , ChongYing Xu , Thomas Baum
IPC分类号： C07F9/00 , C23C16/34 , C23C16/40 , C23C16/22
CPC分类号： C23C16/45553 , C07F9/005 , C23C16/18 , C23C16/34 , C23C16/40 , C23C16/405 , C23C16/45525 , H01L21/28556 , Y10T29/49117
摘要： Tantalum precursors useful in depositing tantalum nitride or tantalum oxides materials on substrates, by processes such as chemical vapor deposition and atomic layer deposition. The precursors are useful in forming tantalum-based diffusion barrier layers on microelectronic device structures featuring copper metallization and/or ferroelectric thin films.

7. 发明授权

US08802882B2 Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride films 有权
标题翻译：包含碳氮化硅和碳氮氧化硅薄膜的含硅膜的低温化学气相沉积的组成和方法
公开(公告)号：US08802882B2
公开(公告)日：2014-08-12
申请号：US12862739
申请日：2010-08-24
申请人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
发明人： Ziyun Wang , Chongying Xu , Bryan C. Hendrix , Jeffrey F. Roeder , Tianniu Chen , Thomas H. Baum
IPC分类号： C07F7/10
CPC分类号： C07F7/10 , H01L21/02271
摘要： Silicon precursors for forming silicon-containing films in the manufacture of semiconductor devices, such as films including silicon carbonitride, silicon oxycarbonitride, and silicon nitride (Si3N4), and a method of depositing the silicon precursors on substrates using low temperature (e.g.,
摘要翻译：在制造半导体器件（例如包括碳氮化硅，碳氮化硅和氮化硅（Si 3 N 4）的薄膜）的制造中的硅前体，以及使用低温（例如，550℃）将硅前体沉积在衬底上的方法 ℃）化学气相沉积工艺，用于制造ULSI器件和器件结构。

8. 发明授权

US08168811B2 Precursors for CVD/ALD of metal-containing films 失效
标题翻译：含金属膜CVD / ALD的前体
公开(公告)号：US08168811B2
公开(公告)日：2012-05-01
申请号：US12507048
申请日：2009-07-21
申请人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
发明人： Thomas M. Cameron , Chongying Xu , Tianniu Chen
IPC分类号： C07F9/00 , C07F15/00 , C07F5/06
CPC分类号： C07C225/14 , C07F7/003
摘要： Precursors useful for vapor phase deposition processes, e.g., CVD/ALD, to form metal-containing films on substrates. The precursors include, in one class, a central metal atom M to which is coordinated at least one ligand of formula (I): wherein: R1, R2 and R3 are each independently H or ogano moieties; and G1 is an electron donor arm substituent that increases the coordination of the ligand to the central metal atom M; wherein when G1 is aminoalkyl, the substituents on the amino nitrogen are not alkyl, fluoroalkyl, cycloaliphatic, or aryl, and are not connected to form a ring structure containing carbon, oxygen or nitrogen atoms. Also disclosed are ketoester, malonate and other precursors adapted for forming metal-containing films on substrates, suitable for use in the manufacture of microelectronic device products such as semiconductor devices and flat panel displays.
摘要翻译：用于气相沉积工艺（例如CVD / ALD）以在基底上形成含金属膜的前体。前体在一类中包括配位至少一种式（I）配位体的中心金属原子M：其中：R 1，R 2和R 3各自独立地为H或无规部分; 并且G1是增加配体与中心金属原子M的配位的电子给体臂取代基; 其中当G1是氨基烷基时，氨基氮上的取代基不是烷基，氟烷基，脂环族或芳基，并且不连接形成含有碳，氧或氮原子的环结构。还公开了适用于在诸如半导体器件和平板显示器的微电子器件产品的制造中用于在基底上形成含金属膜的酮酯，丙二酸酯和其它前体。

9. 发明授权

US07858816B2 Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films 有权
公开(公告)号：US07858816B2
公开(公告)日：2010-12-28
申请号：US12790835
申请日：2010-05-30
申请人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F9/00
CPC分类号： C23C16/18 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.

10. 发明申请

US20100240918A1 TANTALUM AMIDO-COMPLEXES WITH CHELATE LIGANDS USEFUL FOR CVD AND ALD OF TaN AND Ta205 THIN FILMS 有权
标题翻译：具有适用于TaN和Ta205薄膜的CVD和ALD的CHATEAL配体的TANTALUM AMIDO复合物
公开(公告)号：US20100240918A1
公开(公告)日：2010-09-23
申请号：US12790835
申请日：2010-05-30
申请人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
发明人： Tianniu Chen , Chongying Xu , Jeffrey F. Roeder , Thomas H. Baum
IPC分类号： C07F9/00
CPC分类号： C23C16/18 , C23C16/34 , H01L21/28556 , H01L21/28562 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Tantalum compounds of Formula I hereof are disclosed, having utility as precursors for forming tantalum-containing films such as barrier layers. The tantalum compounds of Formula I may be deposited by CVD or ALD for forming semiconductor device structures including a dielectric layer, a barrier layer on the dielectric layer, and a copper metallization on the barrier layer, wherein the barrier layer includes a Ta-containing layer and sufficient carbon so that the Ta-containing layer is amorphous. According to one embodiment, the semiconductor device structure is fabricated by depositing the Ta-containing barrier layer, via CVD or ALD, from a precursor including the tantalum compound of Formula I hereof at a temperature below about 400° C. in a reducing or inert atmosphere, e.g., a gas or plasma optionally containing a reducing agent.
摘要翻译：公开了式I的钽化合物，其用作形成含钽膜如阻挡层的前体。可以通过CVD或ALD沉积式I的钽化合物以形成包括电介质层，电介质层上的阻挡层和阻挡层上的铜金属化的半导体器件结构，其中阻挡层包括含Ta层和足够的碳，使得含Ta层是无定形的。根据一个实施例，半导体器件结构通过CVD或ALD从包含式I的钽化合物的前体在低于约400℃的还原或惰性的沉积中制备气氛，例如任选地含有还原剂的气体或等离子体。

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