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    • 1. 发明申请
    • ELECTRON EMITTER ASSEMBLY AND METHOD FOR GENERATING ELECTRON BEAMS
    • 电子发射器组件和用于产生电子束的方法
    • US20060098782A1
    • 2006-05-11
    • US10904280
    • 2004-11-02
    • Bruce DunhamJohn PriceColin Wilson
    • Bruce DunhamJohn PriceColin Wilson
    • H01J35/22H01J35/00H01J35/32
    • H01J35/065A61B6/032A61B6/4028H01J2235/064
    • An electron emitter assembly and a method for generating an electron beam are provided. The electron emitter assembly includes a laser configured to emit a first light beam and a second light beam. The electron emitter assembly further includes a mirror configured to move to a first operational position to reflect the first light beam toward a first region of a photo-cathode. The mirror is further configured to move to a second operational position to reflect the second light beam toward a second region of the photo-cathode. The photo-cathode is configured to emit a first electron beam when the first light beam contacts the first region and to emit a second electron beam when the second light beam contacts the second region. The electron emitter assembly further includes an anode configured to receive the first and second electron beams from the photo-cathode.
    • 提供了一种电子发射器组件和一种用于产生电子束的方法。 电子发射器组件包括被配置为发射第一光束和第二光束的激光器。 电子发射器组件还包括被配置为移动到第一操作位置以将第一光束朝向光阴极的第一区域反射的反射镜。 反射镜还被配置成移动到第二操作位置以将第二光束反射到光 - 阴极的第二区域。 当第二光束接触第二区域时,光阴极被配置为当第一光束接触第一区域时发射第一电子束并发射第二电子束。 电子发射器组件还包括被配置为从光阴极接收第一和第二电子束的阳极。
    • 4. 发明申请
    • ELECTRON EMITTER ASSEMBLY AND METHOD FOR ADJUSTING A POWER LEVEL OF ELECTRON BEAMS
    • 电子发射器组件和调整电子束功率电平的方法
    • US20060098783A1
    • 2006-05-11
    • US10904284
    • 2004-11-02
    • Bruce DunhamJohn PriceColin Wilson
    • Bruce DunhamJohn PriceColin Wilson
    • H01J35/22H01J35/00H01J35/32
    • H01J35/065H01J35/24H01J2235/062H01J2235/068H01J2235/087
    • An electron emitter assembly and a method for adjusting a power level of an electron beam are provided. The electron emitter assembly includes a laser configured to emit a first light beam. The electron emitter assembly further includes a light-attenuating device configured to receive the first light beam and to attenuate the first light beam between a first light intensity and a second light intensity greater than the first light intensity. The electron emitter assembly further includes a photo-cathode configured to receive the first light beam from the light-attenuating device. The photo-cathode is further configured to emit a first electron beam having a first power level in response to receiving the first light beam having the first light intensity. The photo-cathode is further configured to emit a second electron beam having a second power level greater than the first power level in response to receiving the first light beam having the second light intensity. The electron emitter assembly further includes an anode configured to receive the first and second electrons beams from the photo-cathode.
    • 提供了一种用于调节电子束功率电平的电子发射器组件和方法。 电子发射器组件包括被配置为发射第一光束的激光器。 电子发射器组件还包括被配置为接收第一光束并且在第一光强度和大于第一光强度的第二光强度之间衰减第一光束的光衰减器件。 电子发射器组件还包括被配置为从光衰减装置接收第一光束的光阴极。 光阴极还被配置为响应于接收到具有第一光强度的第一光束而发射具有第一功率电平的第一电子束。 响应于接收到具有第二光强度的第一光束,光阴极还被配置为发射具有大于第一功率电平的第二功率电平的第二电子束。 电子发射器组件还包括被配置为从光阴极接收第一和第二电子束的阳极。
    • 10. 发明授权
    • Robust field emitter array design
    • 鲁棒的场发射极阵列设计
    • US06750470B1
    • 2004-06-15
    • US10248030
    • 2002-12-12
    • Colin Wilson
    • Colin Wilson
    • H01L2906
    • H01J9/025H01J1/3044
    • There is provided a field emitter device formed over a semiconductor substrate. The field emitter device includes at least one field emitter tip disposed over the substrate, and a conducting gate electrode layer disposed over the substrate. The field emitter device also includes a protective electronic component disposed over and integral to the substrate and electrically connecting the conducting gate electrode layer to the substrate such that if the conducting gate electrode layer experiences a voltage greater than a breakdown voltage of the field emitter device, the protective electronic component conducts current between the conducting gate electrode layer and the substrate.
    • 提供了形成在半导体衬底上的场发射器件。 场发射器件包括设置在衬底上的至少一个场发射器尖端,以及设置在衬底上的导电栅电极层。 场致发射器件还包括设置在衬底上并与衬底一体并且将导电栅电极层电连接到衬底的保护电子部件,使得如果导电栅极电极层经受大于场发射器件的击穿电压的电压, 保护电子部件在导电栅电极层和基板之间导通电流。