专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07485892B2 Optical broadband emitters and methods of making the same 失效
标题翻译：光纤宽带发射器及其制作方法
公开(公告)号：US07485892B2
公开(公告)日：2009-02-03
申请号：US11322814
申请日：2005-12-29
申请人： Boon-Siew Ooi , Hery Susanto Djie , Yan Zhou , Scott A. Meyer
发明人： Boon-Siew Ooi , Hery Susanto Djie , Yan Zhou , Scott A. Meyer
IPC分类号： H01L29/06
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/0602 , H01S5/22 , H01S5/34313 , H01S5/4031 , H01S5/50 , H01S2301/02 , H01S2301/04
摘要： An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiO2 layer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiO2 intermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.
摘要翻译：描述了光学宽带发射器和制造这种宽带发射器的方法。使用诸如溶胶 - 凝胶衍生的SiO 2层之类的诸如凝胶状电介质层的纳米压印，将多个量子阱，特别是载流子隧道耦合量子阱的混合描述为多个阶梯或分级部分，以形成不同厚度的混合盖区域。进行热退火处理以冷凝SiO 2混合盖并引起混合。描述了一种超发光二极管，其具有沉积在不同带隙的多个部分上的多个电极，其中每个单独的电极可以被正向或反向偏置到不同的程度，使得每个二极管部分可以单独地用作子带自发发射极，放大器/衰减器光子吸收器，透明波导或光电检测器/光功率监视器。

2. 发明申请

US20080310470A1 Broadband semiconductor laser 审中-公开
标题翻译：宽带半导体激光器
公开(公告)号：US20080310470A1
公开(公告)日：2008-12-18
申请号：US11820061
申请日：2007-06-18
申请人： Boon-Siew Ooi , Hery Susanto Djie
发明人： Boon-Siew Ooi , Hery Susanto Djie
IPC分类号： H01S5/00 , H01L21/00
CPC分类号： H01S5/341 , B82Y20/00 , H01S5/1032 , H01S5/125 , H01S5/141 , H01S5/162 , H01S5/22 , H01S5/3412 , H01S5/3413 , H01S5/3414 , H01S5/4043 , H01S5/4068 , H01S5/4087
摘要： A broadband laser having a first cladding layer, a second cladding layer. A semiconductor structure between the first and second cladding layers has a layer of inhomogeneous quantum nano heterostructures. The inhomogeneous quantum nano heterostructures are engineered to lase at a ground state and at an excited state.
摘要翻译：一种具有第一包层，第二包层的宽带激光器。第一和第二包层之间的半导体结构具有不均匀的量子纳米异质结构层。非均匀量子纳米异质结构被设计为在基态和激发态下发光。

3. 发明申请

US20070152225A1 Optical broadband emitters and methods of making the same 失效
标题翻译：光纤宽带发射器及其制作方法
公开(公告)号：US20070152225A1
公开(公告)日：2007-07-05
申请号：US11322814
申请日：2005-12-29
申请人： Boon-Siew Ooi , Hery Djie , Yan Zhou , Scott Meyer
发明人： Boon-Siew Ooi , Hery Djie , Yan Zhou , Scott Meyer
IPC分类号： H01L29/15
CPC分类号： H01L33/0045 , B82Y20/00 , H01S5/026 , H01S5/0425 , H01S5/0602 , H01S5/22 , H01S5/34313 , H01S5/4031 , H01S5/50 , H01S2301/02 , H01S2301/04
摘要： An optical broadband emitter and the method of making such a broadband emitter are described. Intermixing of closely coupled multiple quantum wells, especially carrier tunneled coupled quantum wells, is described using nano-imprinting of a gel like dielectric layer such as a sol-gel derived SiO2 layer into multiple stepped or graded sections to form intermixing cap regions of different thickness. A thermal annealing process is performed to condense the SiO2 intermixing cap and induce intermixing. A superluminescent diode is described having multiple electrodes deposited over multiple sections of different bandgaps in which each individual electrode can be either forward or reverse biased to different degrees such that each diode section can individually function as a sub-band spontaneous emitter, an amplifier/attenuator, a photon-absorber, a transparent waveguide, or a photodetector/optical power monitor.
摘要翻译：描述了光学宽带发射器和制造这种宽带发射器的方法。使用诸如溶胶 - 凝胶衍生的SiO 2层之类的凝胶状电介质层将多个步进或分级部分的纳米压印描述为紧密耦合的多个量子阱，特别是载流子隧道耦合量子阱的混合以形成不同厚度的混合盖区域。进行热退火处理以冷凝SiO 2混合盖并引发混合。描述了一种超发光二极管，其具有沉积在不同带隙的多个部分上的多个电极，其中每个单独的电极可以被正向或反向偏置到不同的程度，使得每个二极管部分可以单独地用作子带自发发射极，放大器/衰减器光子吸收器，透明波导或光电检测器/光功率监视器。

