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    • 7. 发明授权
    • Process for manufacturing integrated semiconductor devices comprising a chemoresistive gas microsensor
    • 用于制造包括化学耐药性微量传感器的集成半导体器件的方法
    • US06326229B1
    • 2001-12-04
    • US09405893
    • 1999-09-24
    • Ubaldo MastromatteoBenedetto Vigna
    • Ubaldo MastromatteoBenedetto Vigna
    • H01L2100
    • G01N27/12
    • To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.
    • 为了制造包括化学耐化学气体微传感器的集成半导体器件,首先形成半导体材料体,在半导体材料体上依次形成与金属连接同时形成的金属材料的牺牲区域, 用于传感器的区域,与牺牲区电气和物理分离的加热器元件和气体敏感元件,与加热器元件电和物理分离; 开口相对于加热器元件和气体敏感元件横向形成,气体敏感元件延伸到牺牲区域并且在制造过程结束时除去牺牲区域。
    • 9. 发明授权
    • Fabrication process for microstructure protection systems related to hard disk reading unit
    • 与硬盘读取单元相关的微结构保护系统的制造工艺
    • US06391741B1
    • 2002-05-21
    • US09616227
    • 2000-07-14
    • Ubaldo MastromatteoSarah ZerbiniSimone SassoliniBenedetto Vigna
    • Ubaldo MastromatteoSarah ZerbiniSimone SassoliniBenedetto Vigna
    • H01L2176
    • G11B5/56B81C1/00896H01L2224/48091H01L2224/48472H01L2224/73204H01L2924/10253H01L2924/00014H01L2924/00
    • A process for assembling a microactuator on a R/W transducer that includes forming a first wafer of semiconductor material having a plurality of microactuators including suspended regions and fixed regions separated from each other by first trenches; forming a second wafer of semiconductor material comprising blocking regions connecting mobile and fixed intermediate regions separated from each other by second trenches; bonding the two wafers so as to form a composite wafer wherein the suspended regions of the first wafer are connected to the mobile intermediate regions of the second wafer, and the fixed regions of the first wafer are connected to the fixed intermediate regions of the second wafer; cutting the composite wafer into a plurality of units; fixing the mobile intermediate region of each unit to a respective R/W transducer; and removing the blocking regions. The blocking regions are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.
    • 一种在R / W换能器上组装微致动器的方法,包括形成具有多个微致动器的半导体材料的第一晶片,所述多个微致动器包括通过第一沟槽彼此分离的悬置区域和固定区域; 形成第二半导体材料晶片,其包括通过第二沟槽彼此分开的连接移动和固定中间区域的阻挡区域; 键合两个晶片以形成复合晶片,其中第一晶片的悬置区域连接到第二晶片的移动中间区域,并且第一晶片的固定区域连接到第二晶片的固定中间区域 ; 将复合晶片切割成多个单元; 将每个单元的移动中间区域固定到相应的R / W换能器; 并去除阻挡区域。 阻挡区域由氧化硅制成,中间区域由多晶硅制成。