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1. 发明授权

US09059319B2 Embedded dynamic random access memory device and method 有权
标题翻译：嵌入式动态随机存取存储器件及方法
公开(公告)号：US09059319B2
公开(公告)日：2015-06-16
申请号：US12692760
申请日：2010-01-25
申请人： Brent A. Anderson , John E. Barth, Jr. , Herbert L. Ho , Edward J. Nowak , Wayne Trickle
发明人： Brent A. Anderson , John E. Barth, Jr. , Herbert L. Ho , Edward J. Nowak , Wayne Trickle
IPC分类号： H01L27/108 , H01L21/84 , H01L29/66
CPC分类号： H01L21/84 , H01L27/1087 , H01L27/10894 , H01L29/66181
摘要： Embodiments of the invention provide an integrated circuit for an embedded dynamic random access memory (eDRAM), a semiconductor-on-insulator (SOI) wafer in which such an integrated circuit may be formed, and a method of forming an eDRAM in such an SOI wafer. One embodiment of the invention provides an integrated circuit for an embedded dynamic random access memory (eDRAM) comprising: a semiconductor-on-insulator (SOI) wafer including: an n-type substrate; an insulator layer atop the n-type substrate; and an active semiconductor layer atop the insulator layer; a plurality of deep trenches, each extending from a surface of the active semiconductor layer into the n-type substrate; a dielectric liner along a surface of each of the plurality of deep trenches; and an n-type conductor within each of the plurality of deep trenches, the dielectric liner separating the n-type conductor from the n-type substrate; wherein the n-type substrate, the dielectric liner, and the n-type conductor form a buried plate, a node dielectric, and a node plate, respectively, of a cell capacitor.
摘要翻译：本发明的实施例提供了一种用于嵌入式动态随机存取存储器（eDRAM），其中可形成这种集成电路的绝缘体上半导体（SOI）晶片的集成电路，以及在这种SOI中形成eDRAM的方法晶圆。本发明的一个实施例提供了一种用于嵌入式动态随机存取存储器（eDRAM）的集成电路，包括：绝缘体上半导体（SOI）晶片，其包括：n型衬底; 位于n型衬底顶部的绝缘体层; 和位于绝缘体层顶部的有源半导体层; 多个深沟槽，各自从有源半导体层的表面延伸到n型衬底中; 沿着所述多个深沟槽中的每一个的表面的电介质衬垫; 以及在所述多个深沟槽的每一个内的n型导体，所述电介质衬垫将所述n型导体与所述n型衬底分离; 其中所述n型衬底，所述电介质衬垫和所述n型导体分别形成电池电容器的掩埋板，节点电介质和节点板。

2. 发明申请

US20110180862A1 EMBEDDED DYNAMIC RANDOM ACCESS MEMORY DEVICE AND METHOD 有权
标题翻译：嵌入式动态随机访问存储器件和方法
公开(公告)号：US20110180862A1
公开(公告)日：2011-07-28
申请号：US12692760
申请日：2010-01-25
申请人： Brent A. Anderson , John E. Barth, JR. , Herbert L. Ho , Edward J. Nowak , Wayne Trickle
发明人： Brent A. Anderson , John E. Barth, JR. , Herbert L. Ho , Edward J. Nowak , Wayne Trickle
IPC分类号： H01L27/12 , H01L27/108 , H01L21/8242
CPC分类号： H01L21/84 , H01L27/1087 , H01L27/10894 , H01L29/66181
摘要： Embodiments of the invention provide an integrated circuit for an embedded dynamic random access memory (eDRAM), a semiconductor-on-insulator (SOI) wafer in which such an integrated circuit may be formed, and a method of forming an eDRAM in such an SOI wafer. One embodiment of the invention provides an integrated circuit for an embedded dynamic random access memory (eDRAM) comprising: a semiconductor-on-insulator (SOI) wafer including: an n-type substrate; an insulator layer atop the n-type substrate; and an active semiconductor layer atop the insulator layer; a plurality of deep trenches, each extending from a surface of the active semiconductor layer into the n-type substrate; a dielectric liner along a surface of each of the plurality of deep trenches; and an n-type conductor within each of the plurality of deep trenches, the dielectric liner separating the n-type conductor from the n-type substrate; wherein the n-type substrate, the dielectric liner, and the n-type conductor form a buried plate, a node dielectric, and a node plate, respectively, of a cell capacitor.
摘要翻译：本发明的实施例提供了一种用于嵌入式动态随机存取存储器（eDRAM），其中可形成这种集成电路的绝缘体上半导体（SOI）晶片的集成电路，以及在这种SOI中形成eDRAM的方法晶圆。本发明的一个实施例提供了一种用于嵌入式动态随机存取存储器（eDRAM）的集成电路，包括：绝缘体上半导体（SOI）晶片，其包括：n型衬底; 位于n型衬底顶部的绝缘体层; 和位于绝缘体层顶部的有源半导体层; 多个深沟槽，各自从有源半导体层的表面延伸到n型衬底中; 沿着所述多个深沟槽中的每一个的表面的电介质衬垫; 以及在所述多个深沟槽的每一个内的n型导体，所述电介质衬垫将所述n型导体与所述n型衬底分离; 其中所述n型衬底，所述电介质衬垫和所述n型导体分别形成电池电容器的掩埋板，节点电介质和节点板。

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