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1. 发明授权

US06504207B1 Method to create EEPROM memory structures integrated with high performance logic and NVRAM, and operating conditions for the same 失效
标题翻译：创建集成了高性能逻辑和NVRAM的EEPROM存储器结构的方法，以及与之相同的操作条件
公开(公告)号：US06504207B1
公开(公告)日：2003-01-07
申请号：US09609292
申请日：2000-06-30
申请人： Bomy A. Chen , Jay G. Harrington , Kevin M. Houlihan , Dennis Hoyniak , Chung Hon Lam , Hyun Koo Lee , Rebecca D. Mih , Jed H. Rankin
发明人： Bomy A. Chen , Jay G. Harrington , Kevin M. Houlihan , Dennis Hoyniak , Chung Hon Lam , Hyun Koo Lee , Rebecca D. Mih , Jed H. Rankin
IPC分类号： H01L2976
CPC分类号： H01L21/28273 , G11C16/0408 , H01L29/42328
摘要： A method and structure for a EEPROM memory device integrated with high performance logic or NVRAM. The EEPROM device includes a floating gate and program gate self-aligned with one another. During programming, electron tunneling occurs between the floating gate and the program gate.
摘要翻译：与高性能逻辑或NVRAM集成的EEPROM存储器件的方法和结构。 EEPROM器件包括浮置栅极和彼此自对准的程序栅极。在编程期间，在浮栅和程序门之间发生电子隧穿。

2. 发明授权

US06271565B1 Asymmetrical field effect transistor 失效
标题翻译：非对称场效应晶体管
公开(公告)号：US06271565B1
公开(公告)日：2001-08-07
申请号：US09516544
申请日：2000-03-01
申请人： Terence B. Hook , Dennis Hoyniak , Edward J. Nowak
发明人： Terence B. Hook , Dennis Hoyniak , Edward J. Nowak
IPC分类号： H01L31119
CPC分类号： H01L29/66659 , H01L21/26586 , H01L29/1083 , H01L29/6659 , H01L29/7835
摘要： A method of producing an asymmetrical semiconductor device with ion implantation techniques and semiconductor devices constructed according to this method in which a barrier of ion absorbing material of height h is positioned beside a structure on a semiconductor surface. The barrier is located at a maximum distance d from one side of the structure, and an angled ion implant is directed at the side of the structure. The maximum distance d of the barrier from the side of the structure is equal to the height of the barrier h divided by the tangent of the angle of the ion implant so that the side of the structure is shadowed from the ion implant. A second ion implant is directed to the opposite side of the structure on the semiconductor surface, thereby forming a desired implant and producing the asymmetrical semiconductor device.
摘要翻译：使用离子注入技术制造不对称半导体器件的方法和根据该方法构造的半导体器件，其中高度为h的离子吸收材料的势垒位于半导体表面上的结构旁边。屏障位于结构一侧的最大距离d处，并且成角度的离子注入物指向结构侧。阻挡层从结构侧面的最大距离d等于隔离层h的高度除以离子注入角度的切线，使得结构的一侧被离子注入物遮蔽。第二离子注入被引导到半导体表面上的结构的相对侧，从而形成期望的注入并产生非对称半导体器件。

3. 发明授权

US06797592B2 Method for forming a retrograde implant 有权
标题翻译：形成逆行植入物的方法
公开(公告)号：US06797592B2
公开(公告)日：2004-09-28
申请号：US10421969
申请日：2003-04-23
申请人： Jeffrey S. Brown , Bryant C. Colwill , Terence B. Hook , Dennis Hoyniak
发明人： Jeffrey S. Brown , Bryant C. Colwill , Terence B. Hook , Dennis Hoyniak
IPC分类号： H01L21265
CPC分类号： H01L21/823878 , H01L21/2652 , H01L21/266 , H01L21/823481 , H01L21/823493 , H01L21/823892
摘要： A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.
摘要翻译：提供了离子注入的方法。该方法包括：提供衬底; 在所述基板上形成具有侧壁的掩模图像; 在衬底和掩蔽图像上形成阻挡层; 以及通过所述阻挡层进行逆向离子注入到所述衬底中，其中所述阻挡层基本上阻挡在所述掩蔽层的侧壁处散射的离子。

4. 发明授权

US06610585B1 Method for forming a retrograde implant 失效
公开(公告)号：US06610585B1
公开(公告)日：2003-08-26
申请号：US10083062
申请日：2002-02-26
申请人： Jeffrey S. Brown , Bryant C. Colwill , Terence B. Hook , Dennis Hoyniak
发明人： Jeffrey S. Brown , Bryant C. Colwill , Terence B. Hook , Dennis Hoyniak
IPC分类号： H01L21265
CPC分类号： H01L21/823878 , H01L21/2652 , H01L21/266 , H01L21/823481 , H01L21/823493 , H01L21/823892
摘要： A method of ion implantation is provided. The method comprising: providing a substrate; forming a masking image having a sidewall on the substrate; forming a blocking layer on the substrate and on the masking image; and performing a retrograde ion implant through the blocking layer into the substrate, wherein the blocking layer substantially blocks ions scattered at the sidewall of the masking layer.

5. 发明授权

US6083794A Method to perform selective drain engineering with a non-critical mask 失效
标题翻译：用非关键掩模进行选择性排水工程的方法
公开(公告)号：US6083794A
公开(公告)日：2000-07-04
申请号：US889991
申请日：1997-07-10
申请人： Terence B. Hook , Dennis Hoyniak , Edward J. Nowak
发明人： Terence B. Hook , Dennis Hoyniak , Edward J. Nowak
IPC分类号： H01L21/265 , H01L21/336 , H01L29/10 , H01L29/78
CPC分类号： H01L29/66659 , H01L21/26586 , H01L29/1083 , H01L29/7835 , H01L29/6659
摘要： A method of producing an asymmetrical semiconductor device with ion implantation techniques and semiconductor devices constructed according to this method in which a barrier of ion absorbing material of height h is positioned beside a structure on a semiconductor surface. The barrier is located at a maximum distance d from one side of the structure, and an angled ion implant is directed at the side of the structure. The maximum distance d of the barrier from the side of the structure is equal to the height of the barrier h divided by the tangent of the angle of the ion implant so that the side of the structure is shadowed from the ion implant. A second ion implant is directed to the opposite side of the structure on the semiconductor surface, thereby forming a desired implant and producing the asymmetrical semiconductor device.
摘要翻译：使用离子注入技术制造不对称半导体器件的方法和根据该方法构造的半导体器件，其中高度为h的离子吸收材料的势垒位于半导体表面上的结构旁边。屏障位于结构一侧的最大距离d处，并且成角度的离子注入物指向结构侧。阻挡层从结构侧面的最大距离d等于隔离层h的高度除以离子注入角度的切线，使得结构的一侧被离子注入物遮蔽。第二离子注入被引导到半导体表面上的结构的相对侧，从而形成期望的注入并产生非对称半导体器件。

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