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    • 3. 发明授权
    • Electrical generator for waterway
    • 水路发电机
    • US08534057B1
    • 2013-09-17
    • US12841481
    • 2010-07-22
    • Brian Brown
    • Brian Brown
    • F03B9/00
    • F03B17/068Y02E10/28Y02P70/527
    • An apparatus for generating electricity from a flowing stream of water is disclosed. A rigid frame is fixed with a pair of wheels, or with two linkages in circuit around two pairs of wheels. A plurality of blades are fixed between the wheel or linkages at their side edges, a cross-sectional area of each blade being substantially comparable to the cross-sectional area of the stream of water. An orientating mechanism is adapted to maintain the orientation of each blade such that rotation of the wheels or linkages results in an opposite rotation of each blade to maintain the orientation of the blade. As such, each blade “stabs” orthogonally into and out of the flow of water edge first, minimizing the displacement and disruption of the water upon entering. Each wheel or linkage, when mechanically coupled with a generator, results in the production of electricity.
    • 公开了一种从流动的水发电的装置。 刚性框架用一对轮子固定,或者在两对车轮周围有两个连杆。 多个叶片在其侧边缘处固定在轮或连杆之间,每个叶片的横截面积基本上与水流的横截面面积相当。 定向机构适于保持每个叶片的取向,使得轮子或链节的旋转导致每个叶片的相反旋转以保持叶片的取向。 这样,每个叶片首先“垂直”进入和流出水边缘,最大限度地减少进入时水的位移和破坏。 当与发电机机械耦合时,每个车轮或联动器导致电力的产生。
    • 4. 发明授权
    • Method for monitoring edge exclusion during chemical mechanical planarization
    • 在化学机械平面化过程中监测边缘排除的方法
    • US07428470B2
    • 2008-09-23
    • US11676320
    • 2007-02-19
    • Brian BrownPaul Franzen
    • Brian BrownPaul Franzen
    • G01B11/02
    • B24B37/042B24B49/04
    • A method is provided for measuring edge exclusion on a workpiece that includes a wafer having a film disposed thereon. The method is performed by a CMP system employing a platen and a thickness sensor coupled to the platen and positioned to repeatedly travel a path over the edge of the film during polishing. The method comprises measuring the thickness of the workpiece during selected iterations of the probe path, and establishing from the wafer thickness measurements the length of time the probe is over the film (ton) during the selected iterations. Edge exclusion is determined for at least one iteration utilizing a function related to ton.
    • 提供了一种用于测量包括其上设置有薄膜的晶片的工件上的边缘排除的方法。 该方法由采用压板和厚度传感器的CMP系统执行,该传感器耦合到压板并定位成在抛光期间重复地移动超过膜边缘的路径。 该方法包括在选择的探测路径的迭代期间测量工件的厚度,以及在所选择的迭代期间,从晶片厚度测量建立探针在膜上的时间长度(t)。 使用与相关的功能的至少一次迭代确定边缘排除。