4. 发明授权

US06984538B2 Method for quantum well intermixing using pre-annealing enhanced defects diffusion 失效
标题翻译：使用预退火增强缺陷扩散的量子阱互混方法
公开(公告)号：US06984538B2
公开(公告)日：2006-01-10
申请号：US10726384
申请日：2003-12-03
申请人： Boon-Siew Ooi , Ruiyu Wang
发明人： Boon-Siew Ooi , Ruiyu Wang
IPC分类号： H01L21/00 , H01L21/324
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes upper and lower barrier layers with quantum well layers therebetween. The quantum well structure is then pre-annealed at a temperature and time that does not induce quantum well intermixing, but does diffuse the point defects closer to the quantum well layer. Finally, the structure is thermally annealed at a higher temperature to induce quantum well intermixing (QWI) in the quantum well structure, which shifts the bandgap energy of the quantum well layer.
摘要翻译：用于移动量子阱层（例如，III-V半导体量子阱层）的带隙能量而不引起复杂晶体缺陷或产生显着的自由载流子的方法。该方法包括在升高的温度（例如约200℃至约700℃）的范围内将离子引入量子阱结构。其中引入离子的量子阱结构包括上和下势垒层其间具有量子阱层。然后量子阱结构在不会引起量子阱混合的温度和时间下进行预退火，但是将点缺陷扩散到更接近量子阱层。最后，该结构在较高温度下进行热退火，以引发量子阱结构中的量子阱混合（QWI），从而使量子阱层的带隙能量发生偏移。

5. 发明授权

US06878562B2 Method for shifting the bandgap energy of a quantum well layer 失效
标题翻译：移动量子阱层带隙能量的方法
公开(公告)号：US06878562B2
公开(公告)日：2005-04-12
申请号：US09916701
申请日：2001-07-26
申请人： Boon-Siew Ooi , Seng-Tiong Ho
发明人： Boon-Siew Ooi , Seng-Tiong Ho
IPC分类号： H01L21/18 , H01S5/026 , H01S5/34 , H01L21/00 , H01L21/265
CPC分类号： B82Y20/00 , H01L21/182 , H01S5/026 , H01S5/0261 , H01S5/0265 , H01S5/3413 , H01S5/3414
摘要： A process for shifting the bandgap energy of a quantum well layer (e.g., a III-V semiconductor quantum well layer) without inducing complex crystal defects or generating significant free carriers. The process includes introducing ions (e.g., deep-level ion species) into a quantum well structure at an elevated temperature, for example, in the range of from about 200° C. to about 700° C. The quantum well structure that has had ions introduced therein includes an upper barrier layer, a lower barrier layer and a quantum well layer. The quantum well layer is disposed between the upper barrier layer and the lower barrier layer. The quantum well structure is then thermally annealed, thereby inducing quantum well intermixing (QWI) in the quantum well structure and shifting the bandgap energy of the quantum well layer. Also, a photonic device assembly that includes a plurality of operably coupled photonic devices monolithically integrated on a single substrate using the process described above.
摘要翻译：用于移动量子阱层（例如，III-V半导体量子阱层）的带隙能量而不引起复杂晶体缺陷或产生显着的自由载流子的方法。该方法包括在升高的温度例如约200℃至约700℃的范围内将离子（例如，深层离子物质）引入量子阱结构中。已经存在的量子阱结构在其中引入的离子包括上阻挡层，下势垒层和量子阱层。量子阱层设置在上阻挡层和下阻挡层之间。然后量子阱结构被热退火，从而在量子阱结构中引起量子阱混合（QWI）并且移动量子阱层的带隙能量。此外，光子器件组件包括使用上述方法将单个集成在单个衬底上的多个可操作耦合的光子器件组合在一起。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式