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    • 8. 发明授权
    • Array substrate and manufacturing method thereof and display apparatus
    • 阵列基板及其制造方法和显示装置
    • US09524991B2
    • 2016-12-20
    • US14422343
    • 2014-06-30
    • BOE TECHNOLOGY GROUP CO., LTD.
    • Wenqing XuHui TianXiaowei Xu
    • H01L27/12H01L27/32H01L29/786
    • H01L27/1255H01L27/1222H01L27/1274H01L27/3265H01L29/78675
    • An array substrate and a manufacturing method thereof, and a display apparatus comprising the array substrate are provided. The array substrate comprises a base substrate, and a thin film transistor and a storing capacitor provided on the base substrate, the thin film transistor comprises a gate, a source, a drain and a gate insulation layer provided between the source and drain and the gate, the storing capacitor comprises a first plate, a second plate and a dielectric layer provided between the first plate and the second plate, wherein, both of the first plate and the second plate are formed of metal material, and the dielectric layer is formed of the same material as the gate insulation layer. In the array substrate of the present invention, the charging speed of the storing capacitor can be improved and the display quality of the display apparatus comprising the array substrate is further improved.
    • 提供阵列基板及其制造方法以及包括阵列基板的显示装置。 阵列基板包括基底基板和设置在基底基板上的薄膜晶体管和存储电容器,薄膜晶体管包括设置在源极和漏极与栅极之间的栅极,源极,漏极和栅极绝缘层 存储电容器包括设置在第一板和第二板之间的第一板,第二板和介电层,其中,第一板和第二板都由金属材料形成,并且介电层由 与栅极绝缘层相同的材料。 在本发明的阵列基板中,可以提高存储电容器的充电速度,并且进一步提高包括阵列基板的显示装置的显示质量。